ST2100GXH22A
Abstract: TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200
Text: TOSHIBA ST2100GXH22A TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST2100GXH22A HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS (Ta=25degC) ITEMs
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ST2100GXH22A
25degC)
ST2100GXH22A
TOSHIBA IEGT
nikkei S-200
TOSHIBA IEGT 4500V
ST1500GXH22
1000GXHH25
IEGT 4500V
TOSHIBA SILICON N-CHANNEL IEGT
IEGT
nikkei S200
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nikkei S-200
Abstract: TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH
Text: TOSHIBA ST1500GXH22 TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST1500GXH22 HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS (Ta=25degC) ITEMs
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ST1500GXH22
25degC)
10ms-Halransportation
nikkei S-200
TOSHIBA IEGT
IEGT 4500V
ST1500GXH22
TOSHIBA IEGT 4500V
IEGT
nikkei S200
IEGT 4500V 1500A
ST1500GXH22 IEGT
ST1500GXH
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IEGT 4500V
Abstract: TOSHIBA SILICON N-CHANNEL IEGT TOSHIBA IEGT TOSHIBA IEGT 4500V 1000GXHH25 S6X06 IEGT tf75 IEGT toshiba
Text: TOSHIBA S6X06 TOSHIBA SILICON N-CHANNEL IEGT S6X06 <TENTATIVE SPEC.> HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APLICATIONS ● High Input Impedance. ● Enhancement Mode. EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS Ta=25℃ CHARACTERISTICS Collector-Emitter Voltage
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S6X06
IEGT 4500V
TOSHIBA SILICON N-CHANNEL IEGT
TOSHIBA IEGT
TOSHIBA IEGT 4500V
1000GXHH25
S6X06
IEGT
tf75
IEGT toshiba
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IEGT 4500V
Abstract: IEGT trench static characteristics of mosfet and igbt mitsubishi igbt cm
Text: Characteristics of a 1200V CSTBT Optimized for Industrial Applications Yoshifumi Tomomatsu*, Shigeru Kusunoki*, Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Hideo Iwamoto*, Eric R. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan
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IEGT 4500V
Abstract: n mosfet depletion 600V IEGT IGBT 4500V mitsubishi igbt cm
Text: The CSTBT, a New 1200V Power Chip with Low VCE sat and Robust Short Circuit Withstanding Eric Motto*, John F. Donlon*, Yoshifumi Tomomatsu*, Shigeru Kusunoki* Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, Hideo Iwamoto* * Fukuryo Semicon Engineering Corporation, Fukuoka, Japan
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IEGT 4500V
Abstract: depletion p mosfet IGBT CHIP 1700V IEGT PCIM eric motto NITTA
Text: A 1700V LPT-CSTBT With Low Loss and High Durability Eric Motto*, John Donlon*, Tsutomu Nakagawa*, Youichi Ishimura*, Katsumi Satoh*, Junji Yamada*, Masanori Yamamoto* Shigeru Kusunoki*, Hideki Nakamura*, Katsumi Nakamura* *Powerex Incorporated, Youngwood, PA USA
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