IEGT 2100
Abstract: Ansaldo SPA IEGT ARF681
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS
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ARF681
IEGT 2100
Ansaldo SPA
IEGT
ARF681
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IEGT
Abstract: ARF694
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF694
IEGT
ARF694
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ST2100GXH22A
Abstract: TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200
Text: TOSHIBA ST2100GXH22A TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST2100GXH22A HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS (Ta=25degC) ITEMs
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ST2100GXH22A
25degC)
ST2100GXH22A
TOSHIBA IEGT
nikkei S-200
TOSHIBA IEGT 4500V
ST1500GXH22
1000GXHH25
IEGT 4500V
TOSHIBA SILICON N-CHANNEL IEGT
IEGT
nikkei S200
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nikkei S-200
Abstract: TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH
Text: TOSHIBA ST1500GXH22 TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST1500GXH22 HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS (Ta=25degC) ITEMs
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ST1500GXH22
25degC)
10ms-Halransportation
nikkei S-200
TOSHIBA IEGT
IEGT 4500V
ST1500GXH22
TOSHIBA IEGT 4500V
IEGT
nikkei S200
IEGT 4500V 1500A
ST1500GXH22 IEGT
ST1500GXH
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IEGT 2100
Abstract: IEGT ARF672 Ansaldo SPA
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF672
IEGT 2100
IEGT
ARF672
Ansaldo SPA
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IEGT
Abstract: ARF670 1370a
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF670
IEGT
ARF670
1370a
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IEGT
Abstract: ARF695
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF695
IEGT
ARF695
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diode data 140
Abstract: IEGT ARF771LT
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF771LT
diode data 140
IEGT
ARF771LT
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IEGT
Abstract: ARF794LT
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF794LT
IEGT
ARF794LT
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IEGT
Abstract: ARF694 igbt 3 KA C645A
Text: POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - Fax + 39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF694
IEGT
ARF694
igbt 3 KA
C645A
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ARF360
Abstract: No abstract text available
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF360
ARF360
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IEGT 2100
Abstract: ARF671 IEGT Ansaldo SPA IEGT 1500 IGBT I
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF671
IEGT 2100
ARF671
IEGT
Ansaldo SPA
IEGT 1500
IGBT I
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IEGT
Abstract: ARF664
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF664
IEGT
ARF664
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IEGT
Abstract: 500A1000 ARF681
Text: POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - Fax + 39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation ARF681 FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS
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ARF681
IEGT
500A1000
ARF681
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IEGT
Abstract: ARF794HT
Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS
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ARF794HT
IEGT
ARF794HT
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IEGT
Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.
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BEE0030A
IEGT
TOSHIBA IEGT
MG1200FXF1US53
MG400FXF2YS53
MG800FXF1US53
MG800FXF
toshiba gto
IEGT toshiba
MG800FX
MG1200FXF1US51
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IEGT 4500V
Abstract: depletion p mosfet IGBT CHIP 1700V IEGT PCIM eric motto NITTA
Text: A 1700V LPT-CSTBT With Low Loss and High Durability Eric Motto*, John Donlon*, Tsutomu Nakagawa*, Youichi Ishimura*, Katsumi Satoh*, Junji Yamada*, Masanori Yamamoto* Shigeru Kusunoki*, Hideki Nakamura*, Katsumi Nakamura* *Powerex Incorporated, Youngwood, PA USA
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calculation of IGBT snubber
Abstract: abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB
Text: New family of 4.5kV press-pack IGBTs. Positive development in power electronics New family of 4.5kV Press-pack IGBTs F. Wakeman, G. Li, A. Golland Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK Tel: +44 0 1249 441122, e-mail: frank.wakeman@westcode.com
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EPE99,
T0900TA52E
calculation of IGBT snubber
abb press-pack igbt
IEGT
press-pack igbt
IEGT presspack
McMurray
6.5kV IGBT
GTO 4.5kv
press-pack iegt
IGBT 3.3KV ABB
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the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating
Text: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK
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*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004O
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
*45F122
GT30f124
*30g122
*30f124
IGBT GT30F124
GT30J124
GT45F122
GT30F123
TPCA*8023
GT50N322
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004O
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
GT45F122
TK13A60U
GT30F123
2SK4207
GT30J124
IGBT GT30F123
gt30f122
GT30G122
2SC5471
IGBT GT30J124
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der 007
Abstract: superhet
Text: EF 8 EF 8 Rauscharm e H.F.-Verstär- kerröhre-Selektode Die R öhre E F 8 ist eine H .F.-V erstärkerröhre m it veränderlicher Steil max32 heit, die sich durch besonders geringes R auschen kennzeichnet. Da das r — i Rauschen von Schirm gitterröhren und Penthoden hauptsächlich durch
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max32
der 007
superhet
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