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    IEEE J. SOLID STATE CIRCUITS, SC Search Results

    IEEE J. SOLID STATE CIRCUITS, SC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    IEEE J. SOLID STATE CIRCUITS, SC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADS varactor diode

    Abstract: varactor diode ADS
    Text: A Single Chip Silicon Bipolar Receiver for GPS/GLONASS Applications Conference: IEEE International Solid-State Circuits Conference 1999 Session: Communications Author: Michael J. McCullagh Affiliation: Symmetricom Ltd Contact details: Michael J. McCullagh


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    GPS jamming detector

    Abstract: ADS varactor diode GLONASS chip SAW GPS GLONASS filter glonass antenna varactor diode ADS
    Text: A Single Chip Silicon Bipolar Receiver for GPS/GLONASS Applications Conference: IEEE International Solid-State Circuits Conference 1999 Session: Communications Author: Michael J. McCullagh Affiliation: Symmetricom Ltd Contact details: Michael J. McCullagh


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    Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

    Abstract: 180NM IBM
    Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE


    Original     		PDF 11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM

    A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology

    Abstract: No abstract text available
    Text: 200 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 22, NO. 4, APRIL 2012 A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Christophe Masse, William Vaillancourt, and


    Original     		PDF 90-nm A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology

    SN74ABT7819

    Abstract: SN74ACT7807 SCZA004A
    Text: Metastability Performance of Clocked FIFOs First-In, First-Out Technology Chris Wellheuser Advanced System Logic – Semiconductor Group SCZA004A 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


    Original     		PDF SCZA004A SN74ABT7819 SN74ACT7807 SCZA004A

    SN74ABT7819

    Abstract: SN74ACT7807 SCZA004A
    Text: Metastability Performance of Clocked FIFOs First-In, First-Out Technology Chris Wellheuser Advanced System Logic – Semiconductor Group SCZA004A 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


    Original     		PDF SCZA004A SN74ABT7819 SN74ACT7807 SCZA004A

    NMX-J-353-ANCE-2006

    Abstract: MCC panel design C37.20.9-2007 allen bradley e1 plus Allen-Bradley soft starter smc-3 NMX-J-353 Allen-Bradley VFD Powerflex 700 Allen Bradley Bulletin 800T Bradley smc-3 Allen-Bradley soft starter
    Text: SECTION 26 24 19.10 MOTOR CONTROL CENTERS MOTOR CONTROL CENTERS - LOW VOLTAGE CENTERLINE 2100 PART 1 GENERAL 1.01 SCOPE A. Section includes the requirements for 600 V class Low Voltage Motor Control Centers (MCCs) for use on alternating current power systems


    Original     		PDF 2100-SR007C-EN-E 2100-SR007B-EN-E NMX-J-353-ANCE-2006 MCC panel design C37.20.9-2007 allen bradley e1 plus Allen-Bradley soft starter smc-3 NMX-J-353 Allen-Bradley VFD Powerflex 700 Allen Bradley Bulletin 800T Bradley smc-3 Allen-Bradley soft starter

    constant time delay

    Abstract: SN74ABT7819 SN74ACT7807 SCZA004A
    Text: Metastability Performance of Clocked FIFOs First-In, First-Out Technology Chris Wellheuser Advanced System Logic – Semiconductor Group SCZA004A 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


    Original     		PDF SCZA004A constant time delay SN74ABT7819 SN74ACT7807 SCZA004A

    Fairchild uA710

    Abstract: binary to gray code converter circuit diagram us circuit for binary to gray code converter binary to gray code converter 3-bit magnitude comparator HS810 Design a 3-bit magnitude comparator by using basic 4 bit gray to binary converter circuit ua710 application note folding-ADC
    Text: MT-025 TUTORIAL ADC Architectures VI: Folding ADCs by Walt Kester INTRODUCTION The "folding" architecture is one of a number of possible serial or bit-per-stage architectures. Various architectures exist for performing A/D conversion using one stage per bit, and the


    Original     		PDF MT-025 Fairchild uA710 binary to gray code converter circuit diagram us circuit for binary to gray code converter binary to gray code converter 3-bit magnitude comparator HS810 Design a 3-bit magnitude comparator by using basic 4 bit gray to binary converter circuit ua710 application note folding-ADC

    transistor RCA 467

    Abstract: ota ca 3080 RCA 3080 rca CA3080 RCA 467 rca cmos book rca cmos handbook IEEE J. Solid State Circuits, SC "rca application note" rca 1967
    Text: R. L. Geiger and E. Sánchez-Sinencio, "Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial," IEEE Circuits and Devices Magazine, Vol. 1, pp.20-32, March 1985. Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial


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    hot electron devices

    Abstract: SGS-Thomson ball grid array VLSI Vision
    Text: CHAPTER 6 TOWARDS THE FUTURE “Tomorrow will differ from yesterday. It will be new and depend on us. It is to be invented more than discovered” 6.1 VISION Vision 2000 By the year 2000, be among the top world suppliers and be recognized as the “best-inclass” in service and environmental protection,


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    SC11

    Abstract: "Olivetti"
    Text: Copyright  2000 IEEE. Reprinted from: R. Micheloni, Matteo Zammattio, Giovanni Campardo, Osama Khouri, Guido Torelli, "Hierarchical Sector Biasing Organization for Flash Memories", 2000 IEEE International Workshop on Memory Technology, Design and Testing MTDT 2000 ,


    Original     		PDF SC-32, 40mm2 50MHz SC11 "Olivetti"

    MT-022

    Abstract: delta modulation tutorial sigma delta Hauser MASH vacuum tube 80 MT-001 analog devices transistor tutorials phillips handbook MASH 1bit
    Text: MT-022 TUTORIAL ADC Architectures III: Sigma-Delta ADC Basics by Walt Kester INTRODUCTION The sigma-delta Σ-Δ ADC is the converter of choice for modern voiceband, audio, and highresolution precision industrial measurement applications. The highly digital architecture is


    Original     		PDF MT-022 MT-022 MT-023. MT-022) delta modulation tutorial sigma delta Hauser MASH vacuum tube 80 MT-001 analog devices transistor tutorials phillips handbook MASH 1bit

    Mn2O3

    Abstract: 20D3 graphite foil APEC ips presentation
    Text: 1 of 9 Improvements with Polymer Cathodes in Aluminum and Tantalum Capacitors John D. Prymak KEMET Electronics Corporation P. O. Box 5928 Greenville, SC 29606 Abstract – Reducing ESR in the tantalum capacitor has been the key driver in the application of polymer as a replacement for the


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    PRINCIPLE OF TEMPERATURE SENSOR LM35

    Abstract: ic1 cd4060 pin diagram NPN Transistor DRIVER for lm3914 ASTABLE MULTIVIBRATOR CD4060 16 PIN COS IC CD4060 sensor LM35 driver applications for the CD4060 IC Thermometer LM35 equivalent CD4060 timer IC lm35 sensor interfacing with adc
    Text: INTRODUCTION Most commonly-used electrical temperature sensors are difficult to apply For example thermocouples have low output levels and require cold junction compensation Thermistors are nonlinear In addition the outputs of these sensors are not linearly proportional to any temperature scale Early


    Original     		PDF LM3911 LM134 LM135 PRINCIPLE OF TEMPERATURE SENSOR LM35 ic1 cd4060 pin diagram NPN Transistor DRIVER for lm3914 ASTABLE MULTIVIBRATOR CD4060 16 PIN COS IC CD4060 sensor LM35 driver applications for the CD4060 IC Thermometer LM35 equivalent CD4060 timer IC lm35 sensor interfacing with adc

    AL 2001

    Abstract: AL-2001 graphite foil capacitor electrolyte datasheet F2118 mno2 Al2001 T557
    Text: Performance Improvements with Polymer Ta and Al 2001 APEC by John Prymak Applications Manager P.O. Box 5928 Greenville, SC 29606 Phone (864) 963-6300 Fax (864) 963-66521 www.kemet.com F2118 12/04 1 of 9 Improvements with Polymer Cathodes in Aluminum and Tantalum Capacitors


    Original     		PDF F2118 AL 2001 AL-2001 graphite foil capacitor electrolyte datasheet mno2 Al2001 T557

    Modeling of SOI FET for RF Switch Applications

    Abstract: No abstract text available
    Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is


    Original     		PDF 12-stacked 12stacked Modeling of SOI FET for RF Switch Applications

    Widlar

    Abstract: lm12 op amp 150W TRANSISTOR AUDIO AMPLIFIER 800W TRANSISTOR npn 800w inverter AN-446B frederiksen Three-Five Widlar AN-21 LM12
    Text: National Semiconductor Application Note 446B April 1998 Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions.


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    600W TRANSISTOR AUDIO AMPLIFIER

    Abstract: Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995
    Text: National Semiconductor Application Note 446B 446B October 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract The standard junction-isolated power process has been modified by the addition of polycrystalline-film resistors to solve the topological problems encountered in


    Original     		PDF 01-percent 600W TRANSISTOR AUDIO AMPLIFIER Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995

    Widlar

    Abstract: AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER
    Text: Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions. Still


    Original     		PDF an009301 Widlar AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: To Meet IEEE STD. 587—Categories A andB AC Power Line Surge Standards : • Low Clamping Voltage • Survives Multiple IEEE 587 Surges OEM Built-In Protection For: • Computers • Motor Controls • Instrumentation j • Industrial Controls • Telecommunications • Audio-Video .


    OCR Scan     		PDF 587B051 587B151 587B201

    Untitled

    Abstract: No abstract text available
    Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process


    OCR Scan     		PDF HR1060 1x106 1x109rad 1x1012rad 1x109upsets/bit-day 1x1014cnrr2

    ic 8255 PPI

    Abstract: PPI 8255 interface data serial 8255 PPI Chip PPI 8255 interface word control Control word 8255 PPI ppi interface 1007 SC1114 NUM mnda
    Text: Honeywell Advance Information TEST-BUS INTERFACE UNIT HTIU2100 FEATURES • Module Test and Maintenance Bus Interface - IEEE P1149.5 Compatible Backplane - Master or Slave Operation - Module Clock Generation Capability • Serial Chip-Level Test Interface


    OCR Scan     		PDF P1149 HTIU2100 ic 8255 PPI PPI 8255 interface data serial 8255 PPI Chip PPI 8255 interface word control Control word 8255 PPI ppi interface 1007 SC1114 NUM mnda

    Untitled

    Abstract: No abstract text available
    Text: L.3E D MSS1Ô7S D 0 G 1 0 2 b HONEYl i l ELL/ S 3MD • H 0 N 3 Honeywell S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HX1060 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x105 rad SiOa OTHER In production on Honeywell's 1.2 (im Minimum


    OCR Scan     		PDF HX1060 1x105 1x1013rad