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    CQY78

    Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
    Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge


    Original     		PDF BPW33) CQY78 CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium

    CQY78

    Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
    Text: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The


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    TRANSISTOR si 6822

    Abstract: LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 lm3140 SN-72500 transistors br 6822 Siemens technische transistor 6823
    Text: Technische Erläuterungen SIEMENS Allgem eines O ptoelektronische Bauelem ente haben in der m odernen Elektronik und dam it in fast allen Bereichen unseres Lebens weiten Eingang gefunden. Sie sind in hohem Maße an dem Um stellungsprozeß von Mechanik auf Elektronik beteiligt und haben, aufgrund ihrer Funktion als


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