BCW81
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3
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OT-23
BCW81
C-120
BCW81
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
BCW81
C-120
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BCW31
Abstract: BCW32 BCW33
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking
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OT-23
BCW31
BCW32
BCW33
BCW31
BCW32
BCW33
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BCW32
Abstract: BCW31 BCW33
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS
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OT-23
BCW31
BCW32
BCW33
BCW31
BCW32
BCW33
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS
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OT-23
BCW31
BCW32
BCW33
BCW31
BCW32
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Untitled
Abstract: No abstract text available
Text: SMB3W-420/525/640-I TECHNICAL DATA High Power LED, SMD InGaN / GaInAsP SMB3W-420/525/640-I are multi chip High Power LEDs, isolated mounted on a cooper heat sink with a 5x5 mm SMD package and molded with silicone resin. On forward bias, it emits a radiation
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SMB3W-420/525/640-I
SMB3W-420/525/640-I
420nm,
525nm
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1
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KTC4377
OT-89
500mW
500mA
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes IC Transistor T SMD Type Product specification KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1
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KTC4377
OT-89
500mW
500mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW81 = K3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3
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OT-23
BCW81
C-120
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type NPN general purpose double transistor BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage
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BCV61
BCV61A
BCV61C
BCV61B
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage
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BCV62
BCV62A
BCV62C
BCV62B
BCV61
BCV61A
BCV61B
BCV61C
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MARKING k3 SOT-23
Abstract: BCW81
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3
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Original
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OT-23
BCW81
C-120
MARKING k3 SOT-23
BCW81
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bcf81
Abstract: transistor smd marking NA sot-23
Text: Transistors IC SMD Type NPN General Purpose Transistors BCF81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1
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BCF81
OT-23
bcf81
transistor smd marking NA sot-23
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification KC857T BC857T SOT-523 Unit: mm +0.1 1.6-0.1 Features +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 Low voltage (max. 45 V). +0.01 0.1-0.01 0.55 Low current (max. 100 mA) 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1
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KC857T
BC857T)
OT-523
KC857CT
KC857AT
KC857BT
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marking 1E
Abstract: Transistors smd 1G smd 1f MARKING 1F BC847T
Text: Transistors SMD Type NPN General Purpose Transistors KC847T BC847T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 Low voltage (max. 45 V). +0.05 0.8-0.05 Low current (max. 100 mA) +0.01 0.1-0.01 0.55 Features 0.35 3 +0.25 0.3-0.05
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KC847T
BC847T)
OT-523
KC847AT
KC847BT
KC847CT
marking 1E
Transistors smd 1G
smd 1f
MARKING 1F
BC847T
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO
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BCV62
BCV62B
BCV61
BCV61A
BCV61B
BCV61C
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30
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BCV61
BCV61C
BCV61B
BCV61A
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SMB1N-420H-02
Abstract: No abstract text available
Text: SMB1N-420H-02 v 1.0 17.07.2014 Description SMB1N-420H-02 is a surface mount InGaN High Power LED with a typical peak wavelength of 420 nm and radiation of 420 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.
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SMB1N-420H-02
SMB1N-420H-02
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification KC847T BC847T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 Low voltage (max. 45 V). +0.05 0.8-0.05 Low current (max. 100 mA) +0.01 0.1-0.01 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1
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KC847T
BC847T)
OT-523
KC847AT
KC847BT
KC847CT
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SMD 3E
Abstract: BC857T SMD Transistors 3f
Text: Transistors SMD Type PNP General Purpose Transistors KC857T BC857T SOT-523 Unit: mm +0.1 1.6-0.1 Features +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 Low voltage (max. 45 V). +0.01 0.1-0.01 0.55 Low current (max. 100 mA) 0.35 3 +0.25 0.3-0.05
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KC857T
BC857T)
OT-523
KC857CT
KC857AT
KC857BT
SMD 3E
BC857T
SMD Transistors 3f
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PDF
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MARKING SMD 4G
Abstract: kc860bw ie 420 smd marking BC860W MARKING SMD 4F
Text: Transistors SMD Type PNP General Purpose Transistors KC860W BC860W Features Low current (max. 100 mA) Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage
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KC860W
BC860W)
KC860W
KC860BW
KC860CW
MARKING SMD 4G
kc860bw
ie 420 smd marking
BC860W
MARKING SMD 4F
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smd transistor marking D3
Abstract: BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 BCW31 BCW32 smd TRANSISTOR marking ku
Text: Transistors IC SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1
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BCW31
BCW32
BCW33
OT-23
BCW32
BCW31
smd transistor marking D3
BCW33
SMD TRANSISTOR D2
marking D2 SOT-23
smd TRANSISTOR marking ku
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smd transistor marking 1B
Abstract: SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g
Text: Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter
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BC846W
BC847W
BC848W
BC846W
BC847W
BC846AW
BC846BW
BC847AW
smd transistor marking 1B
SMD TRANSISTOR MARKING 1F
smd TRANSISTOR 1D
SMD TRANSISTOR MARKING 1M
smd transistor marking 1E
SMD Transistor 1f
SMD TRANSISTOR MARKING 1D
smd 1G
SMD transistor MARKING 65
smd transistor 1g
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XXXXX18
Abstract: 070-003 MENS package land pattern for soic8 PO101
Text: 2 .2 8 0 .0 9 0 2.280 (.090) - BDTTDM VIEW 2 .6 6 0 (.10 5) A LTER N A TE BDTTDM V IE W 1 ,835±,420 6,000 ( , £ 36 ) .2 0 3 C008> 4 , 9 0 0 ¿ C l,9 3 ) UO-O-I 1,27 BSC (.050) “H j- ,070 f .420 (.016) (.003) I, 550 (.060) SID E V IE W UNLESS OTHERWISE SPECIFIED.
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OCR Scan
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XXX-XX18
XXXXX18
070-003
MENS package
land pattern for soic8
PO101
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