MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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TPH9R00CQH
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
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TPH2R408QM
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance |
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XPH2R106NC
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) |
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