SDF460
Abstract: No abstract text available
Text: Jolltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS PET 500V, 21A , 0.27Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (RGs=1.0Mn) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25 *C) Drain Current Pulsed(3)
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300nS,
SDF460
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: PRO D U CT N-CHANNEL ENHANCEMENT MOS FET 500V, 86A, 0 . 0 7 D PARAMETER FEATURES RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-STD-883 SCREENING 1 Q4 |- W -
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MIL-STD-883
OPERATIN11
SDF85NA50
300nS.
03bflbD2
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Untitled
Abstract: No abstract text available
Text: Æ iitro n ,- _ PRODUCT liz? 5b¥f SSÏÏsn'î’n'x"1?[E?Ì3ÌE.'S i:fì S ì ;a«” ”« 6 n - ch a n n el en h an cem en t m o s f e t 500 V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1t .(1 VDSS Drain-Gate Vo 1tage VDGR (R g s -I.OM ci) (l)
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SDF460
5DF460
5DF460
i/dt-100A/
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PDF
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Untitled
Abstract: No abstract text available
Text: U ntren PRODUCT DEVICES.INC. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l VDSS Drain-Gate Vo 1tage VDGR (Rcs-l.OMn) (l) Gate-Source Voltage VGS Cont inuous Drain Current Continuous ID (Tc = 25*C) Drain Current Pulsed(3) IDM PD Total Power Dissipation
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PARA25
IF-21A
fib02
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