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    IDG 650 Search Results

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    IDG 650 Price and Stock

    Sensata Technologies IDGF6-39466-50

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    InvenSense Inc IDG-650

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    Quest Components IDG-650 5
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    IDG 650 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IDG 650

    Abstract: IDG-650 IDG650 J-STD-020D JESD22-B104C JESD22-A108C Invensense MEMS Gyroscope gyro vibratory gyroscope
    Text: InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-0650B-00-05 Release Date: 05/20/10 IDG-650 Dual-Axis Gyro Product Specification A printed copy of this document is


    Original     		PDF PS-IDG-0650B-00-05 IDG-650 IDG-650 IDG 650 IDG650 J-STD-020D JESD22-B104C JESD22-A108C Invensense MEMS Gyroscope gyro vibratory gyroscope

    CEL9220HF13

    Abstract: CEL-9220HF13
    Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com Document Number: PS-IDG-1123B-00 Revision: 6.2 Release Date: 05/13/2011 Preliminary Product Specification IDG-1123 Dual-Axis Gyro


    Original     		PDF PS-IDG-1123B-00 IDG-1123 IDG-1123â CEL9220HF13 CEL-9220HF13

    Untitled

    Abstract: No abstract text available
    Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1215-00-03 Release Date: 04/13/10 IDG-1215 Dual-Axis Gyro Product Specification A printed copy of this document is


    Original     		PDF PS-IDG-1215-00-03 IDG-1215 IDG-1215,

    CEL9220HF13

    Abstract: tanaka gold wire gld Dow Corning DA6501 cel9220 CEL9220HF13H CEL-9220HF13H CEL9220HF CEL-9220HF13 Trimethylated silica cel-9220
    Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1150B-00-05 Release Date: 07/28/08 IDG-1150 Dual-Axis Gyro Product Specification A printed copy of this document is


    Original     		PDF PS-IDG-1150B-00-05 IDG-1150 CEL9220HF13 tanaka gold wire gld Dow Corning DA6501 cel9220 CEL9220HF13H CEL-9220HF13H CEL9220HF CEL-9220HF13 Trimethylated silica cel-9220

    IDG-1215

    Abstract: IDG1215 J-STD-020D PS-IDG-1215-00-04 Invensense MEMS Gyroscope Dual-axis ta-f480 JESD22-A101C vibratory gyroscope
    Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1215-00-04 Release Date: 05/20/10 IDG-1215 Dual-Axis Gyro Product Specification A printed copy of this document is


    Original     		PDF PS-IDG-1215-00-04 IDG-1215 IDG-1215, IDG1215 J-STD-020D PS-IDG-1215-00-04 Invensense MEMS Gyroscope Dual-axis ta-f480 JESD22-A101C vibratory gyroscope

    CEL9220HF13

    Abstract: CEL9220HF CEL9220 CEL9220HF13H CEL-9220HF13 cel-9220 22-A108 CEL-9220HF13H DA6501 IDG1123
    Text: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1123B-00-06 Release Date: 04/13/10 IDG-1123 Dual-Axis Gyro Product Specification A printed copy of this document is


    Original     		PDF PS-IDG-1123B-00-06 IDG-1123 CEL9220HF13 CEL9220HF CEL9220 CEL9220HF13H CEL-9220HF13 cel-9220 22-A108 CEL-9220HF13H DA6501 IDG1123

    IDG 600

    Abstract: IDG-300 PS-IDG-0300B-00-03 9220HF13H IDG300 Gyroscope InvenSense Inc. IDG300 IDG-300B 22-A101 CIRCUIT DESIGN FOR A CAPACITIVE MEMS GYROSCOPE
    Text: InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-0300B-00-03 Release Date: 04/13/10 IDG-300B Dual-Axis Gyro Product Specification A printed copy of this document is


    Original     		PDF PS-IDG-0300B-00-03 IDG-300B 3050B 3540B/ 3550B IDG 600 IDG-300 PS-IDG-0300B-00-03 9220HF13H IDG300 Gyroscope InvenSense Inc. IDG300 22-A101 CIRCUIT DESIGN FOR A CAPACITIVE MEMS GYROSCOPE

    Untitled

    Abstract: No abstract text available
    Text: Integrated Dual-Axis Gyro IDG-1215 FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDG-1215 is an integrated dual-axis angular rate sensor gyroscope . It uses InvenSense’s proprietary and patented MEMS technology with vertically driven,


    Original     		PDF IDG-1215 IDG-1215 15mV/Â DS-IDG-1215B-00-01

    Untitled

    Abstract: No abstract text available
    Text: Integrated Dual-Axis Gyro IDG-650 FEATURES • Integrated X- and Y-axis gyros on a single chip • Two separate outputs per axis for standard and high sensitivity: X-/Y-Out Pins: 2000°/s full scale range 0.5mV/°/s sensitivity X/Y4.5Out Pins: 440°/s full scale range


    Original     		PDF IDG-650 27mV/Â DS-IDG-0650B-00-01

    FLM5964-4c

    Abstract: No abstract text available
    Text: p. .fjW-,. FLM5964-4C Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ.) • • • • • High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		PDF FLM5964-4C 36dBm FLM5359-4C 1100mA FLM5964-4c

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-18DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7785-18DA -45dBc FLM7785-18DA

    FLM6472-12D

    Abstract: SCL 1058 FLM6472-12DA
    Text: FLM6472-12DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM6472-12DA -45dBc 30dBm FLM6472-12DA FLM6472-12D SCL 1058

    GaAs FETs

    Abstract: No abstract text available
    Text: FLM6472-8D F| «e . r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz


    OCR Scan     		PDF FLM6472-8D 39dBm -45dBc 28dBm FLM6472-8D Temperature31 GaAs FETs

    cd 1691 cp

    Abstract: Y3015
    Text: F| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-12DA -45dBc 30dBm FLM5964-12DA 3100mA cd 1691 cp Y3015

    Untitled

    Abstract: No abstract text available
    Text: n FLM5964-6D Internally Matched Power GaAs FETs . I 1jU FEATURES • High Output Power: P-idg = 38.0dBm Typ. • High Gain: G -j^B = 10.0dB (Typ.) • High PAE: r iadd = 36% (Typ.) • Low IM3 = -45dBc@Po = 27dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-6D -45dBc 27dBm FLM5964-6D

    FLM6472-4C

    Abstract: No abstract text available
    Text: p.f jW-,. FLM6472-4C Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 36dBm Typ.) High Gain: G-j^B = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		PDF 36dBm FLM6472-4C FLM6472-4C

    FLM5964-8C

    Abstract: No abstract text available
    Text: F|.fjU-,. FLM5964-8C I Internally Matched Power GaAs F E Ts FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed Package


    OCR Scan     		PDF FLM5964-8C FLM5964-8C

    FLM5964-18DA

    Abstract: 5964-18DA 5964-18D
    Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-18DA -45dBc 5964-18D FLM5964-18DA 5964-18DA

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-35DA F| r U J Il j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 6.4 ~ 7.2GHz


    OCR Scan     		PDF FLM6472-35DA -45dBc FLM6472-35DA

    U/25/20/TN26/15/850/FLM6472-18DA

    Abstract: No abstract text available
    Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM6472-18DA -45dBc FLM6472-18DA VD-164 U/25/20/TN26/15/850/FLM6472-18DA

    FLM5964-25DA

    Abstract: CS 5800
    Text: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-25DA 44dBm -45dBc 32dBm FLM5964-25DA CS 5800

    FLM6472-25D

    Abstract: No abstract text available
    Text: F|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM6472-25DA 44dBm -45dBc 32dBm Te298 FLM6472-25D

    GaAs FETs

    Abstract: FLM5964-4D
    Text: F|.fjU. FLM5964-4D J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 9.0dB (Typ.) • High PAE: r iadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-4D 36dBm -45dBc 25dBm FLM5359-4D GaAs FETs FLM5964-4D

    FLM6472-4D

    Abstract: No abstract text available
    Text: FLM6472-4D Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G -j^B = 8.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM6472-4D 36dBm -45dBc 25dBm FLM6472-4D