PG110B
Abstract: nec microwave
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG110B 2 to 8 GHz WIDE BAND AMPLIFIER DESCRIPTION The µPG110B is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage required high gain characteristic of the microwave communication
|
Original
|
PDF
|
PG110B
PG110B
nec microwave
|
IR3Y29B
Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX
|
OCR Scan
|
PDF
|
ARM710
ARM810
IR3T24
IR3T24N
IR3Y05Y
IR3Y08
IR3Y12B
IR3Y18A
IR3Y21
IR3Y26A
IR3Y29B
ir3y26a1
IR4N
IR3T24N
IR3C08N
ir2c53
ir2c05
li3301
IR2E02
|
20M32
Abstract: u1520
Text: CO FIFO BUFFER MEMORY/IC MEMORY CARD ★ U n d e r d e v e lo p m e n t • FIFO BUFFER MEMORIES ♦ Features • It is applicable to communication and OA equipment, as a data buffer between systems operating at different speeds. Bit Capacity configuration
|
OCR Scan
|
PDF
|
280sk
orx16
x8/x16
ID244DXX
ID244Exx
ID244Gxx
ID244Hxx
ID244KXX
20M32
u1520
|
LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
|
OCR Scan
|
PDF
|
109-n
GL1PR112.
GL1PR135.
GL1PR136.
GL1PR211.
GL1PR212.
GL3KG63.
GL3P201.
GL3P202.
GL3P305.
LQ070T5BG01
LM24P20
LM162KS1
BSCR86L00
IR2C07
LM5Q31
IR3Y29B
BSCU86L60
lq6bw
lq6bw506
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG110B 2 to 8 GHz WIDE BAND AMPLIFIER DESCRIPTION T h e /xP G 110B is a G a A s m o n o lith ic in te g ra te d c irc u it d e s ig n e d as a w id e b a n d a m p lifie r from 2 G H z to 8 G H z. T h e d e vice is m ost s u ita b le fo r th e gain stag e re q u ire d high gain c h a ra c te ris tic o f th e m icro w a ve co m m u n ic a tio n
|
OCR Scan
|
PDF
|
uPG110B
|
Untitled
Abstract: No abstract text available
Text: SIEMENS FEATURES * Two Channel Optocoupler * High Current Transfer Ratio at lF=1 mA, 500% Wn. * Withstand Test Voltage, 2500 VRMS * Electrical Specifications Similar to Standard 6 Pin Coupler * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
|
OCR Scan
|
PDF
|
RS481
E52744
ILD223
ID223
|