APT1201R2BFLL
Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Text: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
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APT1201R2BFLL
APT1201R2SFLL
O-247
O-247
APT1201R2BFLLG
1400G
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APT10090BLL
Abstract: APT10090SLL
Text: APT10090BLL APT10090SLL 1000V 12A 0.900Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10090BLL
APT10090SLL
O-247
O-247
APT10090BLL
APT10090SLL
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APT1201R2BFLL
Abstract: APT1201R2SFLL
Text: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT1201R2BFLL
APT1201R2SFLL
O-247
O-247
APT1201R2BFLL
APT1201R2SFLL
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APT10090BFLL
Abstract: APT10090SFLL
Text: APT10090BFLL APT10090SFLL 1000V 12A POWER MOS 7 FREDFET BFLL TO -2 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering
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APT10090BFLL
APT10090SFLL
O-247
APT10090BFLL
APT10090SFLL
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Untitled
Abstract: No abstract text available
Text: APT10090BFLL APT10090SFLL 1000V 12A POWER MOS 7 FREDFET 0.950 BFLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering
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APT10090BFLL
APT10090SFLL
O-247
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Untitled
Abstract: No abstract text available
Text: APT10090BLL APT10090SLL 1000V 12A 0.900Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10090BLL
APT10090SLL
O-247
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APT1201R2BFLL
Abstract: DSA00757 APT1201
Text: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT1201R2BFLL
APT1201R2SFLL
O-247
DSA00757
APT1201
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APT10090BFLL
Abstract: APT10090SFLL
Text: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10090BFLL
APT10090SFLL
O-247
O-247
APT10090BFLL
APT10090SFLL
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APT10090BLL
Abstract: APT10090SLL JESD24
Text: APT10090BLL APT10090SLL 1000V 12A 0.950Ω POWER MOS 7 MOSFET BLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering
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APT10090BLL
APT10090SLL
O-247
APT10090BLL
APT10090SLL
JESD24
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APT1201R2BFLL
Abstract: No abstract text available
Text: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
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APT1201R2BFLL
APT1201R2SFLL
O-247
O-247
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DD 127 D
Abstract: No abstract text available
Text: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10090BFLL
APT10090SFLL
O-247
DD 127 D
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Untitled
Abstract: No abstract text available
Text: APT10090BLL APT10090SLL 1000V 12A 0.950 BLL POWER MOS 7 MOSFET TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering
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APT10090BLL
APT10090SLL
O-247
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2SK895
Abstract: No abstract text available
Text: 2SK895 FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR D RIVE APPLICATIONS. • Low Drain-Source OH Resistance : Rd s (ON)=0 .38fi(Typ.)
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2SK895
300yA
2SK895
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SDF460
Abstract: No abstract text available
Text: Jolltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS PET 500V, 21A , 0.27Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (RGs=1.0Mn) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25 *C) Drain Current Pulsed(3)
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300nS,
SDF460
MIL-S-19500
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YTFP452
Abstract: No abstract text available
Text: TOSHIBA DI SC RETE/OPTO 45E D TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - • TOTTBSQ OOlTTÛb □ ■TOSH Y T r P 1 - rt YTFP452 MOSI) T 1IPs ~\ 3 INDUSTRIAL APPLICATIONS Unit ln nm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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0017Tflb
YTFP452
IDSS-250uA
VDS-500V
Ijj-250uA
Te-25Â
RGSm20kfi)
Vddn210V
VGS-10V
Ta-25<
YTFP452
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Untitled
Abstract: No abstract text available
Text: t¡ T O S H I B A -CDISCRETE/OPTO> 9097250 TOSHIBA CDIS C R E T E /OPTO SEMICONDUCTOR dFI^gtosd 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
300uA
00A/ys
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Untitled
Abstract: No abstract text available
Text: PRODUCT CATÂLO' Æ lltron N -CHANNEL ENHANCEMENT MOS FET 500V, 24A, 0.25 Q SDF24N50 FEATURES • • • • • • • • GAF RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF24N50
11age
IF-24A
fl3Lflti02
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Untitled
Abstract: No abstract text available
Text: J H l t r o n -PRODUCT DEVICES.INC. ¡177 BLUE H E R O N BLVD. • RIVIERA BEACH, FLORIDA 33404 ^ E L : 407 848-4311 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL UNITS Drain-source Vo 1 f .( 1 )
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IF-12A
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: PRODUCT Æ utTon CÁTALO' N-CHANNEL ENHANCEMENT MOS FET 50 0V, 24A, 0.25Q SDF24N50 GAF FEATURES • • • • • • • • SCHEMATIC GH D ra in -s ou rc e Vo 1t . 1 D r ai n- Ga te Voltage G GATE DRAIN 3 SO U R C E STANDARD BEND CONFIGURATIONS (1) Ga te - So ur ce Voltage
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SDF24N50
MIL-S-19500
di/dt-100A/
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt - YTFP453 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0*i±ag DRIVE APPLICATIONS. iSL FEATURES:
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YTFP453
250uA
Ta-25
20kft)
Tc-25
VGS-10V
ID-12A
VDS-25V,
ID-16A
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TRANSISTOR 1300 1b
Abstract: No abstract text available
Text: TO SH IB A D I S C R E T E / O P T O 45E ß • T C H T B S D DDlTTfib □ ■ T0S4 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP452 MOSI) T 1 INDUSTRIAL APPLICATIONS Unit ln HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
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YTFP452
IDSS-250uA
VDS-500V
250uA
Ta-25Â
IDR-12A
00A/us
TRANSISTOR 1300 1b
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