Murata SFr 450 filter
Abstract: exs00a-cs01580 murata filter sfr 450 33DH MARKING TDA5225 EXS00ACS01580 33dh NDK NX5032SD EXS00A CS NX5032SD
Text: Dat a Sh ee t, V1.0 , F eb rua ry 2 01 0 S m a r t L E W I S TM R X + TDA5225 En hanced Sensitivity M ulti-Cha nnel Qua d-C onfi gu rati on R ec ei ve r w ith Di gita l Sl icer Wi re less Co ntro l N e v e r s t o p t h i n k i n g . Edition February 19, 2010
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TDA5225
Murata SFr 450 filter
exs00a-cs01580
murata filter sfr 450
33DH MARKING
TDA5225
EXS00ACS01580
33dh
NDK NX5032SD
EXS00A CS
NX5032SD
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Untitled
Abstract: No abstract text available
Text: Dat a Sh ee t, V1.0 , F eb rua ry 2 01 0 S m a r t L E W I S TM R X + TDA5225 En hanced Sensitivity M ulti-Cha nnel Qua d-C onfi gu rati on R ec ei ve r w ith Di gita l Sl icer Wi re less Co ntro l N e v e r s t o p t h i n k i n g . Edition February 19, 2010
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TDA5225
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"Solenoid Driver"
Abstract: icer capacitor NTE1478 transistor 5a
Text: NTE1478 Integrated Circuit Solenoid Driver & Signal Sensing Circuit Description: The NTE1478 is an integrated circuit in a 10–Lead SIP type package that detects the stopping of a rotary signal and drives a plunger. It is designed for use in auto–reverse and auto–eject car stereo
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NTE1478
NTE1478
Pin10
"Solenoid Driver"
icer capacitor
transistor 5a
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scs thyristor
Abstract: icer capacitor NTE239
Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage
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NTE239
NTE239
scs thyristor
icer capacitor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts
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MRF6414
MRF6414
DL110/D)
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NTE1729
Abstract: PWM Power Control Circuit
Text: NTE1729 Integrated Circuit Pulse Width Modulator PWM Control Circuit Description: The NTE1729 is an inverter control unit in a 16–Lead DIP type package which provides all the control circuitry for PWM type switching regulators. Included in this device is the voltage reference, dual error
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NTE1729
NTE1729
PWM Power Control Circuit
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DMP16
Abstract: NJM3524 NJM3524D NJM3524M NJM3524V SSOP16
Text: NJM3524 SWITCHING REGULATOR CONTROL CIRCUIT • GENERAL DESCRIPTION ■ PACKAGE OUTLINE The NJM3524 of regulating pulse width modulators contains all of the control circuitry necessary to implement switching regulators of either polarity converters and voltage doublers, as well as other power control
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NJM3524
NJM3524
NJM3524D
NJM3524M
DMP16
NJM3524D
NJM3524M
NJM3524V
SSOP16
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SD4701
Abstract: VK-200 200 pF air variable capacitor
Text: SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN.
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SD4701
SD4701
VK-200
200 pF air variable capacitor
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Untitled
Abstract: No abstract text available
Text: NJM3524 SWITCHING REGULATOR CONTROL CIRCUIT GENERAL DESCRIPTION PACKAGE OUTLINE The NJM3524 of regulating pulse width modulators contains all of the control circuitry necessary to implement switching regulators of either polarity converters and voltage doublers, as well as other power control
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NJM3524
NJM3524
NJM3524D
NJM3524M
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SD4701
Abstract: OZ 960 variable capacitor VK-200
Text: SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN.
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SD4701
SD4701
OZ 960
variable capacitor
VK-200
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discon
Abstract: No abstract text available
Text: Designated client product This product will be discontinued its production in the near term. And it is provided for customers currently in use only, with a time limit. It can not be available for your new project. Please select other new or existing products.
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NJM3524
NJM3524
discon
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dc to dc converter application
Abstract: PWM Power Control Circuit DIP18 NJM2355 NJM2355D error amp
Text: NJM2355 TWO OUTPUT HIGH VOLTAGE SWITCHING REGULATOR • GENERAL DESCRIPTION New JRC's high voltage switching regulator, NJM2355, is a monolithic high voltage 50V max operation integrated circuit consisting of two channel PWM controllers. The NJM2355 contains an internal 5V reference, free running
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NJM2355
NJM2355,
NJM2355
NJM2355D
200-mA
dc to dc converter application
PWM Power Control Circuit
DIP18
NJM2355D
error amp
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Untitled
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Programmable unijunction transistor/ Silicon controlled switch FEATURES BRY39 PINNING • Silicon controlled switch • Programmable unijunction
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BRY39
OT18/9
B12/C7type3
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Untitled
Abstract: No abstract text available
Text: I CE RM E T E K MICROELECTRONICS 3ÔE D 2D05ÖQ3 □001115 6 ICER CH1780 — Intelligent Modem Module INTRODUCTION FEATURES The CH1780 modem module offers perhaps the fastest and easiest way of integrating a high performance modem into a product. Integration consists of mounting the module on the pro
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CH1780
CH1780
RJ-11C
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BUK856-450IX
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener
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BUK856-450IX
T0220AB
BUK856-450IX
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BUK856-450IX
Abstract: zener diode f7 T0220AB BUK856 transistor r 606 j
Text: N AUER P H I L I P S / D I S C R E T E bTE D • bbSBiai 0030111 633 * A P X Philips _ Product Specification Insulated Gate Bipolar Transistor BUK856-450IX Protected IGBT _
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0D3CH11
BUK856-450IX
T0220AB
BUK856-450IX
zener diode f7
BUK856
transistor r 606 j
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43 JO smd
Abstract: 1c smd transistor transistor bd135 chip PCN resistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and
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MRF6402
MRF6402
1N4148
BD135
43 JO smd
1c smd transistor
transistor bd135
chip PCN resistor
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150 j47
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts
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MRF6414
MRF6414
VcEO970
150 j47
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40 pin J004
Abstract: transistor bd135
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and
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MRF6402
1N4148
BD135
40 pin J004
transistor bd135
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1206 transistor
Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •
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MRF6406
1206 transistor
chip resistor 1206
smd transistor p1
bd135 equivalent
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
22 pf trimmer capacitor
transistor bd135
8 PIN SMD IC 2671 Equivalent
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TRANSISTOR BC 629
Abstract: BR101 MGL168 philips br101
Text: Philips Semiconductors Product specification Silicon controlled switch DESCRIPTION BR101 PINNING Silicon planar PNPN switch in a TO -72 m etal package. It is an integrated PNP/NPN transistor pair, w ith all electrodes accessible. APPLICATIONS PIN DESCRIPTION
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BR101
S802S
GL168
TRANSISTOR BC 629
BR101
MGL168
philips br101
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transistor bd135
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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TP3032
TP3032
BD135
transistor bd135
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TA76494P
Abstract: No abstract text available
Text: T A ^ I F l f w T w “ BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC l o GENERAL USE SWITCHING REGULATOR 494 TYPE The TA76494P is an IC for 494 type switching regulator, with 5V reference voltage, built-in error amplifier, saw tooth wave generating circuit,
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TA76494P
250mA
12kS2,
TA76494P
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bry39
Abstract: BRY39 circuit BRY39 equivalent philips bry39 transistor ag M8B68O
Text: Philips Sem iconductors Product specification Silicon controlled switch BRY39 PIN CONFIGURATION DESCRIPTION Silicon planar PNPN switch in a TO-72 metal package intended for use in switching applications. It is an integrated PNP/NPN transistor pair, with all electrodes accessible.
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BRY39
-TO-72
bry39
BRY39 circuit
BRY39 equivalent
philips bry39
transistor ag
M8B68O
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