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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ICE10N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 9.5A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.35Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability	Original	PDF	ICE10N65FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: ICE10N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 9.5A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.35Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Original

PDF

ICE10N65FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00