icc3
Abstract: M57788SH 3125V m577
Text: Graph f-Po M57788SH Pout,Icc vs. freq. 12 Vcc1,2,3=12.5V, Pin=0.3W, Tc=+25deg.C Zg=Zl=50ohm 50 Po W Icc1 (A) Icc2 (A) Icc3 (A) Pout (W) 40 11 10 9 8 7 30 6 5 20 4 3 2 10 1 460 470 480 490 500 freq.(MHz) -1- 510 520 530 540 Icc1/Icc2/Icc3 (A) 60 Graph Pin-Po(fL)
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M57788SH
25deg
50ohm
490MHz
500MHz
icc3
3125V
m577
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icc3
Abstract: M57788UH 3125V M5778 M57788
Text: Graph f-Po M57788UH Pout,Icc vs. freq. 12 Po W Icc1 (A) Icc2 (A) Icc3 (A) 50 Vcc1,2,3=12.5V, Pin=0.3W, Tc=+25deg.C Zg=Zl=50ohm Pout (W) 40 11 10 9 8 7 30 6 5 20 4 3 10 2 1 440 450 460 470 480 freq.(MHz) -1- 490 500 510 520 Icc1/Icc2/Icc3 (A) 60 Graph Pin-Po(fL)
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M57788UH
25deg
50ohm
470MHz
480MHz
icc3
3125V
M5778
M57788
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B1242
Abstract: free TSOP 1738 SMD A11L b1241 SMK2-67025EV-30SV qml-38535 75A8L tsop 1738 SMD package ASTM B32 AOR-A12R
Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Added provisions for the inclusion of radiation-hardened devices. Updated boilerplate. Added case outline "Z" to drawing. Added device type 09 to drawing. - glg 00-01-21 Raymond Monnin B Corrections to table 1, ICC3 and ICC5, conditions column. - glg
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F7400
B1242
free TSOP 1738
SMD A11L
b1241
SMK2-67025EV-30SV
qml-38535
75A8L
tsop 1738 SMD package
ASTM B32
AOR-A12R
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EM78P156ELP
Abstract: EM78P156 pin configuration of em78p156 EM78P156ELP application EM78P156ELM EM78P156E AN-003 EM78P156EL EM78P156ELAS EM78P156ELKM
Text: EM78P156EL OTP ROM EM78P156EL 8-BIT MICRO-CONTROLLER Version 1.3 EM78P156EL OTP ROM Specification Revision History Version Content 1.0 Initial version 1.1 Change set up time period 1.2 04/19/2002 Change Power on reset content 07/01/2003 Change ISB1 & ICC3 current range
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EM78P156EL
AN-001
EM78P156E
EM78P156
AN-002
AN-003
EM78P156ELP
pin configuration of em78p156
EM78P156ELP application
EM78P156ELM
EM78P156EL
EM78P156ELAS
EM78P156ELKM
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IDT7025S35GB
Abstract: qml-38535 5962-9161708MXA IDT7025L45FB smd marking 5R TSOP 66 thermal resistance SMK2-67025EV-30SV SMD MARKING CODE UBR
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Added provisions for the inclusion of radiation-hardened devices. Updated boilerplate. Added case outline "Z" to drawing. Added device type 09 to drawing. - glg 00-01-21 Raymond Monnin B Corrections to table 1, ICC3 and ICC5 conditions column. - glg
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zobel
Abstract: 500w power amplifier stereo ENA0177 icc3 icc1 sanyo 16 10X10 AES17 Class-d amplifier BTL audio 100w 100w audio amplifier circuit diagram
Text: Ordering number : ENA0177 Monolithic Linear IC ICC1 PWM Controller IC for Digital Power Amplifier Overview Control chip for high performance stereo class-d amplifier with power range from 20-500W. Used together with the ICC3 driver chip the system will include a full protection scheme including: current limitation, short circuit protection, thermal
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ENA0177
0-500W.
80kHz
00W/ch,
A0177-12/12
zobel
500w power amplifier stereo
ENA0177
icc3 icc1 sanyo 16
10X10
AES17
Class-d amplifier BTL audio 100w
100w audio amplifier circuit diagram
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smd transistor A7R marking
Abstract: smd transistor marking a5l smd dual diode A4l smd diode a3l A1L smd diode smd a4l smd marking A5L A1L smd qml-38535 smd dual diode code A4l
Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Added provisions for the inclusion of radiation-hardened devices. Updated boilerplate. Added case outline "Z" to drawing. Added device type 09 to drawing. - glg 00-01-21 Raymond Monnin B Corrections to table 1, ICC3 and ICC5, conditions column. - glg
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F7400
smd transistor A7R marking
smd transistor marking a5l
smd dual diode A4l
smd diode a3l
A1L smd diode
smd a4l
smd marking A5L
A1L smd
qml-38535
smd dual diode code A4l
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CDC2509
Abstract: MA2180
Text: SDRAM MODULE Preliminary KMM377S3227BT Revision History Revision .2 Jan. 1998 •DC Characteristics values are changed. : ICC2 N & ICC3 N •STANDARD TIMING DIAGRAM is changed . •All AC parameters are measured by module tap reference(refer to page#5) •CAS Latency is based on Reg. DIMM (In case of Unbuff. DIMM CAS Latency is 1 CLK earlier than this)
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KMM377S3227BT
200mA.
100Min
540Min)
250Max
35Max)
010Max
32Mx4
KM44S32037BT
CDC2509
MA2180
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icc3 icc1
Abstract: icc3 M68762H ICC-301 490mhz
Text: MITSUBISHI RF POWER MODULE M68762H 440-490MHz, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 60±0.5 3±0.3 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 0.82±0.2 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY
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M68762H
440-490MHz,
VCC112
440MHz
490MHz
icc3 icc1
icc3
M68762H
ICC-301
490mhz
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M68762L
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68762L 400-450MHz, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 60±0.5 3±0.3 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 0.82±0.2 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY
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M68762L
400-450MHz,
VCC112
450MHz
M68762L
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M57788HR
Abstract: 450-470-MHz
Text: MITSUBISHI RF POWER MODULE M57788HR 450-470MHz, 13.5V, 47W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 2 60±0.5 7.25±0.8 3 4 51.5±0.5 1 5 2-R2±0.5 5 4 3 2 1 6 6 0.82±0.2 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY
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M57788HR
450-470MHz,
VCC113
450MHz
470MHz
M57788HR
450-470-MHz
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M57788LR
Abstract: 430-MHz 400-430MHZ
Text: MITSUBISHI RF POWER MODULE M57788LR 400-430MHz, 13.5V, 47W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 60±0.5 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 5 4 3 2 1 6 6 0.82±0.2 10.5±1 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY
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M57788LR
400-430MHz,
VCC113
430MHz
400MHz
M57788LR
430-MHz
400-430MHZ
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M68762SH
Abstract: ICC3 icc1
Text: MITSUBISHI RF POWER MODULE M68762SH 470-520MHz, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 60±0.5 3±0.3 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 0.82±0.2 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY
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M68762SH
470-520MHz,
VCC112
520MHz
M68762SH
ICC3
icc1
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CXK5T16100TM
Abstract: No abstract text available
Text: CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits.
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CXK5T16100TM
-12LLX
65536-word
16-bit
65536words
16-bits.
120ns
100ns
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M68706H
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68706H 300-308MHz, 12.5V, 20W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 60±0.5 3±0.3 7.25±0.8 2 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 0.8±0.15 PIN: 1 Pin : RF INPUT 2 VCC1 : 1st. DC SUPPLY 3 VCC2 : 2nd. DC SUPPLY
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M68706H
300-308MHz,
VCC112
308MHz
300MHz
300mW
M68706H
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2864b
Abstract: S-2860B S-2864B PARALLEL E2PROM
Text: Contents Features 1 Pin Assignment 1 Block Diagram 2 Operation Mode 2 Absolute Maximum Ratings 2 Recommended Operating Conditions 2 DC Electrical Characteristics 3 Rewriting Times 3 Pin Capacitance 3 AC Electrical Characteristics 4 Operation 8 Dimensions 9
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S-2860B/2864B
64k-bit
S-2860B
S-2864B
32byte
S-2864B:
2864b
PARALLEL E2PROM
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Untitled
Abstract: No abstract text available
Text: Contents Features 1 Pin Assignment 1 Block Diagram 2 Operation Mode 2 Absolute Maximum Ratings 2 Recommended Operating Conditions 2 DC Electrical Characteristics 3 Rewriting Times 3 Pin Capacitance 3 AC Electrical Characteristics 4 Operation 8 Dimensions 9
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64K-bit
S-2860B/2864B
S-2860B
S-2864B
32byte
S-2864B:
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2817A
Abstract: S-2817A 2817A-4 Parallel PROMs S-2812A
Text: Contents Features. 1 Pin Assignment . 1 Block Diagram. 2 Operation Mode . 2
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16K-bit
S-2812A/2817A
2817A
S-2817A
2817A-4
Parallel PROMs
S-2812A
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80 pin simm flash
Abstract: 45/EDI8F16256C-M
Text: \ Selector Guide ELECTRONIC DESI3NS INC Of nsity Organization Part No. Speed ns NEW ✓ ✓ ✓ ✓ Page LP Signifies that a Low Power Version with Data Retention function is available x8 SRAMs ✓ Package Max Current (mA) ICC1 ICC3 2: Megabits 256KX8 EDI8F8257C-B6CLP
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256KX8
512Kx8
EDI8F8257C-B6CL
I8F8257C
EDI8F8259C-M
EDI8F8512C-M
80 pin simm flash
45/EDI8F16256C-M
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256KX8 SIMM
Abstract: 80 pin simm flash
Text: WDl Selector Guide ELECTRONIC DESIGNS INC. Density Organization Part No. Speed ns NEW Max Current (mA) ICC1 ICC3 ✓ ✓ V ✓ 256Kx8 2 2 4 4 256Kx8 256Kx8 512Kx8 512Kx8 512Kx8 Megabits Megabits Megabits Megabits EDI8F8257C-B6ClP EDI8F8257C-BPCLP EDI8F8259C-M6C
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256Kx8
512Kx8
2x512Kx8
EDI8F8257C-B6ClP
EDI8F8257C-BPCL
EDI8F8259C-M6C
256KX8 SIMM
80 pin simm flash
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4T2R
Abstract: No abstract text available
Text: ^EDI Electronic Designs Inc. High Speed with Low Power CMOS SRAM Performance CMOS Static RAMs consume less power than previous Static RAM technologies and are capable of extremely low Low Power power consumption when operating either in standby or different power requirements for each. These five regions,
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Untitled
Abstract: No abstract text available
Text: SONY CXK5V16100TM - 8 5 L L X /1 Q L L X 65536-word x 16-bit High Speed CMOS Static RAM Description C X K 5V 1 610 0T M is a general purpose high speed C M O S static R A M organized as 6 5 53 6-w o rd s by 16-bits. Operating on a single 3.3 V supply, this
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V16100TM
65536-word
16-bit
16-bits.
100ns
65536-w
CXK5V16100TM
44PIN
400mil
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BA 5053
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE bSMTôÉ?1} 0Q17273 l t a - - h bTa " M57788L 400-430MHZ, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING Dimansions in mm BLOCK DIAGRAM > © hK >M > hhi> PIN : Pin : RF INPUT @VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY 0VCC3 : 3rd. DC SUPPLY
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0Q17273
M57788L
400-430MHZ,
430MHz
BA 5053
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5 pin A13E
Abstract: a13e ic
Text: SONY I CXK5T161OOTM 65536-word x 16-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and
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CXK5T161OOTM
65536-word
16-bit
CXK5T16100TM
65536words
16-bits.
-10LLX
-12LLX
-12LLX
5 pin A13E
a13e ic
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