Untitled
Abstract: No abstract text available
Text: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67220FV-C ●Description The BM67220FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the
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BM67220FV-C
BM67220FV-C
SSOP-B20W
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ICC1-100
Abstract: ICC150
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 02. Inactivate device type 01 (no approved source of supply). Add device types 03 through 07. Add vendors CAGE 32116, 5Y243, 57363, and 88379. Changed to reflect MIL-H-38534 processing. Editorial changes throughout.
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5Y243,
MIL-H-38534
8K957.
5962-R189-92.
5962-R110-94.
5962-R013-96.
5962-R110-94
5962ents
U4388
ICC1-100
ICC150
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GP2W0001YP
Abstract: GP2W0002YP 8742H
Text: GP2W0001YP/GP2W0002YP GP2W0001YP/ GP2W0002YP • Features 1. Compliant with IrDA1.0 Compliant with IrDA1.2 low power 2. Integrated package of transmitter/receiver. 8.7x4.2×height 3.15 mm [GP2W0001YP] 3. General purpose 4. Low dissipation current due to shut-down function
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GP2W0001YP/GP2W0002YP
GP2W0001YP/
GP2W0002YP
GP2W0001YP]
GP2W0002YP)
GP2W0001YP
GP2W0001YP
GP2W0002YP
8742H
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Untitled
Abstract: No abstract text available
Text: Document No.: FT_000061 FT2232H DUAL HIGH SPEED USB TO MULTIPURPOSE UART/FIFO IC Datasheet Version 2.08 Clearance No.: FTDI#77 Future Technology Devices International Ltd FT2232H Dual High Speed USB to Multipurpose UART/FIFO IC The FT2232H is FTDI‟s 5th generation of USB
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FT2232H
480Mb/s)
480Mbits/Second)
12MHz
AN2232L-1
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MB89160
Abstract: MB89163L MB89165L MB89P165 FPT-80P-M05
Text: FUJITSU SEMICONDUCTOR DATA SHEET 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89160L Series MB89163L/165L/P165/W165/PV160 • DESCRIPTION The MB89160L series is a line of the general-purpose, single-chip microcontrollers. In addition to a compact instruction set, the microcontrollers contain a variety of peripheral functions such as an LCD controller/driver,
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MB89160L
MB89163L/165L/P165/W165/PV160
16-Kbyte
512-byte
21-bit
8/16-bit
F9606
MB89160
MB89163L
MB89165L
MB89P165
FPT-80P-M05
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4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50308-2E
MB84VD22280FA-70/MB84VD22290FA-70
MB84VD22280FE-70/MB84VD22290FE-70
59-ball
MB84VD22280FA/80FE/90FA/90FE
F0311
4kw marking
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SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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BGA-56P-M01
Abstract: DS05-50216-1E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V
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DS05-50216-1E
MB84VD2108XEA-70/85/MB84VD2109XEA-70/85
56-ball
56-pin
BGA-56P-M01
DS05-50216-1E
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diode G4010
Abstract: ds1302 circuit real time clock Register definitio super cap 5.5v ds1302 block diagram ds1302 circuit ds1302 circuit diagram G4010 DS1202 DS1302 DS1302S
Text: DS1302 DS1302 Trickle Charge Timekeeping Chip FEATURES PIN ASSIGNMENT • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 • 31 x 8 RAM for scratchpad data storage
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DS1302
DS1302S
DS1302Z
G2008
G4010
diode G4010
ds1302 circuit real time clock Register definitio
super cap 5.5v
ds1302 block diagram
ds1302 circuit
ds1302 circuit diagram
DS1202
DS1302
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SA70
Abstract: 18FFFFH
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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DS05-50204-2E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
SA70
18FFFFH
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cmos static ram 1mx8 5v
Abstract: No abstract text available
Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V
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K5P6480YCM
1Mx8/512Kx16)
K5P6480TCM-T085
K5P6480YCM-T085
69-Ball
08MAX
cmos static ram 1mx8 5v
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-102L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642D-75/-102/-102L
576-Word
MB81F641642D
16-bit
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DL322
Abstract: DL323 DL324
Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x4G
16-Bit)
8-Bit/256
73-Ball
FLB073--73-Ball
DL322
DL323
DL324
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SA70
Abstract: 22a17
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50207-4E
MB84VD2228XEA/EE-85
MB84VD2229XEA/EE-85
71-ball
SA70
22a17
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M5M4V4S40CTP-12
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev. 0.3 M5M4V4S40CTP-12, -15 Feb ‘97 Preliminary 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply
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M5M4V4S40CTP-12,
131072-WORD
16-BIT)
83MHz
67MHz
M5M4V4S40CTP-12
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MB81117822A-XXXFN
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11022-2E MEMORY CMOS 2 x 1M × 8 BITS SYNCHRONOUS DYNAMIC RAM MB81117822A-125/-100/-84/-67 CMOS 2 Banks of 1,048,576-WORDS × 8 BITS Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81117822A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11022-2E
MB81117822A-125/-100/-84/-67
576-WORDS
MB81117822A
F9704
MB81117822A-XXXFN
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11024-2E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB811171622A-125/-100/-84/-67 CMOS 2-BANK 524,288-WORD × 16 BIT Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11024-2E
MB811171622A-125/-100/-84/-67
288-WORD
MB811171622A
16-bit
F9703
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11025-3E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81164442A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION
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DS05-11025-3E
MB81164442A-100/-84/-67/-100L/-84L/-67L
304-Word
MB81164442A
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MB8504S064AE
Abstract: MB8504S064AE-100 MDS-144P-P08
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11123-1E MEMORY Un-buffered 4 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8504S064AE-100/-84/-67/-100L/-84L/-67L 144-pin, 2 Clock, 1-bank, based on 4 M × 16 Bit SDRAMs with SPD • DESCRIPTION
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DS05-11123-1E
MB8504S064AE-100/-84/-67/-100L/-84L/-67L
144-pin,
MB8504S064AE
MB811641642A
144-pin
MB8504S064AE-100
MDS-144P-P08
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MB81116420
Abstract: No abstract text available
Text: July 1994 Edition 4.0 FUJITSU DATA SHEET MB81116820-010/-012/-015 CMOS 2 X 1 M X 8 SYNCHRONOUS DRAM CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81116820 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing 16,777,216 memory cells accessible in an 8-bit format. The
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MB81116820-010/-012/-015
576-WORDS
MB81116820
MB81116420
44-LEAD
FPT-44P-M10)
F44015S-1C-1
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Untitled
Abstract: No abstract text available
Text: -P R E L IM I N A R Y July 1996 Edition 1.0 FUJITSU PRO DUCT PROFILE SHEET MB81117422A-125/-100/-84/-67 [2K Refresh] CMOS 2 X 2M X 4 SYNCHRONOUS DRAM CMOS 2 BANKS OF 2,097,152-WORDS x 4-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory
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MB81117422A-125/-100/-84/-67
152-WORDS
MB81117422A
MB81117422A-125
MB81117422A-100
MB81117422A-84
MB81117422A-67
44-LEAD
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYJuly 1996 Edition 1.0 _ _ PRODUCT PROFILE SHEET : MB811171622A-125/-100/-84/-67 F U J IT S U [2K Refresh] CMOS 2 x 512Kx 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 524,288-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory
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MB811171622A-125/-100/-84/-67
512Kx
288-WORDS
16-BIT
MB811171622A
16-bit
MB811171622A-125
MB811171622A-100
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