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    Panasonic Electronic Components PX-ICC101C00

    C COMPILER FOR MN101C SERIES
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    PEPPERL+FUCHS GmbH OIC-C10V2A-CB1-001401-000001

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    PEPPERL+FUCHS GmbH OIC-C10V2A-CB1-005619-000001

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    PEPPERL+FUCHS GmbH OIC-C10V2A-CB1-005628-000001

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    PEPPERL+FUCHS GmbH OIC-C10V2A-CB1-005696-000003

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    ICC10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IC-C-100-E-I Leader Electronic Rectilinear Displacement Transducer for Mounting Inside Hydraulic Actuator Original PDF

    ICC10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67220FV-C ●Description The BM67220FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the


    Original     		PDF BM67220FV-C BM67220FV-C SSOP-B20W

    ICC1-100

    Abstract: ICC150
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 02. Inactivate device type 01 (no approved source of supply). Add device types 03 through 07. Add vendors CAGE 32116, 5Y243, 57363, and 88379. Changed to reflect MIL-H-38534 processing. Editorial changes throughout.


    Original     		PDF 5Y243, MIL-H-38534 8K957. 5962-R189-92. 5962-R110-94. 5962-R013-96. 5962-R110-94 5962ents U4388 ICC1-100 ICC150

    HB56A140BR

    Abstract: No abstract text available
    Text: HB56A140BR Series 1,048,576-word x 40-bit High Density Dynamic RAM Module The HB56A140BR is a 1M × 40 dynamic RAM module, mounted 10 pieces of 4-Mbit DRAM HM514400BS/BLS/CS/CLS sealed in SOJ package. An outline of the HB56A140BR is 72pin single in-line package. Therefore, the


    Original     		PDF HB56A140BR 576-word 40-bit HM514400BS/BLS/CS/CLS) 72pin 72-pin

    MSM51V16165D

    Abstract: MSM51V16165DSL SOJ42-P-400-1
    Text: Pr E2G0132-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16165D/DSL achieves high integration, high-speed operation,


    Original     		PDF E2G0132-17-61 576-Word 16-Bit MSM51V16165D/DSL 42-pin 50/44-pin MSM51V16165D MSM51V16165DSL SOJ42-P-400-1

    MSM51V17805D

    Abstract: MSM51V17805 MSM51V17805DSL
    Text: Pr E2G0129-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,


    Original     		PDF E2G0129-17-61 152-Word MSM51V17805D/DSL 28-pin MSM51V17805DSL MSM51V17805D MSM51V17805 MSM51V17805DSL

    MSM51V17800

    Abstract: MSM51V17800DSL
    Text: Pr E2G0127-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,


    Original     		PDF E2G0127-17-61 152-Word MSM51V17800D/DSL 28-pin MSM51V17800DSL MSM51V17800 MSM51V17800DSL

    msm51v17400d

    Abstract: MSM51V17400 MSM51V17400DSL
    Text: Pr E2G0123-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,


    Original     		PDF E2G0123-17-61 304-Word MSM51V17400D/DSL 26/24-pin MSM51V17400DSL msm51v17400d MSM51V17400 MSM51V17400DSL

    MSM514900CSL

    Abstract: No abstract text available
    Text: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate


    Original     		PDF E2G0025-17-42 MSM514900C/CSL 288-Word MSM514900C/CSL 28-pin 28pin MSM514900CSL

    NHI-1582ETGW

    Abstract: NHI-1582ETGW/883 GAP01 super avr manual ET 8211 NHI-1582ET stanag 4444 STD-1553A A5690 mil bus
    Text: NATIONAL HYBRID, Inc. Multi Protocol Data Bus Interface NHi-ET Enhanced Terminals Bus Controller, Remote Terminal, Bus Monitor User's Manual Version 2000.11.29 November 2000 The information provided in this document is believed to be accurate; however, no responsibility is assumed by NATIONAL


    Original     		PDF 975ET ADR13 ADR14 ADR13 ADR14 982ET 983ET NHI-1582ETGW NHI-1582ETGW/883 GAP01 super avr manual ET 8211 NHI-1582ET stanag 4444 STD-1553A A5690 mil bus

    MSM514256C

    Abstract: DIP20-P-300-2 MSM514256CL
    Text: E2G0010-17-41 ¡ Semiconductor MSM514256C/CL ¡ Semiconductor This version: Jan. 1998 MSM514256C/CL Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS


    Original     		PDF E2G0010-17-41 MSM514256C/CL 144-Word MSM514256C/CL 20-pin 26/20-pin MSM514256C DIP20-P-300-2 MSM514256CL

    CDCLVD2104RHDR

    Abstract: No abstract text available
    Text: CDCLVD2104 www.ti.com SCAS903A – JUNE 2010 – REVISED AUGUST 2010 Dual 1:4 Low Additive Jitter LVDS Buffer Check for Samples: CDCLVD2104 FEATURES 1 • • • • • • • • • • • • Dual 1:4 Differential Buffer Low Additive Jitter <300 fs, RMS in


    Original     		PDF CDCLVD2104 SCAS903A EIA/TIA-644A 28-Pin CDCLVD2104 CDCLVD2104RHDR

    MT28F008B3

    Abstract: MT28F800B3
    Text: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks


    Original     		PDF MT28F008B3 MT28F800B3 40-Pin 48-Pin 16KB/8K-word 100ns MT28F800B3) 8/512K 44-Pin MT28F008B3 MT28F800B3

    MSM51V16800BSL

    Abstract: No abstract text available
    Text: ¡ Semiconductor MSM51V16800B/BSL ¡ Semiconductor MSM51V16800B/BSL E2G0074-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B/BSL achieves high integration, high-speed operation, and


    Original     		PDF MSM51V16800B/BSL E2G0074-17-41 152-Word MSM51V16800B/BSL 28-pin MSM51V16800BSL

    ICT 20 PIN PLASTIC 300 MIL DIP

    Abstract: 22V10 complete details 22CV10AZ 22CV10A PAL22V10 PEEL22CV10AZJ-25 PEEL22CV10AZP-25 PEEL22CV10AZPI-25 PEEL22CV10AZS-25 PEEL22CV10AZT-25
    Text: Commercial/ Industrial PEEL 22CV10AZ -25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - VCC = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz - tPD = 25ns. ■ CMOS Electrically Erasable Technology


    Original     		PDF 22CV10AZ 22V10 outpuPEEL22CV10AZJ-25 PEEL22CV10AZS-25 24-pin PEEL22CV10AZT-25 PEEL22CV10AZPI-25 28-pin ICT 20 PIN PLASTIC 300 MIL DIP 22V10 complete details 22CV10A PAL22V10 PEEL22CV10AZJ-25 PEEL22CV10AZP-25 PEEL22CV10AZPI-25 PEEL22CV10AZS-25 PEEL22CV10AZT-25

    LB1981V

    Abstract: SSOP30 LB1981
    Text: Ordering number : ENN5917 LB1981V Monolithic Digital IC LB1981V Three-Phase Brushless Motor Driver Overview Package Dimensions The LB1981V is a three-phase brushless motor driver especially suited for use mainly with drum motors of portable VCRs. unit: mm


    Original     		PDF ENN5917 LB1981V LB1981V 3191-SSOP30 LB1981V] SSOP30 LB1981

    SOJ42-P-400-1

    Abstract: MSM51V18165DSL
    Text: Pr E2G0133-17-61 im el y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V18165D/DSL achieves high integration, high-speed operation,


    Original     		PDF E2G0133-17-61 576-Word 16-Bit MSM51V18165D/DSL 42-pin 50/44-pin SOJ42-P-400-1 MSM51V18165DSL

    msm51v17800b

    Abstract: MSM51V17800 SOJ28 bsl 100
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2G0076-17-41 MSM51V17800B/BSL MSM51V17800B/BSL 152-Word MSM51V17800B/BSLCMOS2 42CMOS 28SOJ28TSOP 04832ms2 048128msSL 28400milSOJ msm51v17800b MSM51V17800 SOJ28 bsl 100

    msm514800e

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF FEDD514800ESL-01 MSM514800E/ESL msm514800e

    micron memory sram

    Abstract: micron sram MT28C3214P2FL MT28C3214P2NFL FW431
    Text: 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3214P2FL MT28C3214P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no


    Original     		PDF MT28C3214P2FL MT28C3214P2NFL 66-Ball 32K-word 256K-words MT28C3214P2FL micron memory sram micron sram MT28C3214P2NFL FW431

    MSM518128

    Abstract: MSM518128L
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF MSM518128/L SOJ26/24-P-300-1 MSM518128 MSM518128L

    CA10

    Abstract: ZIP20
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2G0149-29-41 MSM514102D/DL MSM514102D/DL 304-Word MSM514102D/DLCMOS4 41CMOS 26/20SOJ20ZIP26/20TSOP 02416ms1 024128msL- 26/20300milSOJ CA10 ZIP20

    Ks-7b

    Abstract: No abstract text available
    Text: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE


    OCR Scan     		PDF TMS417800, TMS417800P 417800/P-60 417800/P-70 417800/P-80 TMS417800 Ks-7b

    Untitled

    Abstract: No abstract text available
    Text: Commercial INC. PEEL 16V8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Features • Compatible with Popular 16V8 Devices — 16V8 socket and function compatible — Programs with standard 16V8 JEDEC file — 20-pin DIP, SOIC, and PLCC packages


    OCR Scan     		PDF 20-pin plastiPEEL16V8JQ-15 PEEL16V8SL-15 PEEL16V8SQ-15 PEEL16V8PL-25 PEEL16V8PQ-25 PEEL16V8JL-25 PEEL16V8JQ-25 PEEL16V8SL-25 PEEL16V8SQ-25

    Untitled

    Abstract: No abstract text available
    Text: HB56UW472EJNB Series, HB56UW464EJNB Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-723B Z Rev.2.0 Jun. 12, 1997 Description The HB56UW472EJNB, HB56UW464EJNB belong to 8 Byte DIMM (Dual In-line Memory Module)


    OCR Scan     		PDF HB56UW472EJNB HB56UW464EJNB 304-word 72-bit 64-bit ADE-203-723B HB56UW472EJNB,