IC51-1844-1148
Abstract: IC51-128 IC51-1964-1952 IC51-1284-1433 IC201 ic51-0804-795 IC51-1014 IC51-1284-1788 IC51-0804-711 IC51-1764-1505-5
Text: QFP, PQFP, TQFP Clamshell IC51 Series IC51- 064 4- 038 Insulation Resistance: Withstanding Voltage: Contact Resistance: Operating Temperature: Socket Series No. of Leads No. of Sides with Contacts Design No. Characteristics 1,000M½minimum at 500 VDC 700 VAC for 1 minute
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10mA/20mV
IC51-0324-805
IC51-0324-354
IC51-0324-1498
QFP11T044-001*
IC51-0444-1195-3
IC51-0444-825
IC51-467-KS11247
IC51-0444-798
IC51-0444-615
IC51-1844-1148
IC51-128
IC51-1964-1952
IC51-1284-1433
IC201
ic51-0804-795
IC51-1014
IC51-1284-1788
IC51-0804-711
IC51-1764-1505-5
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NP351
Abstract: NP351-064-148 NP351-180-139 212207 NP351-21653 NP351-064-227 X3640 np351-532 AC-28179 ac14425
Text: Series NP351 BGA / CSP 0.80mm Pitch TH - Open Top Specifications Part Number (Details) Insulation Resistance: Dielectric Withstanding Voltage: Contact Resistance: Operating Temperature Range: Contact Force: Mating Cycles: 1,000MΩ min. at 100V DC 100V AC for 1 minute
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NP351
10mA/20mV
NP351
NP351-064-148
NP351-180-139
212207
NP351-21653
NP351-064-227
X3640
np351-532
AC-28179
ac14425
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2.45 GHz single chip transmitter
Abstract: Lowpass Filter 3 GHz atr2406 transmitter circuit ATR2406 "application note" antenna 50 ohm 2 ghz Antenna Power Transisitor 100V 2A RF MODULE atr2406 receiver circuit
Text: PCB-Design Guidelines This application note provides information and guidelines to the user for making it very easy and convenient to develop a compliant RF-System with the ATR2406 Single-Chip Low-IF Transceiver IC. The reference layout of the application board is a close to production design,
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ATR2406
ATR2406
23-Aug-04
2.45 GHz single chip transmitter
Lowpass Filter 3 GHz
atr2406 transmitter circuit
"application note" antenna
50 ohm 2 ghz Antenna
Power Transisitor 100V 2A
RF MODULE
atr2406 receiver circuit
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NP351-064-148
Abstract: NP351-18464 NP351 NP351-080-128 20890 14422 NP351-180-139 NP35 400X400 NP351-11230
Text: NP351 Series Open Top Fine Ball Grid Array (FBGA, 0.80mm Pitch) Specifications Part Number (Details) 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:
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NP351
10mA/20mV
CP351-30413-*
NP351-30431-*
NP351-43216-*
NP351-52009-*
NP351-532-83-*
NP351-064-148
NP351-18464
NP351-080-128
20890
14422
NP351-180-139
NP35
400X400
NP351-11230
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Calex
Abstract: 176J 176L
Text: Model 176 and 178 DC Amplifiers Features* ! Drifts to <0.25µV/°C ! Input Impedance >100 MΩ ! CMR: 120 dB @ G = 1000 ! Gain Linearity of ±.005% *The key features of this amplifier series, listed above, do not necessarily apply to all units. Please check individual unit
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176/MK276
MK276
178/MK278
MK278
Calex
176J
176L
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ISO 18000-6D
Abstract: 18000-6D rfid reader 915MHZ EPC gen2 953MHz passive rfid tag circuit diagram 18000-6C 125 kHz RFID tag antenna EM iso/rfid "write sensitivity"
Text: EM MICROELECTRONIC - MARIN SA EM4124 EPC C-1 G-2 / ISO 18000-6C / ISO 18000-6D TOTAL RFID IC Description Features EM4124 is a Class-1 Generation-2 (Gen2) IC compliant with ISO/IEC 18000-6:2010 Type C & Type D (TOTAL) as TM well as EPC Class-1 Generation-2. TOTAL is a tag-talkonly protocol designed for fast moving objects and
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EM4124
18000-6C
18000-6D
64-bit
96-bit
4124-DS
7-Sep-12
ISO 18000-6D
18000-6D
rfid reader 915MHZ
EPC gen2
953MHz
passive rfid tag circuit diagram
125 kHz RFID tag antenna EM
iso/rfid "write sensitivity"
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Calex
Abstract: No abstract text available
Text: Models 176 & 178 DC Differential Amplifiers Features* Description n Drifts to <0.25µV/°C n Input Impedance >100 MΩ n CMR: 120 dB @ G = 1000 n Gain Linearity of ±.005% The 176 all versions and the 178 are general purpose differential input DC amplifiers. The best all-around unit is the
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176/MK276
MK276
178/MK278
MK278
Calex
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Untitled
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM4124 EPC C-1 G-2 / ISO 18000-6C RFID IC Features Description TM EM4124 is a certified EPC Class-1 Generation-2 Gen2 IC and compliant with ISO/IEC 18000-6:2010 Type C. ISO 18000-6C compliant EPC Class-1 Gen-2 certified
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EM4124
18000-6C
EM4124
96-bit
64-bit
32-bit
4124-DS
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ISO 18000-6C
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM4124 EPC C-1 G-2 / ISO 18000-6C RFID IC Description Features TM EM4124 is a certified EPC Class-1 Generation-2 Gen2 IC and compliant with ISO/IEC 18000-6:2010 Type C. ISO 18000-6C compliant EPC Class-1 Gen-2 certified
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EM4124
18000-6C
EM4124
96-bit
64-bit
32-bit
4124-DS
ISO 18000-6C
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TOKO IF COIL
Abstract: BKXN-K4636BJF toko 455khz if transformer 166NNF-10264AG 166NNF10264AG toko 10k coil BKACS-K586HM 614AG-0145GW TOKO quad coil LM1865
Text: 176 r&TOKO Application Notes Application Notes The following listings are provided to help you find the appropriate coils and filters that compliment certain IC’s. Additional listings are developed over time so if you do not find matching devices to IC’s you are using, please contact your nearest TOKO sales
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MC1330A
MC120_
H288LSLS-14653
TH317LTOS-2919PGAF
603F-1011
H286LAIS-14709
LSLS-14653
A287ENKS-14654
SAA7199B
TDA8501
TOKO IF COIL
BKXN-K4636BJF
toko 455khz if transformer
166NNF-10264AG
166NNF10264AG
toko 10k coil
BKACS-K586HM
614AG-0145GW
TOKO quad coil
LM1865
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IC51-1604-845-4
Abstract: IC51-1284-1788
Text: IC51- 064 4- 038 • 1 III! I ‘ Socket Series Insulation Resistance: Characteristics" 1,000MQminimum at 500 VDC Withstanding Voltage: 700 VAC for 1 minute Contact Resistance: 30mQ max. at 10mA/20mV (Initial) PES/PEI -55"C - +170*C Operating Temperature:
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000MQminimum
10mA/20mV
IC51-0324-805
IC51-0324-354
IC51-0324-1498
FP11T044-001*
IC51-0444-1195-3
IC51-1014-KS11137
IC51-1764-1505
IC51-2084-1509
IC51-1604-845-4
IC51-1284-1788
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OC1016
Abstract: SFE 1730 LTE21025R LTE21050R
Text: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R
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Lb53T31
LTE21025R
FO-41B)
OC1016
SFE 1730
LTE21025R
LTE21050R
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EVAL-08/UJA1066TW/5V0/T,51-datasheet
Abstract: No abstract text available
Text: Product Description SXH-1 Stanford M icrodevices’ SXH-1 am plifier is a high linear GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. The SXH-1 offers significant advantages with higher gain and higher linearity than existing com petitive
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Untitled
Abstract: No abstract text available
Text: Product Description SXH-189 Stanford M icrodevices’ SXH-189 am plifier is a high linear GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. The SXH-189 offers significant advantages with higher gain and higher linearity than existing competitive
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SXH-189
SXH-189
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Untitled
Abstract: No abstract text available
Text: QFP, PQFP, & LCC IC51/IC53 Series FEATURES • Any kind of SMT type or IC package type SOP & QFP Available. • High reliability, durability and temperature range. • Custom made also available for high pin count and fine-pitch packages. CHARACTERISTICS
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IC51/IC53
000MQ
10mA/20mV
IC51-064
I50CC
-55CC
IC51-2084-1509
IC51-2404-1655-3
IC51-3044-1471-5
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Untitled
Abstract: No abstract text available
Text: Nom inal diam eter WitfKkaw. Rated force current 4 mm 32 A Safely Jumpers 4 m ir Type Part No SKS 4 -19 L 24.0023-2' Contact resistance 0.3 mQ Safety male jum per 4 mm .160 in dia., plug spacing 19 mm (.750 in), one piece machined brass, bent and gold plated with MC -Multi lam . Polyamide insulated.
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TPM1919
Abstract: TPM1919-40
Text: TPM1919-40 FEATURES: • H IG H PO W ER ■ PARTIALLY M A T C H E D TYPE ■ H E R M E T IC A LL Y SEA LED PACKAGE P-idB = 46. 0 dB m at 1. 9 G H z ■ H IG H GAIN GidB = 13 dB 3t 1. 9 G H z RF PERFO RM AN CE SPEC IFIC A TIO N S Ta = 25 °C C H A R A C TE R IS T IC S
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TPM1919-40
TPM1919-40
TPM1919
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Untitled
Abstract: No abstract text available
Text: Nom inal diam eter Withrfraw. Rated current force 4 mm Contact resistance .itiSfr MutUUm" 0.5 mQ 32 A is Jumpers • 4 mm Type Part No KS 4 -1 9 L 24.002C S -K S 4 - 1 9 L 24.5051 Male jumper 4 mm .160 in dia., plug spacing 19 mm (.750 in), one piece machined brass, bent,
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176L
Abstract: Calex 2492 resistor
Text: Models 176 and 178 F ea tu res * • D rifts to <0 .2 5 |j V /oC ■ Input Im pedance >100 M il ■ C M R : 120 dB @ G = 1000 ■ G ain Linearity of +.005% *The key features of this amplifier series, listed above, do not necessarily apply to all units. Please check individual unit
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176/MK276
MK276
178/MK278
MK278
lflll25Q
176L
Calex
2492 resistor
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Untitled
Abstract: No abstract text available
Text: Insulation coordination and degree of exposure to envi ronmental contamination defined by IEC1010, din vd e 0110. Nominal diameter Withdraw. force Rated current L e a d Trolley, S a fety J u m p e r s 4 mm Type Part No. LK H complete 25.0001 30 cm Contact
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IEC1010,
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15J02
Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen
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F5015
RF5015
AN215A,
MRF5015
15J02
15j02 rf Motorola
motorola 15J02
RF MOSFETs
15J02 motorola
MRF501
F5015
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Untitled
Abstract: No abstract text available
Text: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.
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AT-38043
OT-343
SC-70)
AT-38043
SC-70
5966-1275E
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Untitled
Abstract: No abstract text available
Text: Models 176 and 178 Features* • Drifts to <0.25|jV/oC ■ Input Impedance >100 M£2 ■ CMR: 120 dB @ G = 1000 ■ Gain Linearity of ±.005% *The key features of this amplifier series, listed above, do not necessarily apply to all units. Please check individual unit
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176/M
MK276
MK278
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER G aAs FET MICROWAVE SEMICONDUCTOR TNM2600-7 TECHNICAL DATA FEATURES : • H IG H PO W ER ■ H IG H G AIN ■ H E R M E T IC A LL Y SEALED PA C K A G E PidB = 39-5 dB m at 2.6 G H z G-|cib = 8-5 dB at 2.6 G H z RF PERFORMANCE SPECIFICATIONS Ta = 25°C
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TNM2600-7
TNM2600-7--------------
TNM2600-7
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