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    IC UA 111 HM Search Results

    IC UA 111 HM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC UA 111 HM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74HC04

    Abstract: 74HCT04 CD4689 HMC270MS8G HMC284MS8G 74hct04 cd4689 GaAs IC High Isolation Positive Control Switch
    Text: MICROWAVE CORPORATION HMC270MS8G v02.0701 GaAs MMIC SPDT SWITCH NON-REFLECTIVE, DC - 8.0 GHz Typical Applications Features The HMC270MS8G is ideal for DC - 8.0 GHz applications: Broadband Performance: DC - 8 GHz • CATV Non-Reflective Design • MMDS & WirelessLAN


    Original     		PDF HMC270MS8G HMC270MS8G 74HC04 74HCT04 CD4689 HMC284MS8G 74hct04 cd4689 GaAs IC High Isolation Positive Control Switch

    HMC309MS8

    Abstract: No abstract text available
    Text: HMC309MS8 MICROWAVE CORPORATION 2.4 GHz FRONT-END LNA / SWITCH IC V01.0900 FEBRUARY 2001 General Description Features The HMC309MS8 is a versatile integrated low noise amplifier LNA and transmit/receive switch front-end for 2.3 to 2.5 GHz spread spectrum


    Original     		PDF HMC309MS8 HMC309MS8

    Untitled

    Abstract: No abstract text available
    Text: HMC424G16 v02.1104 ATTENUATORS - SMT 6 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 3 GHz Typical Applications Features The HMC424G16 is ideal for: 0.5 dB LSB Steps to 31.5 dB • Telecom Infrastructure Single Control Line Per Bit • Military Radios, Radar & ECM


    Original     		PDF HMC424G16 HMC424G16

    Untitled

    Abstract: No abstract text available
    Text: HMC424G16 v03.1006 ATTENUATORS - SMT 6 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 3 GHz Typical Applications Features The HMC424G16 is ideal for: 0.5 dB LSB Steps to 31.5 dB • Telecom Infrastructure Single Control Line Per Bit • Military Radios, Radar & ECM


    Original     		PDF HMC424G16 HMC424G16

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE CORPORATION HMC424LP3 v00.1101 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 13 GHz 2 Typical Applications Features The HMC424LP3 is ideal for: 0.5 dB LSB Steps to 31.5 dB • Fiber Optics Single Control Line Per Bit • Microwave Radio +/- 0.5 dB Typical Bit Error


    Original     		PDF HMC424LP3 HMC424LP3

    schematic MA 0403

    Abstract: No abstract text available
    Text: HMC467LP3 v00.0403 MICROWAVE CORPORATION 2 dB LSB GaAs MMIC 2-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 6.0 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC467LP3 is ideal for: 2 dB LSB Steps to 6 dB • Cellular; UMTS/3G Infrastructure High IP3: +50 dBm


    Original     		PDF HMC467LP3 HMC467LP3 schematic MA 0403

    HMC424LP3E

    Abstract: HMC424LP3 HMC424
    Text: HMC424LP3 / 424LP3E v08.0809 ATTENUATORS - DIGITAL - SMT 5 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 13 GHz Typical Applications Features The HMC424LP3 / HMC424LP3E is ideal for: 0.5 dB LSB Steps to 31.5 dB • Basestation Infrastructure Single Control Line Per Bit


    Original     		PDF HMC424LP3 424LP3E HMC424LP3E HMC424LP3 HMC424

    Untitled

    Abstract: No abstract text available
    Text: HMC424LP3 / 424LP3E v08.0809 ATTENUATORS - DIGITAL - SMT 5 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 13 GHz Typical Applications Features The HMC424LP3 / HMC424LP3E is ideal for: 0.5 dB LSB Steps to 31.5 dB • Basestation Infrastructure Single Control Line Per Bit


    Original     		PDF HMC424LP3 424LP3E HMC424LP3E HMC424LP3

    MN638S

    Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		PDF infringement0718 H1-C01EC0-0110015TA MN638S STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M

    Untitled

    Abstract: No abstract text available
    Text: MAGNACHIP SEMICONDUCTOR INC. VFD FIP CONTROLLER/DRIVER ICs HMS81C2400 HMS81C2500 HMS81C2600 User’s Manual (Ver. 2.00) REVISION HISTORY VERSION 2.00 (SEP. 2004) This book The company name, Hynix Semiconductor Inc. changed to MagnaChip. VERSION 1.00 (JUN. 2003)


    Original     		PDF HMS81C2400 HMS81C2500 HMS81C2600

    HMC783LP6CE

    Abstract: DC 0509 SDI Microwave HMC764LP6CE HMC765LP6CE HMC807
    Text: v00.0509 PLLs w/ INTEGRATED VCO - MICROWAVE VCOs OPERATING GUIDE Applicable Products: HMC764LP6CE, HMC765LP6CE, HMC783LP6CE & HMC807LP6CE General Description This operating guide applies to the specified family of IC synthesizers with integrated VCO’s. The purpose of this guide


    Original     		PDF HMC764LP6CE, HMC765LP6CE, HMC783LP6CE HMC807LP6CE HMC783LP6CE DC 0509 SDI Microwave HMC764LP6CE HMC765LP6CE HMC807

    2N174A

    Abstract: 2n174
    Text: .,” un.s.195cu/113 26 JmurY 1565 !a-iwlg Smxncmm Kn.rrA.w SEXIWHLUCIOR DEVICE, ‘lllAK5151WR, Pm, Cmu.mw, mm- TYFE 2i17bA 1. 5c@PE 1.1 k. Thin w.eclric.tl.n tmr,iatnr and in in aocordanco cover. tbs detail rewiwta for a kigh+rxer, FIP germrdum with IUL-.5-195O3 except ● n oWAE*


    Original     		PDF 195cu/113 lllAK5151WR, 2i17bA 5-195O3 EIL4-19X0 WA-19X -195m 2N174A 2n174

    2sb646

    Abstract: 2SD666 2S8646 2SB646A
    Text: HITACHI 2SB646, 2SB646A SILICON PNP EPiTAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A a r 1. Hmiiier 2. Colector Base Dimension« in mm} I A B S O L U T E M AXIM UM R A T IN G S (Ta=255C Item Symbol M AXIM UM C O L L E C T O R D tSSiPA T lO H


    OCR Scan     		PDF 2SB646, 2SB646A 2SD666/A 2SB646 2S8646A 2SD666 2S8646 2SB646A

    Untitled

    Abstract: No abstract text available
    Text: T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 4 R E L E A S E D FO R P U B LIC A T IO N R EVISIONS -, - ALL RIG HTS R ESER VED , By - AD 00 D E S C R IP T IO N REVISED PER E C O - 1 1 - 0 0 4 9 1 7 RK HMR lMAR 11 FL=n D D C O N TA C T IDENTIFICATION


    OCR Scan     		PDF

    intel 2114 static ram

    Abstract: intel 2114a 2114A-4 intel 2114 2114A intel 2114 1024 4 bit 2114AL-4 2114 static ram intel 2114AL-2 2114AL-3
    Text: intei 2114A 1024 X 4 BIT STATIC RAM 2114AL-1 2114AL-2 2114AL-3 2114AL-4 2114A-4 2114A-5 100 120 150 200 200 250 40 40 40 70 70 Max. Access Time ns 40 Max. Current (mA) Completely Static Memory • No Clock or Timing Strobe Required • HMOS Technology ■ Low Power, High Speed


    OCR Scan     		PDF 2114AL-1 2114AL-2 2114AL-3 2114AL-4 114A-4 114A-5 4096-bit intel 2114 static ram intel 2114a 2114A-4 intel 2114 2114A intel 2114 1024 4 bit 2114 static ram intel

    5962-8776201VX

    Abstract: 5962-87762012X AD7575SQ 7575T CTD 43
    Text: OESC FORM 193 SEP 87 DISTRIBUTION STATEM ENT A. * U.S. GOVERNMENT HMNT1NG OfFICt I9ST — 74*-129/409! I 5962-E694 Approved lor public release; distribution is unlimited. 1. SCOPE 1.1 Scope. T h is drawing describes device requirements f o r c la s s B m ic ro c irc u its in accordance


    OCR Scan     		PDF 5962-8776201VX AD7575SQ/883B 5962-87762012X AD7575SE/8838 5962-8776202VX AD7S75TQ/883B 5962-87762022X AD7575TE/883B AD7575SQ 7575T CTD 43

    diode marking GDE on semiconductor

    Abstract: Diode GFK 48 GFM 57, TVS diode marking GDg on semiconductor Diode GFK 32 Diode GFK 34 GEZ 44 A diode diode GEP 86 A GHR TVS Power supply GDP-002 94V-0 cem-1 94v-0
    Text: is Pb TAIWAN SEMICONDUCTOR SMCJ SERIES 600 Watts Surface Mount Transient Voltage Suppressor SMC/DO-214AB RoHS COMPLIANCE Features + UL Recognized File # E-326243 -y - For surface mounted application Low profile package Built-in strain relief Glass passivated junction


    OCR Scan     		PDF SMC/DO-214AB E-326243 diode marking GDE on semiconductor Diode GFK 48 GFM 57, TVS diode marking GDg on semiconductor Diode GFK 32 Diode GFK 34 GEZ 44 A diode diode GEP 86 A GHR TVS Power supply GDP-002 94V-0 cem-1 94v-0

    ZP35

    Abstract: No abstract text available
    Text: tiÊÈtifI-k’i'M'J:<•]•!»i * i i Rev. 15 Apr. 25, 1990 HM574256JP/ZP-35R/40/45 2 6 2 ,144-Word x 4-Bit High Speed Dynamic Random Access Memory •^H IT A C H I The Hitachi HM574256 is a super high speed dynamic RAM organized 262,144-word x 4-bit. HM574256 has realized higher density, higher performance and


    OCR Scan     		PDF HM574256JP/ZP-35R/40/45 144-Word HM574256 144-word HM574256JP/ZP-40/45 HM574256JP/ZP-35R 35ns/40ns/45ns C89-463C6S ZP35

    2114A-4

    Abstract: BIT 3195 G intel 2114a memory ic 2114a V/2114A
    Text: in te i 2114A 1024 X 4 BIT STATIC RAM 2114AL-1 2114AL-2 2114AL-3 2114AL-4 2114A-4 2114A-5 100 120 150 200 200 250 40 40 40 40 70 70 Max. Access Tima na Max. Currant (mA) • HMOS Technology ■ Low Power, High Speed ■ Directly TTL Compatible: All Inputs


    OCR Scan     		PDF 2114AL-1 2114AL-2 2114AL-3 2114AL-4 114A-4 114A-5 4096-bit 2114A-4 BIT 3195 G intel 2114a memory ic 2114a V/2114A

    DN851

    Abstract: No abstract text available
    Text: DN851 J W t] \ — zp 7=f-t'5/5^JL/IC DN851 4 t í "j h JlR iË 2 f ë j j > ^ / 4 B i t R e v e rsib le B in a ry C o u n te r • 1§£ ^ / D e s c r i p t i o n DN851 i±, U nit ! mm j - — i-ìlfejffl £ L T S x f f ? ix Í 2<r lla; li 3<r 1 4<L s 5<i


    OCR Scan     		PDF DN851 dn85I DN851 08max. 14-Lead

    VALVO Handbuch

    Abstract: valvo handbuch rohren valvo 89 8937 000 Valvo Bauelemente GmbH YD 1175 valvo halbleiter YD1170 20kw Triode triode FU 33
    Text: Elektronik. Wir bauen die Elemente. Senderöhren für Industrie­ generatoren 1983 Datenbuch Elektronik. Wir bauen die Elemente. Unser A rbeitsgebiet - besonders die M i­ kroelektronik - e ntw ickelt sich im m er rascher zum M otor für eine Vielzahl von Innovationen.


    OCR Scan     		PDF

    Z8030CMB

    Abstract: 56708 TDA 1240 Z8000 Z8030 Z8030ACMB military part marking symbols serial number z-scc
    Text: DESC FORM 193 1. SCOPE 1.1 Scope. This drawing describes device requirements fo r class B m icrocircuits in accordance with 1 .2 .1 of MIL-STD-883, "Provisions fo r the use of MIL-STD-883 in conjunction with compliant non-JAN devices". 1.2 Part number. The complete p a rt number shall be as shown in the follow ing example:


    OCR Scan     		PDF MIL-STD-883, MIL-STD-883 MIL-M-38510 Z8030A Z8030 5962-8551801QX Z8030ACMB Z8030AD2/883 5962-8551801YX Z8030ALMB Z8030CMB 56708 TDA 1240 Z8000 military part marking symbols serial number z-scc

    Untitled

    Abstract: No abstract text available
    Text: klE D • MMTb203 0053517 130 ■ H I T 2 HB56G51236 Series- HITACHI/ logic/arrays/heh 524,288-Word x 36-Bit High Density Dynamic RAM Module The HB56G51236B/SB is a 5 12k x 36 dynamic RAM module, mounted 4 pieces of 4-Mbit DRAM HM514280AJ/ALJ sealed in SOJ package. An


    OCR Scan     		PDF MMTb203 HB56G51236 288-Word 36-Bit HB56G51236B/SB HM514280AJ/ALJ) HB56G51 236B/SB 72-pin HB56G5I236B/SB

    A1406

    Abstract: No abstract text available
    Text: HOA1406 Reflective Sensor FE A TU R ES . C hoice of phototransistor o r photodartington output . Low profile package . H erm etic style em itter and detector • Focused fo r m axim um response • 24.0 in. 610 mm min. 26 AW G T eflon insulated lead w ires


    OCR Scan     		PDF HOA1406 A1406-001) A1406-003) A1406