Untitled
Abstract: No abstract text available
Text: 2SA1245 TO SHIBA 2 SA 1245 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AM PLIFIER AND SWITCHING APPLICATIONS V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage
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2SA1245
SC-59
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PDF
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TB-534
Abstract: CA1389 98PL311 CA1589 R04350B
Text: 4$>*=3 THIRD ANGLE PROJECTION REV OR A ECN No. M 123889 M 124525 REVISIONS DESCRIPTION DATE DR AUTH 08/18/09 MMG NEW RELEASE MODIFIED DRAWING, CHG. TB IN TITLE 09/22/09 MMG DJ DJ S U G G E S T E D M O U N T IN G C O N F IG U R A T IO N FOR C A 1 5 8 9 C A S E STYLE, ’’0 6 A M 0 1 ” PIN C O D E
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OCR Scan
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M123889
M124525
CA1589
06AM01"
R04350B
TB-534+
06AM01,
CA1389,
98PL311
TB-534
CA1389
98PL311
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PDF
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din 867
Abstract: 842 ic 41585
Text: 13 12 10 M A T E R IA L N O TES: 1. M A T E R IA L H O U S IN G : G L A S S F IL L E D 94V-0, 2. F IN IS H : S E L E C T G O LD SELEC T BO TH POW ER PLU G PLU G 2 PLUG 3 PLU G 4 PLUG T E R M IN A L S PRODUCT 5 SHEET PARTS PEG ARE H O LES M ATES M O LEX TO
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OCR Scan
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SD-45984-100_
din 867
842 ic
41585
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PDF
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GA100TS120K
Abstract: ic tb 1245
Text: PRELIMINARY GA100TS120K ]HALF-BRODGE IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology
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Original
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GA100TS120K
GA100TS120K
ic tb 1245
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PDF
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"Power Diode" 200V 30A
Abstract: RURD3010 RURD3015 RURD3020 RURD3040 diode 200v 30a 200V30A 200V 30A TRANSISTOR
Text: H A RR IS S E M I C O N D SE CT OR RURD3010 RURD3015 RURD3020 HARRIS SbE D • IHAS 4 3 0 2 27 1 G G 4 2 4 1 2 1SD 30A Ultrafast Dual Diode With Soft Recovery Characteristic M ay 1991 TO-218AC TOP VIEW Ultrafast with Soft Recovery Characteristic trr < 45ns
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OCR Scan
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GG42412
RURD3010,
RURD3015,
RURD3020
"Power Diode" 200V 30A
RURD3010
RURD3015
RURD3040
diode 200v 30a
200V30A
200V 30A TRANSISTOR
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PDF
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PD488170L
Abstract: TB 1226 EN NEC RDRAM LN2117 NEC PD488170L
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK D escription The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable of bursting up to 256 bytes o fd a ta a t2 n s p e r byte. The use o f Rambus S ignaling
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OCR Scan
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uPD488170L
18M-BIT
18-Megabit
PD488170L
TB 1226 EN
NEC RDRAM
LN2117
NEC PD488170L
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA °rder Number ^AC10EP33/D Semiconductor Components M C10EP33 SO -8, D SUFFIX 8 - L E A D P L A S T IC S O IC P A C K A G E C A S E 7 5 1 -0 6 ORDERING INFORMATION W* / * , """ j S V iiW ^ .v j / I / •- ,v j V dA vi M C 10EP33D VÜ Product Preview
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OCR Scan
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AC10EP33/D
C10EP33
10EP33D
440ps
MC10EP33/D
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PDF
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Untitled
Abstract: No abstract text available
Text: 0rd6rNn ^ “ MOTOROLA Semiconductor Components M C10EP33 SO -8, D SUFFIX 8 - L E A D P L A S T IC S O IC P A C K A G E C A S E 751 ORDERING INFORMATION f*+ / * , t r - * * J s v ü w ' / F 1 * .v J ,v J / I vdA vj M C 10EP33D "• S O IC vü Product Preview
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OCR Scan
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C10EP33
10EP33D
440ps
MC10EP33/D
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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Original
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I27243
GA100TS120UPbF
GA100TS120UPBF
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PDF
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14D241
Abstract: Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR
Text: Electrolytic Capacitors 1 Potentiometers. 21 Connectors 36 Intermediate Frequency Transformers.55 Varistors. 57 Thermistors 61
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OCR Scan
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045x022x8
I245F
032x018x6
14D241
Bt141
mz3 ptc
14d561
PCB Potentiometers RA 16Y
thermistor MZ4
OS 430 NR, VARISTOR
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PDF
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GA100TS120U
Abstract: No abstract text available
Text: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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Original
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50060B
GA100TS120U
T52-7105
GA100TS120U
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PDF
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GA100TS120U
Abstract: No abstract text available
Text: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100TS120U
GA100TS120U
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PDF
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MPSA42 168
Abstract: U3760MB-N ic 1240 ringer ic 1240 ringer pin diagram 220UF 2N5401 BC546 MPSA42 U3760MB-NFN atmel 948
Text: U3760MB-N Low-Voltage Standard Telephone Circuit Description Atmel Wireless & Microcontrollers’ low-voltage telephone circuit, U3760MB-N, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with
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Original
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U3760MB-N
U3760MB-N,
D-74025
06-Mar-01
MPSA42 168
U3760MB-N
ic 1240 ringer
ic 1240 ringer pin diagram
220UF
2N5401
BC546
MPSA42
U3760MB-NFN
atmel 948
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PDF
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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Original
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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PDF
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2N5401
Abstract: BC546 MPSA42 U3760MB ic 1240 ringer pin diagram 1240 ringer ic 1240 ringer 8 pin diagram
Text: U3760MB Low-Voltage Standard Telephone Circuit Description TEMIC’s low-voltage telephone circuit, U3760MB, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial. Features
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Original
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U3760MB
U3760MB,
D-74025
09-Aug-96
2N5401
BC546
MPSA42
U3760MB
ic 1240 ringer pin diagram
1240 ringer
ic 1240 ringer 8 pin diagram
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PDF
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MPSA42 168
Abstract: 220UF 2N5401 BC546 MPSA42 U3760MB-N U3760MB-NFN
Text: U3760MB-N Low-Voltage Standard Telephone Circuit Description TEMIC Semiconductors’ low-voltage telephone circuit, U3760MB-N, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial.
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Original
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U3760MB-N
U3760MB-N,
D-74025
31-May-99
MPSA42 168
220UF
2N5401
BC546
MPSA42
U3760MB-N
U3760MB-NFN
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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Original
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GA100TS120UPbF
12-Mar-07
GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT
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Original
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GA100TS120UPbF
18-Jul-08
GA100TS120UPBF
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PDF
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E78996 datasheet bridge
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100TS120UPbF
E78996
2002/95/EC
18-Jul-08
E78996 datasheet bridge
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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Original
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GA100TS120UPbF
12-Mar-07
GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT
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Original
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GA100TS120UPbF
18-Jul-08
GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES • Generation 4 IGBT technology 3 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode 6 7
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Original
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GA100TS120UPbF
12-Mar-07
GA100TS120UPBF
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PDF
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SSD1298
Abstract: MARKING S403 KVP45 MARKING S196 SSD1298Z sdc 606 KVP29 MARKING S410 marking S193 marking s186
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1298 Advance Information 240 RGB x 320 TFT LCD Controller Driver integrated Power Circuit, Gate and Source Driver with built-in RAM This document contains information on a new product. Specifications and information herein are subject to change
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Original
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SSD1298
2002/95/EC)
SJ/T11364-2006)
SSD1298
MARKING S403
KVP45
MARKING S196
SSD1298Z
sdc 606
KVP29
MARKING S410
marking S193
marking s186
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PDF
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HE80012M
Abstract: HE80012S HE80016M HE80016S HE80021M HE80021S HE83000 HE83115 HE8P160 Jess Technology
Text: Suites 2202-7, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852 2123 3289 Fax: (852) 2123 3393 E-mail: sales@jesstech.com Home Page: www.jesstech.com HE8P160 HE80000 SERIES A. HE8P160 Introduction HE8P160 is a member of 8-bit Micro-controller OTP series product developed by Jess
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Original
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HE8P160
HE80000
HE8P160
HE80012S,
HE80016S,
HE80021S,
HE83000,
HE80012M,
HE80012M
HE80012S
HE80016M
HE80016S
HE80021M
HE80021S
HE83000
HE83115
Jess Technology
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PDF
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