Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHRT5993GP SURFACE MOUNT NPN Silicon RF Transistor VOLTAGE 11 Volts CURRENT 50 mAmpere APPLICATION * UHF Converter * Local Oscillator SOT-23 .019 0.50 MARKING .066 (1.70) * NPN RF Transistor .110 (2.80) .082 (2.10) .119 (3.04)
|
Original
|
CHRT5993GP
OT-23
OT-23)
-10mA
|
PDF
|
TRANSISTOR bf493
Abstract: bf493 BF491 BF492
Text: BF491 THRU BF493 PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier Darlington Transistor * Power Dissipation: PD=625mW TO-92 .210 5.33 .170(4.32) .205(5.20) .175(4.45) 3 2 1 .082(2.082) .50(12.7MIN.) .078(1.982) .022(0.55)
|
Original
|
BF491
BF493
625mW
BF492
TRANSISTOR bf493
bf493
BF491
BF492
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S P R A G U E / S E M I C O N DG R O U P 8514019 SPRAGUE. ^3 D • f l S 13f l S 0 0003^12 0 S E M IC O N D S/ IC S 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C Vgs oh V(BH)GSS Device
|
OCR Scan
|
TMPF2608
TMPF2609
TMPF3329
TMPF3330
TMPF3331
TMPF3332
TMPF3820
TMPF3993
TMPF3994
TMPF4381
|
PDF
|
RPE MuRata
Abstract: RPE123 RPE131 RPE121 murata Ceramic Capacitors rpe 132 Murata PLA
Text: LEADED CAPACITORS, NETWORKS & HV CAPACITORS m u ffa ta MONOLITHIC LEADED CAPACITORS CER AM IC RADIAL LEADED CAPACITORS RPE 1 1 0 /1 1 3 /1 1 4 /1 1 7 /1 2 1 / 1 22 /1 23 /1 31 /1 32 Series //M o ra to r in E ie c& m ta , T * FEATURES • ■ ■ ■ ■ ■
|
OCR Scan
|
CG01-J
RPE MuRata
RPE123
RPE131
RPE121
murata Ceramic Capacitors
rpe 132
Murata PLA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TA8413P TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 84 13P 3 PHASE BI-DIRECTIONAL HALL MOTOR CONTROL IC FEATURES • FG is not required. System for obtaining rotation signal through position sensing • Start/stop, CW /CCW and brake function is provided.
|
OCR Scan
|
TA8413P
961001EBA2
100mA
DIP20-P-300-2
|
PDF
|
74as643
Abstract: 74as645 DM74ALS 74AS642 74AS640 74AS644
Text: DM54/74AS640, DM54/74AS641, DM54/74AS642, DM54/74AS643, DM54/74AS644, DM54/74AS645 TRI-STATE Octal Bus Transceiver General Description Th is fa m ily o f a d va n ce d S c h o ttk y d evice s c o n ta in s 8 p a irs o f TRI-STATE lo g ic e le m e n ts co n fig u re d as o c ta l bus
|
OCR Scan
|
DM54/74AS640,
DM54/74AS641,
DM54/74AS642,
DM54/74AS643,
DM54/74AS644,
DM54/74AS645
DM54/74AS640
DM54/74AS641
DM54/74AS642
DM54/74AS643
74as643
74as645
DM74ALS
74AS642
74AS640
74AS644
|
PDF
|
Untitled
Abstract: No abstract text available
Text: << INVERTER GRIN/PHRSE vs. FREQUENCY CHflRRCTERISTICS » IC : KS57C0108XME Gain CdB] Ft - 29.7 [MHz] Vdd : 3 M P.M - 103 Cdeg] Freq. CMHz] -> 0 CdB] ?-hi?«JÎe-Sl KS57C0108XME— 1 FCR3.58M5 Vdd- 3 CV3 Fig.a^d Ta- 20 Cdeg3 Typical a. VIH/VIL 7 CV3 5 3
|
OCR Scan
|
KS57C0108XHE
----nil02-8
KS57C0108XME-1
|
PDF
|
TMPF3820
Abstract: TMPF5116 PJ99 TMPFJ271 TMPF5020 TMPF2608 TMPF2609 TMPF3329 TMPF3330 TMPF3331
Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE. ^3 D • flS13flS0 0003^12 0 S E M IC ON D S/ ICS 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oh V(BR)GSS Device Type Min. ftlG (V) (l*A) TMPF2608
|
OCR Scan
|
AS13A5D
TMPF2608
TMPF2609
TMPF3329
TMPF3820
TMPF5116
PJ99
TMPFJ271
TMPF5020
TMPF3330
TMPF3331
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEÎ1IC0ND GROUP 8 5 1 4 0 1 9 SP RA G UE . T3 D • SEMICONDS/ IC S 0513050 QD03bll =1 ■ 93D 03611 $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S o H Limits Igss V(flR]GSS Conditions
|
OCR Scan
|
QD03bll
TMPF5951
TMPF5952
TMPF5953
TMPF6451
TMPF6452
TMPF6453
TMPF6454
TMPFBC264A
TMPFBC264B
|
PDF
|
18MC5
Abstract: uPD753208
Text: IC dependence of oscillating characteristics uPD753208 FCR4.19MC5 - STD Room Temp. Vdd CV3 5 Item a-e UPD753208 - 984 FCR4.19MC5 Ta- 20 Cdeg] 7 5 3 1 -1 7 5 3 1 -1 .5 .3 a. V1H/V1L m b. V2H/V2L CV3 c. Fosc 0—•— -Q Typical »- •» Horst tZl d. Trlse
|
OCR Scan
|
uPD753208
19MC5
18MC5
|
PDF
|
LTS-312 R
Abstract: No abstract text available
Text: COMPONENT RESEARCH CO I LSE D • 2303T11 0000711 G I^O Component Research - c r c J - S20 ■ M ETALLIZED POLYCARBONATE CAPACITOR G 1 2 S P E C IF IC A T IO N S M e ta llize d polycarbonate d ie le c tric , h e rm etically sealed, extended m etal film electrodes,
|
OCR Scan
|
2303T11
LTS-312 R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MODEL N O . TEI P/N LPMWHF 1-0B03 .500 [12.70] 3. METRIC DIMENSIONS IN PARENTHESIS 2. 75 OHM MINI-WECO COAXIAL LOOPING PLUG - HIGH FREQUENCY 1. FINISH: BARRELS, T F S - 1B 2G-GULD C A S E , BLACK DA TA i_L. .fAINED IN THIS DO CUMENT IS PR OPRIETARY TO TROMPETER EL EC TR ON IC S INC.
|
OCR Scan
|
1-0B03
B-20-0I
08-20-D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ~ I S P E C IF IC A T IO N S Phosphor Bronze Materials: Opuonéì ahgnrmr'pms & rnountM p screw thread n: erts c o n ta c t In su lator Material: Liquid Crystal Polym er C ontact M aterial: P hosphor Bronze C ontact Deflection: 0.51m m .020" nom inal O p erating Te m p Range:
|
OCR Scan
|
|
PDF
|
2SA988
Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
Text: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )
|
OCR Scan
|
2SA988
SC-43B
S24-S|
2SA988
2sa988 transistor
A0222-6
1T0266
2SA9881
NEC 41-A 002
PA33
T108
T210
T540
|
PDF
|
|
|
cdb 404
Abstract: FI 201 uPD78F0
Text: IC dependence of osci M a t i n g characteristics uPD78F0134HM4 FCR8.0MC5 - S Room Temp. Udd CU] 5 item a~e uPD 78F 0 I34HM 4 - 201 Ta= CU] — 20 Udeg] e Typical o 1 1 a. U H / U L 80 5 FCR . MC — Unrst. I I I I I I I I I I I I l_ b. U 2 H / U 2 L CU]_
|
OCR Scan
|
uPD78F0l34HM4
UPD78F0I34HM4
uPD78F0134HM4
cdb 404
FI 201
uPD78F0
|
PDF
|
KS57C2616
Abstract: c2616
Text: « INVERTER GRIN/PHRSE vs. IC : KS57C261B FREQUENCY CHRRRCTERISTICS » Vdd : 3 CV3 Freq. [MHz] KS57C2616 - 1 FCR4.19M5 Vdd- 3 CV] Flg.a-d Ta- 20 Cdeg3 Typical a. V1H/V1L 7 5 3 1 -1 : . 3.2 b. V2H/V2L S 1 -1 3 3 3.2 3.2 3.2 - k -.3 -.3 : • V i l l a r ir; ,;7*4- r = i 3 Li_:_ i_ xJL i— i— i_i—
|
OCR Scan
|
KS57C261B
KS57C2616
KS57C261G
c2616
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Alle Reriile vorbehalten/ d ll rig h ts reserved 1 | 3 2 k 5 6 39,8 29,2 E CD cn cvi CD E CO Si \ \ A ll O iie n sin n s in • l ic h l lo le r ie r le Masse/ free site le le tm e s lechn. [h a ra c le r. O rig in a l Size OIN A A Dal. D e ta il. la ie 1 6 .1 2 .0 4
|
OCR Scan
|
20Mod-F-
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Alle Reriile vorbehalten/ 2 3 A ll rights reserved 1 5 k U.6 6 U,6 co I A ll O iie n sio n s in • l ic h l lo le r ie r le Masse/ free size te le rm e s lechn. [h a ra c le r. O rig in a l Size OIN A A Dal. D e ta il. 1 5.08 .05 Insp. 412372 1 6 .0 8 .0 6 Bor
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3 2 Alle Reriile vorbehalten/ 1 \ \ A ll O iie n sio n s in • A ll rights reserved 5 k lechn. [h a ra c le r. 6 l ic h l lo le r ie r le Masse/ fr e e s iz e t e l e r m e s O rig in a l Size OIN A A Dal. D e ta il. Insp. la ie 1 9 . 0 2 . 9 3 PENNER HERB
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Alle Reriile vorbehalten/ 3 2 A ll rights reserved 1 5 k 6 27 ln <x> r^ i ^SJ A ll O iie n sio n s in • lechn. [h a ra c le r. l ic h l lo le r ie r le Masse/ fr e e s iz e t e le r m e s O rig in a l Size OIN A A Dal. D e ta il. la ie H assslab/S a le 1 5 .0 8 .0 6 Bor
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FA C TS H E E T F-199 amtec 2mm STANDARD SOCKET S P E C IF IC A T IO N S Materials: In s u la to r M a te ria l: Black Liquid Crystal Polym er C o n ta c t M a te ria l: Phosphor B ronze O p e ra tin g T e m p R a n g e : -65°C to + 125°C P la tin g : Au ove r 5 0 ji” 1 ,27jim Ni
|
OCR Scan
|
F-199
27jim
1-800-SAMTEC-9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Alle Rechle vorbehallen/ 411 rights reserred 1 3 2 | 29.2 5 k 6 37,45 \\ A ll O iie n sin n s in • lechn. [h a ra c le r. l ic h l lo le r ie r le Masse/ f r e e s i t e I t l e r m e s O rig in a l Size OIN A A Dal. D e ta il. la ie H assslab/ S a l t Han 2 0 M o d -M -c
|
OCR Scan
|
20Mod-M-c
|
PDF
|
MG200H1AL1
Abstract: T-52-13-25
Text: TOSHIBA {DISCRETE/OPTOJ 5b 9097250 TOSHIBA DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTO N POWER MODULE)_ D E § TCHTSSG □□00237 5 f bt>C 08237 T-52-13-25 MG200H1AL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
|
OCR Scan
|
T-52-13-25
MG200H1AL1
MG200H1AL1
T-52-13-25
|
PDF
|
MG30G1BL2
Abstract: 40mR
Text: Sb T O S H I B A -CDISCRETE/OPTOl 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S O 5e>C 08207 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE)_ D0DÖ207 r- Ü MG30G1BL2 H G I H P O W E R SI-ITCHING A P P L I C A T I O N S . Unit in mm FEATURES:
|
OCR Scan
|
MG30G1BL2
MG30G1BL2
40mR
|
PDF
|
