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    IC T100 Search Results

    IC T100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC T100 Price and Stock

    The Kurtz Holding Gmbh & Co Beteiligungs Kg 1ICT1000A00A67

    ERSA I-CON TRACE
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    DigiKey 1ICT1000A00A67 Bag 5 1
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    TestEquity LLC 1ICT1000A00A67
    • 1 $625.73
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    • 100 $625.73
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    Smiths Interconnect ICT-100-F-5.5-G S/C

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    Mouser Electronics ICT-100-F-5.5-G S/C 12,808
    • 1 $1.6
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    • 100 $1.18
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    Smiths Interconnect ICT-100-HK-6.7-G S/C

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    Mouser Electronics ICT-100-HK-6.7-G S/C 3,441
    • 1 $2.59
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    Smiths Interconnect ICT-100-A-5.5-G S/C

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    Mouser Electronics ICT-100-A-5.5-G S/C 3,407
    • 1 $1.77
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    Smiths Interconnect ICT-100-SP-10-G-S S/C

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    Mouser Electronics ICT-100-SP-10-G-S S/C 2,302
    • 1 $2.22
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    • 100 $1.82
    • 1000 $1.56
    • 10000 $1.46
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    IC T100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CXD1255Q

    Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
    Text: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video


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    DE91Z22-HP CXD1255Q cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024 PDF

    cmos sensor

    Abstract: 8 PIN CMOS sensor pin diagram T100 6 pin ic T100 T100
    Text: CMOS Sensor Inc T100 CMOS temperature sensor IC GENERAL DESCRIPTION The T100 is a high precision CMOS temperature IC. The output voltage is very linear for the temperature changes. It consists of a temperature sensor, a constant current source and an extra low current operational amplifier. The T100 can


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    la71750

    Abstract: la71750em
    Text: Ordering number : EN7952A Monolithic Linear IC LA71750EM For VHS VCR Video Audio Signal Processor Y/C/A/HA/CCD Overview The LA71750EM is a video signal-processing system IC that supports the PAL (G, B and I) 4.43 NTSC, MESECAM, and NAP (G, B, and I) formats for VHS VCRs. Chip internal trimming is used to make this IC fully adjustment free.


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    EN7952A LA71750EM LA71750EM la71750 PDF

    LA71750

    Abstract: 2sc331 transistor t87a 2SC331 equivalent datasheet diode t87a diode T87A diode T74A LA71750EM 2SC331 bit 3252a
    Text: Ordering number : EN7952A Monolithic Linear IC LA71750EM For VHS VCR Video Audio Signal Processor Y/C/A/HA/CCD Overview The LA71750EM is a video signal-processing system IC that supports the PAL (G, B and I) 4.43 NTSC, MESECAM, and NAP (G, B, and I) formats for VHS VCRs. Chip internal trimming is used to make this IC fully adjustment free.


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    EN7952A LA71750EM LA71750EM LA71750 2sc331 transistor t87a 2SC331 equivalent datasheet diode t87a diode T87A diode T74A 2SC331 bit 3252a PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


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    2SA2071 200mV 2SC5824 R1120A 2SA2071 2SC5824 T100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


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    2SA2071 200mV 2SC5824 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.


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    2SA2071 200mV 2SC5824 R1120A PDF

    dcf77 ferrite antenna

    Abstract: dcf77 AM RECEIVER ferrite antenna MAS6181 dcf77 DA6181B MAS6181B MAS6181B1UC06 KDS Crystals 77,5 AN-T702Lxx
    Text: DA6181B.001 18 November, 2010 MAS6181B AM Receiver IC * * * * * * * Dual Band Receiver IC High Sensitivity Very Low Power Consumption Wide Supply Voltage Range Power Down Control Control for AGC On High Selectivity by Crystal Filter Fast Startup Feature DESCRIPTION


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    DA6181B MAS6181B MAS6181 dcf77 ferrite antenna dcf77 AM RECEIVER ferrite antenna dcf77 MAS6181B MAS6181B1UC06 KDS Crystals 77,5 AN-T702Lxx PDF

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


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    2SC5824 200mV 200mA) 2SA2071. R1120A PDF

    2SA2071

    Abstract: 2SC5824 T100 60V transistor npn 2a switching applications
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


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    2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100 60V transistor npn 2a switching applications PDF

    MARKING CODE 15

    Abstract: 2SA1759 2SC4505 T100
    Text: 2SC4505 Transistors Power Transistor 400V, 0.1A 2SC4505 zDimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA.


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    2SC4505 100mA. 2SC4505 2SA1759. MARKING CODE 15 2SA1759 T100 PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


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    2SC5824 200mV 200mA) 2SA2071. R1120A 2SA2071 2SC5824 T100 PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A) 3) Strong discharge power for inductive load and


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    2SA2071 -200mV 2SC5824 2SA2071 2SC5824 T100 PDF

    2SC5824

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071.


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    2SC5824 200mV 200mA) 2SA2071. R1120A 2SC5824 PDF

    2scr375

    Abstract: No abstract text available
    Text: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)


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    2SCR375P SC-62) OT-89> 800mA/80mA) R1102A 2scr375 PDF

    ir 847p

    Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn
    Text: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA |xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)


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    U6083B

    Abstract: transistor 81 110 w a4
    Text: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for use in the brightness con­


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    u6083b U6083B D-74025 14-Feb-97 transistor 81 110 w a4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness


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    U6083B U6083B D-74025 03-Dec-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness


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    U6083B U6083B D-74025 21-Apr-99 PDF

    U6084B

    Abstract: U6084B-FP VT100
    Text: Tem ic U6084B S e m i c o n d u c t o r s PWM Power Control with Automatic Duty Cycle Reduction Description The U6084B is a bipolar technology PWM-IC designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness


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    u6084b U6084B D-74025 14-Feb-97 U6084B-FP VT100 PDF

    by 028

    Abstract: No abstract text available
    Text: Tem ic U6084B S e m i c o n d u c t o r s PWM Power Control with Automatic Duty-Cycle Reduction Description The U6084B is a PWM-IC in bipolar technology designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for the use in


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    U6084B U6084B D-74025 03-Dec-97 by 028 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty-Cycle Switch Off Description The U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for the use in the brightness


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    U6081B U6081B D-74025 03-Dec-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty-Cycle Switch Off Description The U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for the use in the brightness


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    U6081B U6081B D-74025 21-Apr-99 PDF

    U6081B

    Abstract: VT100 v726
    Text: Tem ic U6081B S e m i c o n d u c t o r s PWM Power Control with Low Duty Cycle Switch Off Description U6081B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for the use in the brightness


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    u6081b U6081B D-74025 14-Feb-97 VT100 v726 PDF