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    IC NEC 555 Search Results

    IC NEC 555 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC NEC 555 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gps frequency synthesizer

    Abstract: 44-PIN UPB1009K VP215 ic 565 application frequency synthesizer
    Text: NEC’s LOW POWER GPS RF RECEIVER BIPOLAR ANALOG + INTEGRATED CIRCUIT UPB1009K DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF filter, 4-bit ADC, and digital control interface to reduce cost and mounting space. In addition, its power consumption


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    PDF UPB1009K PB1009K Hz/16 HS350 gps frequency synthesizer 44-PIN UPB1009K VP215 ic 565 application frequency synthesizer

    NEC 421000

    Abstract: PD421000 NEC IC D 553 C
    Text: NEC //P D 4 2 1 0 0 0 1 ,0 4 8 ,5 7 6 x 1 -B IT D YN A M IC CMOS RAM NEC Electronics Inc. Description The//PD421000 is a fast-page, 1,048,576-word by 1-bit dynam ic CMOS RAM designed to operate from a single + 5 -vo lt power supply. The device is fabricated with


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    PDF uPD421000 576-word //PD421000 NEC 421000 PD421000 NEC IC D 553 C

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. //PD411001 1 ,0 4 8 ,5 7 6 X 1-BIT DYNAMIC NMOS RAM PRELIMINARY INFORMATION Description Pin Configurations The/¿PD411001 is a nibble mode version 1,048,576word by 1-bit dynam ic N-channel MOS random access memory RAM . It is designed to operate from a single


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    PDF uPD411001 576word /nPD411001 3-001659A //PD411001 HPD411001

    554 CA3

    Abstract: UPD411001-10 nas 1921
    Text: NEC //P D 411001 1 ,0 4 8 ,5 7 6 x 1-BIT D Y N A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION D escrip tio n Pin C o n fig u ra tio n s The /¿PD411001 is a nibble mode version 1,048,576word by 1-bit dynamic N-channel M O S random access


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    PDF uPD411001 576word /L/PD411001 /PD411001 83-003366B //PD411001 554 CA3 UPD411001-10 nas 1921

    unitrode Applications Note U-96

    Abstract: UC3642 UNITRODE applications handbook uc3842 -96 U-101 unitrode unitrode Application Note U-96 forward converter uc3844 500w 500W boost converter uc3843 UC3843 application note buck UC3843 in isolated flyback converter UC3843 application note soft start
    Text: APPLICATION NOTE U-100A THE UC3842/3/4/5 SERIES OF CURRENT-MODE PWM IC’S DESCRIPTION FEATURES The UC1842/3/4/5 family of control ICs provides the nec­ essary features to implement off-line or DC to DC fixed frequency current mode control schemes with a minimal


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    PDF U-100A UC3842/3/4/5 UC1842/3/4/5 UC3642, UC3706, UC3901 U-101 unitrode Applications Note U-96 UC3642 UNITRODE applications handbook uc3842 -96 U-101 unitrode unitrode Application Note U-96 forward converter uc3844 500w 500W boost converter uc3843 UC3843 application note buck UC3843 in isolated flyback converter UC3843 application note soft start

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M BIT DYNAMIC RAM 4M-W ORD BY 16-BIT, FAST PAGE MODE Description The /iPD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.


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    PDF PD4264160, 16-BIT, /iPD4264160, 50-pin 265160-A 264160-A S50G5-80-7JF3

    PC7915H

    Abstract: PC7905H UPC7908 UC7900 nec pc7912
    Text: NEC NEC Electronics Inc. D e s c r ip t io n /¿PC7900 S E R IE S T H R E E -T E R M IN A L 1.0 A N EG A TIV E V O LTA G E R E G U L A T O R S P in C o n fig u ra tio n T he //PC7900 series o f three te rm in a l reg u la to rs are m o n o lith ic negative voltage re g u la to rs w h ich feature


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    PDF uPC7900 PC7900 /JPC7905H PC7915H PC7905H UPC7908 UC7900 nec pc7912

    PC7905H

    Abstract: PC7905
    Text: NEC N E C Electronics Inc. D escrip tion /jPC7900 SERIES THREE-TERMINAL 1.0 A NEGATIVE VOLTAGE REGULATORS Pin C o n fig u ra tio n T he //PC7900 series o f three te rm in a l reg u la to rs are m o n o lith ic negative voltage reg u la to rs w h ich feature


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    PDF /PC7900 //PC7900 PC7905 PC7905H

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC / M O S INTEGRATED CIRCUIT / /¿P P 4 2 6 44 0 0 , 4 2 6 5 4 0 0 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escrip tio n The iiPD4264400, 4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAM s. The fast page mode


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    PDF iiPD4264400, 32-pin pPD4264400-A50 P32LE-400A 016to b4275Z5

    42-10A

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 4 2 1 0 A , 4 2 4 2 1 0 A 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description ThepPD 42S4210A , 424210 A are 262 144 w ords by 16 bits dynam ic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, 42S4210A /iPD42S4210A, 24210A 44-pin 40-pin 42S4210A-50, b427525 /tPD42S4210A, 42-10A

    Untitled

    Abstract: No abstract text available
    Text: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features


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    PDF bM2752S 0034G34 42S16160 42S17160 42S18160 4217/42S17, WD-747W jjPD421 160/L, 160/L

    uPD5101

    Abstract: U2 A 01
    Text: SEC ,liPD555 NEC Microcom puters, Inc. EVACH IP-42 DESCRIPTION T h e / ¿P D 5 5 5 is a syste m evaluation ch ip designed to su p p o rt b oth hardw are and softw are deb u ggin g of the iiC O M - 4 2 m P D 5 4 8 one-chip m ic ro c o m p u te r system .


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    PDF uPD555 EVACHIP-42 /LiPD548 yuPD555 pPD555D SP555-9-78-GN-CAT uPD5101 U2 A 01

    Untitled

    Abstract: No abstract text available
    Text: NEC Data Sheet M O S IN TEG R A TED C IR C U IT juP D 78323 A , 7 8 3 2 4 (A ) 16/8-B IT SING LE-C H IP M IC R O C O M P U TE R Description The /xPD78324(A) is a 16/8-bit single-chip microcomputerthat incorporates a high-performance 16-bit CPU. The /iPD78324(A) is one of 78K/III series. The internal capacity


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    PDF 16/8-B /xPD78324 16/8-bit 16-bit /iPD78324 78K/III PD78322 ThepPD78324 32K-byte 1024-byte

    PD5555G

    Abstract: upd5555 nec 555c mos D5555
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUI ¿¿PD555Î CMOS TIMER CIRCUIT T h e /iP D 5 5 5 5 is a C M O S version of th e /iP C 6 1 7/1555 tim e r IC. Being a C M O S circuit, the uP D 555 5 circuit requires o nly a little curre nt, and ou tp e rfo rm s th e bip o la r vers io n in ch a ra c te ris tic s such as ope ra tin g voltage, reset pin function,


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    PDF uPD555 PD5555C PD5555G upd5555 nec 555c mos D5555

    UPA79C

    Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
    Text: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ


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    PDF uPA79C PA79C UPA79C PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE D escription T h e M C -4 2 S 2 0 0 0 L A B 3 2 S series is a 2 ,0 9 7 ,1 5 2 w o rd s by 3 2 bits d y n a m ic R A M m o d u le (S m a ll O u tlin e D IM M )


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    PDF MC-42S2000LAB32S 32-BIT b427525 72PIN 1111111111111111111111111111111111ITT M72S-50A1-2

    NDL5004

    Abstract: No abstract text available
    Text: 30E D NEC • ti427S2 S 002^230 b ■ S ' Q ' 0 *7 ELECTRONICS INC LASER DIODE J N D L5 00 4 1 3 0 0 nm OPTICAL FIBER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC R IPTIO N N D L 5 0 0 4 is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DCPBH Double Channel Planar Buried Heterostructure can achieve stable fundamental oscillation in wide temperature range.


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    PDF L5004 NDL5004

    mpd5555

    Abstract: upd5555 PD5555 PD5555G 5555G cito RF mpd555
    Text: NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ;uPD5555 C M O S T IM E R Description T he ¿1PD5555 is a CMOS RC tim e r pro v id in g s ig n ific a n tly im proved perform ance over the standard b ip o la r 555 tim e r, w h ile a t the same tim e being d ire c t replacem ent fo r th a t device in m ost applications. Im proved parameters


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    PDF uPD5555 1PD5555 juPD5555 PD5555 IC--1994 1987P b427525 007QSS4 mpd5555 PD5555 PD5555G 5555G cito RF mpd555

    PD5555

    Abstract: UPD5555 PD5555C 5555G UPD5555 equivalent
    Text: NEC M OS INTEGRATED C IR C U IT EŒCTRON DEVICE /¿PD5555 C M O S T IM E R Description The /¿PD5555 is a CMOS RC timer providing significantly improved performance over the standard bipolar 555 timer, while at the same time being direct replacement for that device in most applications. Improved parameters


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    PDF uPD5555 pPD555S //PD5555 -50-225B PD5555 PD5555C 5555G UPD5555 equivalent

    transistor NEC D 882 p

    Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •


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    PDF 2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT uPD29F008L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE Description The //PD29F008L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration. It possesses an autom atic single Byte program function and an automatic block erase function that


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    PDF uPD29F008L //PD29F008L 608bit PD29F008L

    TI 9023 IC data

    Abstract: 2SC4226 APPLICATION NOTES
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS


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    PDF uPA810T 2SC4226) /xPA81 TI 9023 IC data 2SC4226 APPLICATION NOTES

    B581C

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR DIGITAL INTEGRATED CIRCUIT ¿xPB1508GV 3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS /¿PB1508GV is a 3.0 GHz input divide by 2 prescaler IC for DBS tuner applications. ¿¿PB1508GV can make VHF/UHF band PLL frequency synthesizer apply to DBS/ECS tuners. /iPB1508G V is a shrink package version of


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    PDF uPB1508GV PB1508GV /iPB1508G PB584G B581C

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


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    PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking