RS562
Abstract: RS-562 cd4000 cmos
Text: ISL8563E Data Sheet February 2004 +/-15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, EIA/TIA-562, EIA/TIA-232 Transmitters/Receivers Features • ESD Protection for RS-562 I/O Pins to ±15kV IEC61000 The Intersil ISL8563E contains 3.0V to 5.5V powered
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ISL8563E
FN6002
/-15kV
250kbps,
EIA/TIA-562,
EIA/TIA-232
ISL8563E
ElA/TIA-562
ElA/TIA-232
IEC61000-4-2
RS562
RS-562
cd4000 cmos
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RS562
Abstract: RS-562 AN9863 ISL8563E MAX563
Text: ISL8563E Data Sheet July 2004 +/-15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, EIA/TIA-562, EIA/TIA-232 Transmitters/Receivers Features • ESD Protection for RS-562 I/O Pins to ±15kV IEC61000 The Intersil ISL8563E contains 3.0V to 5.5V powered
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ISL8563E
/-15kV
250kbps,
EIA/TIA-562,
EIA/TIA-232
RS-562
IEC61000)
ISL8563E
ElA/TIA-562
ElA/TIA-232
RS562
AN9863
MAX563
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RS562
Abstract: RS-562 AN9863 IEC1000 ISL8563E MAX563 TB363
Text: ISL8563E TM Data Sheet March 2001 +/-15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, EIA/TIA-562, EIA/TIA-232 Transmitters/Receivers • ESD Protection for RS-562 I/O Pins to ±15kV IEC1000 This product features an improved charge pump which delivers ±5V transmitter supplies, allowing the use of the
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ISL8563E
/-15kV
250kbps,
EIA/TIA-562,
EIA/TIA-232
RS-562
IEC1000)
ISL8563E
RS-232
RS562
AN9863
IEC1000
MAX563
TB363
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pin diagram of RS 485
Abstract: ISL3331 pin diagram of max 485 WITH 9 PIN CONNECTOR RS-485 ISL3330 ISL3330IAZ
Text: ISL3330, ISL3331 Data Sheet May 20, 2008 3.3V, ±15kV ESD Protected, Dual Protocol RS-232/RS-485 Transceivers These devices are BiCMOS interface ICs that are user configured as either a single RS-422/RS-485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.
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ISL3330,
ISL3331
RS-232/RS-485)
RS-422/RS-485
RS-232
FN6361
RS-485/RS-422
RS-485/RS-422
pin diagram of RS 485
ISL3331
pin diagram of max 485 WITH 9 PIN CONNECTOR
RS-485
ISL3330
ISL3330IAZ
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Untitled
Abstract: No abstract text available
Text: ISL3330, ISL3331 Data Sheet May 20, 2008 3.3V, ±15kV ESD Protected, Dual Protocol RS-232/RS-485 Transceivers These devices are BiCMOS interface ICs that are user configured as either a single RS-422/RS-485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.
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ISL3330,
ISL3331
RS-232/RS-485)
RS-422/RS-485
RS-232
FN6361
RS-485/RS-422
RS-485/RS-422
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intersil PART MARKING ISL81387IAZ
Abstract: ISL41387 ISL81387
Text: ISL81387, ISL41387 Data Sheet December 20, 2005 ±15kV ESD Protected, Dual Protocol RS-232/RS-485 Transceivers FN6201.1 Features These devices are BiCMOS interface ICs that are user configured as either a single RS-422/485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.
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ISL81387,
ISL41387
RS-232/RS-485)
FN6201
RS-422/485
RS-232
RS-485
intersil PART MARKING ISL81387IAZ
ISL41387
ISL81387
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81387IAZ
Abstract: ISL81387 ISL41334 ISL41387 ISL81334 IRZ 46
Text: ISL81387, ISL41387 Data Sheet November 21, 2007 ±15kV ESD Protected, 5V, Dual Protocol RS-232/RS-485 Transceivers These devices are BiCMOS interface ICs that are user configured as either a single RS-422, RS-485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.
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ISL81387,
ISL41387
RS-232/RS-485)
RS-422,
RS-485
RS-232
81387IAZ
ISL81387
ISL41334
ISL41387
ISL81334
IRZ 46
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ISL81387IBZ
Abstract: 81387IAZ ISL41387EVAL1 ICC232
Text: ISL81387, ISL41387 Data Sheet December 1, 2005 ±15kV ESD Protected, Dual Protocol RS-232/RS-485 Transceivers FN6201.0 Features These devices are BiCMOS interface ICs that are user configured as either a single RS-422/485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.
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ISL81387,
ISL41387
FN6201
RS-232/RS-485)
RS-232
RS-485/422
RS-485)
ISL81387IBZ
81387IAZ
ISL41387EVAL1
ICC232
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Untitled
Abstract: No abstract text available
Text: ISL81387, ISL41387 Data Sheet November 21, 2007 ±15kV ESD Protected, 5V, Dual Protocol RS-232/RS-485 Transceivers These devices are BiCMOS interface ICs that are user configured as either a single RS-422, RS-485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.
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ISL81387,
ISL41387
RS-232/RS-485)
RS-422,
RS-485
RS-232
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Untitled
Abstract: No abstract text available
Text: ISL81387, ISL41387 Data Sheet May 31, 2007 ±15kV ESD Protected, 5V, Dual Protocol RS-232/RS-485 Transceivers These devices are BiCMOS interface ICs that are user configured as either a single RS-422/485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.
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ISL81387,
ISL41387
FN6201
RS-232/RS-485)
RS-422/485
RS-232
RS-485
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cellular phone amplifier power control transistor
Abstract: ECM011 PAE1
Text: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency
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ECM011
28dBm
16dBm
ECM011
824MHz
849MHz
849MHz,
824MHz,
836MHz,
cellular phone amplifier power control transistor
PAE1
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L7667
Abstract: L7667mja IH5048
Text: Not Recommended for New Designs This product was manufactured for Maxim by an outside wafer foundry using a process that is no longer available. It is not recommended for new designs. The data sheet remains available for existing users. A Maxim replacement or an industry second-source may be available.
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REF02A
/883B
REF02
/883B
Mil-Std-1835
REF02J/883B
REF02Z/883B
426MJA/883B
L7667
L7667mja
IH5048
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Designs This product was manufactured for Maxim by an outside wafer foundry using a process that is no longer available. It is not recommended for new designs. The data sheet remains available for existing users. A Maxim replacement or an industry second-source may be available.
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REF01A
/883B
REF01
/883B
Mil-Std-1835
REF02J/883B
REF02
REF02Z/883B
426MJA/883B
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MCH185A101JK
Abstract: ECM011 capacitor 6032
Text: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency
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ECM011
28dBm
16dBm
ECM011
824MHz
849MHz
AP-000513-000
AP-000516-000
SS-000398-000
MCH185A101JK
capacitor 6032
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cdi schematics pcb
Abstract: dc cdi schematic diagram cdi schematic HBT transistor ECM011 MCH185A101JK PAE1 ecshi
Text: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency
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ECM011
28dBm
16dBm
ECM011
824MHz
849MHz
AP-000513-000
AP-000516-000
SS-000398-000
cdi schematics pcb
dc cdi schematic diagram
cdi schematic
HBT transistor
MCH185A101JK
PAE1
ecshi
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MS-013-AB
Abstract: MAX56
Text: ISL8563 Data Sheet July 2002 +3V to +5.5V, 1Microamp, 250kbps, EIA/TIA-562, EIA/TIA-232 Transmitters/Receivers Features • ±15kV ESD Protected Human Body Model The Intersil ISL8563 contains 3.0V to 5.5V powered transmitters/receivers which meet ElA/TIA-562 and
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ISL8563
FN6005
250kbps,
EIA/TIA-562,
EIA/TIA-232
ISL8563
ElA/TIA-562
ElA/TIA-232
250kbps
MS-013-AB
MAX56
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transistor d400 e 1b
Abstract: SOT1211-1 J1889 j2976 nxp power microwave transistor C403 3RD IF
Text: BLM7G22S-60PB; BLM7G22S-60PBG LDMOS 2-stage power MMIC Rev. 1 — 11 December 2012 Product data sheet 1. Product profile 1.1 General description The BLM7G22S-60PB G is a dual path, 2-stage power MMIC using NXP’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the
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BLM7G22S-60PB;
BLM7G22S-60PBG
BLM7G22S-60PB
7G22S-60PBG
transistor d400 e 1b
SOT1211-1
J1889
j2976
nxp power microwave transistor
C403 3RD IF
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Untitled
Abstract: No abstract text available
Text: HIN14C89E Data Sheet PRELIMINARY January 1999 File Number Low Power Quad RS-232 Receiver Features The HIN14C89E is a high-ESD tolerant, very low power, • Pin-Compatible ESD Upgrade for “1489” Socket [ /Title quad RS-232 receiver interface circuit that is designed to
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HIN14C89E
RS-232
EIA/TIA-232,
EIA/TIA-562,
4C89E
240Kbps.
HIN14C89ECP
HIN14C89ECBN
/KeyHIN14C89E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE Features Features Korea PCS CDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28.0 dBm CDMA Power 35% CDMA Efficiency Power-down Capability Quiescent Current Control Wide Range Vref/pd
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ECM018
ECM018
1750MHz
1780MHz
AP-000513-000
AP-000516-000
SS-000446-000
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AN9863
Abstract: ISL8563 ISL8563E MAX563 TB363 jedec ms-013 ab
Text: ISL8563 TM Data Sheet tle 85 jec V V, cro , kb /TI 62, /TI 32 s ers ei tho w rsi por n, ico cto V March 2001 File Number +3V to +5.5V, 1Microamp, 250kbps, EIA/TIA-562, EIA/TIA-232 Transmitters/Receivers Features The Intersil ISL8563 contains 3.0V to 5.5V powered
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ISL8563
250kbps,
EIA/TIA-562,
EIA/TIA-232
ISL8563
ElA/TIA-562
ElA/TIA-232
AN9863
ISL8563E
MAX563
TB363
jedec ms-013 ab
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
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2SC3603
2SC3603
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EP1800I
Abstract: 8946801XC epm5130 epx780 EPX740 EP224 Altera EP1800i
Text: Component Selection Guide March 1995, ver. 2 Introduction Data Sheet This selection guide lists devices available from Altera: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FLEX 10K devices FLEX 8000 devices Configuration EPROM devices MAX 9000 devices
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7000S
EP1800I
8946801XC
epm5130
epx780
EPX740
EP224
Altera EP1800i
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2SC3603
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
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2SC3603
2SC3603
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •
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2SC5015
2SC5015-T1
2SC5015-T2
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