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    IC HM 392 - 110 Search Results

    IC HM 392 - 110 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC HM 392 - 110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PT1000 CONVERSION TABLE

    Abstract: ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24
    Text: Table of Contents RF Inductors Surface Mount Radial Leaded Series EMI Series 4221 Series 4222 Series 8454 Series SMB 2.5 107 108 109 110 111 112 113 114 115 Surface Mount Series P1330 Series P1812 Series 2512 Series 3483 Series S3483 Series SDS130 Series SDS680


    Original     		PDF P1330 P1812 S3483 SDS130 SDS680 SDS850 CMT4545 FW1405 SPD62 SPD42R PT1000 CONVERSION TABLE ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24

    ic HM 392 - 110

    Abstract: vitrohm 412 101 R15 N 470 KP
    Text: Vorzugswerte nach DIN/IEC 63: E6 E 12 E 24 E6 E 12 1.0 1.0 1.0 1.1 1.2 1.3 1.5 1.6 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.3 1.2 1.5 1.5 1.8 2.2 2 .2 2.7 E 48 E 96 E 192 E 48 E 96 100 100 100 162 162 101 102 105 102 105 165 169 169 174 109 110 110 110 178 115 115 182


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    Untitled

    Abstract: No abstract text available
    Text: HM S £ M IG % ÏË Ê M 140 Com merce Drive S S Ä r ,8M5-1013 T C C 2 2 2 3 - 3 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS * SREQUKNOY * POWER OUT 2 2 2 3 GHJ: 3.0W % * ~ « ^OVVER GAIN * voltage: ov * HERMETIC f-'ACtvAGii . -\LL GOLD METALLIZED SYSTEM


    OCR Scan     		PDF 8M5-1013 TCX2223-3 TCC2223-3'

    CDR21BP

    Abstract: 700B TT 2142 MIL-C-55681 CDR14 CDR21 CDR13BP S7B marking code AMERICAN TECHNICAL CERAMICS
    Text: -O S '' o s -o ATC 700 B Series NPO Porcelain and Ceramic Multilayer Capacitors Case B Size .110" x .110") • Capacitance Range 0.1 pF to 5100 pF Low ESR/ESL • Zero T.C. Low Noise • High Self-Resonance Rugged Construction • Established Reliability (QPL)


    OCR Scan     		PDF Il746-2142 773M0C1 DDD1173 CDR21BP 700B TT 2142 MIL-C-55681 CDR14 CDR21 CDR13BP S7B marking code AMERICAN TECHNICAL CERAMICS

    Untitled

    Abstract: No abstract text available
    Text: SlNIILE-IJI-LI N 2.41 .095 L o w Profile C o n fo rm a l N e t w o r k s CT S exiterhse n re sistc iBtvvo'k technology is avahable in saace-saving conformal networks. • High rel ab i ty cermet resistors • Space saving over rrl vicinal res stars • A va, la hie in odd cr even w. r’ ber of Dins


    OCR Scan     		PDF 220U/3301!

    royal ohm chip resistor 1206

    Abstract: Royal OHM royal ohm chip resistor 0805 RMC0603 RMC0805 hpwgf 0805W8 royal ohm chip resistor Marking code AHm royal ohm chip resistor 0603
    Text: ROYAL OHM SPECIFICATION FOR APPROVAL FARNELL ELECTRONIC COMPONENTS. Description :_ Chip Resistors HJW8 xxxxxT xa RMC 1/8 W 1206 +/- 1% & 5% HM W AxxxxxTxx RMC 1/10 W (0805) +/- 1% & 5% Part no. HPW GxxxxxTxx RM C 1/16 W (0603) +/- 1% & 5% Approved by


    OCR Scan     		PDF -226K, 000PCS. T/R-5000 1/10W 1/16W T/R-5000 HJW8D3300Ã HMWAB0330T5C HPWGF3300T50 royal ohm chip resistor 1206 Royal OHM royal ohm chip resistor 0805 RMC0603 RMC0805 hpwgf 0805W8 royal ohm chip resistor Marking code AHm royal ohm chip resistor 0603

    490.2159

    Abstract: Kombinat VEB Elektronische Bauelemente VEB Kombinat 49004 veb taschenbuch Kombinat VEB asterm Bauelementeinformation VEB M ik ro e le k tro n ik bauelemente Kombinat
    Text: Widerstände Kombinat VEB Elektronische Bauelemente W ID E R S T Ä N D E In h a lt Feste S ch ic h tw id e rstä n d e Seite 6 V e r ä n d e rb a re S ch ich tw id e rstä n d e 50 Ein ste ilre g ier Kohleschicht Ein ste ilre g ler (Cerm etschicht) Potentiometer


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    514265C

    Abstract: No abstract text available
    Text: HM514265C Series Preliminary 2 6 2 ,1 4 4 -w o rd : 1 6 -b it D y n a m ic R a n d o m A c c e s s M e m o ry HITACHI The Hitachi H M 5 I 4 2 6 M ' is a C M O S dyn ami c R A M o r g a n i z e d 2 6 2 , 1 4 4 w or ds x 16 hits. HM 5 1426.‘> ’ has realized higher density, higher


    OCR Scan     		PDF HM514265C HM5I4265C 400-mil 40-pin HM514265CJ-6 HM514265CJ-7 HM514265CJ-8 514265C

    eia SE-101-A

    Abstract: No abstract text available
    Text: Thick Film Chip Resistors NRC Series FEATURES • EIA STANDARD SIZING 0201 1/20W , 0402(1/16W ), 0603(1/10W ), 0805(1/8W ) 1206(1/4W ), 1210(1/3W ), 2010(3/4W ) AND 2512(1W ) • METAL G LAZED THICK FILM ON HIGH PURITY ALUM INA SUBSTRATE (CERM ET) PROVIDES UNIFORM Q UALITY AND HIGH RELIABILITY


    OCR Scan     		PDF 1/20W 1/16W 1/10W sist10 10meg 10Oohms 10ohms 115Kohms eia SE-101-A

    LB203 DC

    Abstract: No abstract text available
    Text: SIE D • MM1bEÜ3 0018701 TEO ■ HIT2 HM514410 Serie HITACHI/ logic/ arrays/ mem _ Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory ■ DESCRIPTION H M 514410JP Series The Hitachi HM514410 is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514410 has realized higher density, higher performance and various func­


    OCR Scan     		PDF HM514410 576-Word 514410JP 20-pin 514410Z LB203 DC

    rn73e

    Abstract: No abstract text available
    Text: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 A vailable S izes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power R atings - 0.1 O hm to 22 M eg O hm R e sistance R ange - T ight Tolerance and Low T C R A vailable


    OCR Scan     		PDF 120/yin/3 D17E1 rn73e

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2231 Field Effect Transistor U n i t in m m Silicon N Channel MOS Type L2-7c-MOS V High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications F e a tu r e s • 4V Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2231

    Untitled

    Abstract: No abstract text available
    Text: @TCRjEg 9BifIlf81£x(li£^BB3§ Low T C R Low O hm ic Thick Film Chip Fixed Resistor • Features i lOOmO -lOOOmO Resistance values from 100m to 1000m ohm i S i& T C R M ± 75ppm/‘C Lowest TCR from ±75ppm/°c Current detecting resistors for power supply, motor circuits, etc


    OCR Scan     		PDF 9BifIlf81Â 1000m 75ppm/â WPI98 -30X3,

    Untitled

    Abstract: No abstract text available
    Text: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 A vailable S izes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power R atings - 0.1 O hm to 22 M eg O hm R e sistance R ange - T ight Tolerance and Low T C R Available


    OCR Scan     		PDF 120/yin/3 D17E1

    Untitled

    Abstract: No abstract text available
    Text: HM514410 Series- Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM514410JP Series The Hitachi HM514410 is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514410 has realized higher density, higher performance and various func­


    OCR Scan     		PDF HM514410 576-Word HM514410JP 20-pin P-20D

    TM130EZ-H

    Abstract: TM130EZ-M TM90EZ-24 TM90EZ-2H Ut90
    Text: 296 HM — '¡ 7 . 9 • T M 9 0 E Z -24, m&m -2 H H £ Kl K2 A; * - M c -f—o- M— o o&m'f I1 2500V .- SH . •—O1' 9' O ■ «*$ « s;- TM90EZ-2H & m S1 'H & fi- tó'h & k tó I1 Vt>R\! /riKMSi /t s m I 2 -l 1600 1200 V hhm /riAvi 1700 1350


    OCR Scan     		PDF TM90EZ-24, TM90EZ-24 TM90EZ-2H H-101 TM130EZ-H TM130EZ-M TM90EZ-2H Ut90

    2N6218

    Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533
    Text: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39


    OCR Scan     		PDF 013bbS0 D0QD303 O-106 BC394 BC530 O-92A BC533 2N6218 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P

    cl 6562

    Abstract: No abstract text available
    Text: HARRIS HM-6562 S E M IC O N D U C T O R PRODUCTS DIVISION A DIVISION OF HARRIS CORPORATION 256 x 4 C M O S RA M NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Features Pinout LO W POWER S T A N D B Y LO W POWER O P E R A T IO N F A S T ACCESS T IM E D A T A R E T E N T IO N V O L T A G E


    OCR Scan     		PDF HM-6562 220nsec HM-6561 cl 6562

    HP83000

    Abstract: Electro SEX X81D1 HP8300 X41D ECL IC NAND
    Text: • 7 Ô1 1 D 7 3 O G lb a ^ O Tas B R K Iil Cyclone Series Cyclone Series GaAs Gate Arrays Rockwell Introduction The sub-micron Cyclone Series™ of GaAs gate arrays from Rockwell represent the culmination of over ten years of research and development.


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    Untitled

    Abstract: No abstract text available
    Text: r SECTION ^ , M IL -C -2 6 5 0 0 h s c s e r ie s sooooo 8 0 -0 . NUMBERING SYSTEM S 8 0000 12 — 3 P6 I. -STD. PLATING,SHELL-FUSED TIN, CONTACTS-GOLD; FOR STNL'SSTLSHELL-PASSIVATE - SPECIAL MODIFICATIONS •ALTERNATE INSERT POSITION NO NUMBER FOR NORMAL


    OCR Scan     		PDF -1/4-20A -1/2-20A

    hp 2800

    Abstract: 51C65H 51C65H-10 51C65H-12 51C65L-10 51C65L-12
    Text: 51C65H HIGH PERFORMANCE STATIC COLUMN 64K X 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) • Static Column Mode Operation 51C65H-10 51C65H-12 100 120 55 65 ■ Fast “ Usable Speed’’ — Continuous data rate over 15 MHz


    OCR Scan     		PDF 51C65H 51C65H-10 51C65H-12 5lC65H 536x1 51C65H hp 2800 51C65H-12 51C65L-10 51C65L-12

    EVK75-050

    Abstract: EVG31-050 EVK31-050 TAE 1102 2DI300A-050 H-17 H-18 H17133
    Text: 246 — I — N P N , iq g m v s m o Z Ë Î. S V ebo c > « > VcBO m ^ I CP (A (A ) AC, 15m > B I f (A ) (A ) T , tf Pc (a i) (W ) Total (W ) V i., (i£ 2 ) CC) CC) (V ) CBO (m A ) ft * Œ 3. # fcUtèVcio m ft EBO V cB (V ) (m A ) Ä (ic Ä m A ) ft


    OCR Scan     		PDF EVG31-050 EVK31-0 H-101 EVK75-050 EVK31-050 TAE 1102 2DI300A-050 H-17 H-18 H17133

    Untitled

    Abstract: No abstract text available
    Text: TYPE VPR Single-Ended FEATURES: • Low ESR • Long Life • Standoffs • Wide operating Temperatures 105°C The VPR capa citor m anufactured by Aero M is specifically designed for use in high freq uency sw itching pow er supplies w here low im pedance and low inductance characteristics are


    OCR Scan     		PDF VPR330M200J1C3A VPR560M200L1C3A VPR820M200N1C3A VPR151M200N1L3A VPR221M200N2C3A VPR331M200L3L3A VPR391M200N1L3A VPR471M200N3L3A VPR220M250J1C3A VPR470M250J1L3A

    HN462532G

    Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
    Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .


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