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    IC EB 729 Search Results

    IC EB 729 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    IC EB 729 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2EC!"38  4C6C#$%&'9 %  %


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    PDF 23456784539A6BCDEF 345674F 976BCDEF 92D3645 592D3645 428654F4 A6-62 CFC24 CFC26 9F36B1322

    RCDL56ACF

    Abstract: rcvdl56acfw RCVDL56ACF/SP schematic circuit board satellite modem data circuit schematics satellite connector 4 MHz crystal KDS 2K SDS Relay 30338 RCVDL56ACFW/SP KDS 28.224 MHZ crystal
    Text: RCVDL56ACF/SVD, RCV56ACF/SVD, and RCV336ACF/SVD Modems Designer's Guide Preliminary Order No. 1105 Rev. 1, March 6, 1997 RCVDL56ACF/SVD, RCV56ACF/SVD, and RCV336ACF/SVD Modem Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no


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    PDF RCVDL56ACF/SVD, RCV56ACF/SVD, RCV336ACF/SVD RCDL56ACF rcvdl56acfw RCVDL56ACF/SP schematic circuit board satellite modem data circuit schematics satellite connector 4 MHz crystal KDS 2K SDS Relay 30338 RCVDL56ACFW/SP KDS 28.224 MHZ crystal

    data circuit schematics satellite connector

    Abstract: 30338 RCDL56ACF HB 8406 rc336 WCLA SDS Relay r6765 LM386 BLOCK DIAGRAM kds 97 45
    Text: RCVDL56ACFL/SP, RCV56ACFL/SP, and RCV336ACFL/SP Modem Device Set Designer's Guide Preliminary Order No. 1121 May 15, 1997 RCVDL56ACFL/SP, RCV56ACFL/SP, and RCV336ACFL/SP Modem Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no


    Original
    PDF RCVDL56ACFL/SP, RCV56ACFL/SP, RCV336ACFL/SP data circuit schematics satellite connector 30338 RCDL56ACF HB 8406 rc336 WCLA SDS Relay r6765 LM386 BLOCK DIAGRAM kds 97 45

    CA3252

    Abstract: No abstract text available
    Text: CA3252 S E M I C O N D U C T O R Quad Gated Non-Inverting Power Driver March 1998 Features Description • Four 600mA Non-Inverting Power Output Drivers The CA3252 is used to interface low-level logic to high current loads. Each Power Driver has four inverting switches


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    PDF CA3252 CA3252 1-800-4-HARRIS

    130171

    Abstract: 292d 11-01-0122 20 Pin Molex Mini-Fit Jr J031 MOLEX 39-00-0038 j104 pin 21-130198-TAB D10116 39-00-0038
    Text: P R O P R IE T A R Y " D A TA : V A dM M D EB t REVISIONS tafSEnBUK DIZCtBlML ic f& ra L p d b T 'v t f l i o i p n r r f lir r f p n Dt lE S IC D B ECO REV DATE APPROVED 258 A PRODUCTION R EL EA SE 3/14/94 RBD 482 A1 CHG PIN 1 LOCATION ON J3 12/21/95 RBD


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    PDF f39-D1-2120. f39-D0-0CI39 18-24-AWD J10-1 J10-Z J10-3 J10-4 J10-5 J10-7 J10-10 130171 292d 11-01-0122 20 Pin Molex Mini-Fit Jr J031 MOLEX 39-00-0038 j104 pin 21-130198-TAB D10116 39-00-0038

    Westinghouse module

    Abstract: kd32 KD32451
    Text: 7294621 P OWEREX 100 Amperes 450 /1 000 Volts INC " bS DE-fl T E T M b S l a 0 D C H 3 0 D f D T-33-35 M odu,ls DARLINGTON Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150 + .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max 3.660+.020


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    PDF T-33-35 KD32451010 KD421K1010 KD32451010 Westinghouse module kd32 KD32451

    KS621K3010

    Abstract: powerex ks62 14B21
    Text: 7294621 POVIE REX IN C 7?^ ?1 □ D I]Q i:i l l ~ ~ Y Single Darlington TRANSISTO R Modules Dim A B C D E F G H J K L M N Inches 4.260 Max 3.660 ±.012 2.44 Max 1.89 ±.012 1.00 Max 1.42 Max 1.141 .827 .512 .354 .630 .256 .256 Dia 4 Millimeters 108 Max 93 ±0.3


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    PDF KS62453010 Fee010 KS62453010 KS621K3010 KS621K3010 powerex ks62 14B21

    D60T1520

    Abstract: D60T152010 D62T D62T1520 D62T152010 Scans-0014004 powerex to-200
    Text: ’POWEREX INC 7294621 POWEREX Tfl INC 98D f ^ W V E flE A DE |? ET 4 b a i DDOEbTl 7 02691 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 D D60T1520 D62T1520 Tentative NPN Power Switching Transistors 200 Amperes 150 Volts Features:


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    PDF D60T1520 D62T1520 D62T1520 Amperes/150 D60T/D62T1520 060T/D62T1520 D60T1520 D60T152010 D62T D62T152010 Scans-0014004 powerex to-200

    Thomson-CSF amplifier

    Abstract: CO-422 118-136-MHz
    Text: S G S-TH O M SO N Ü4C D | □ □ □ G IG I 7 - 3$ - *7 ? S O L ID STATE M IC R O W A V E S D 1 222-5 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • 215 362-8500 ■ TWX 510-661 -7299 V H F C O M M U N I C A T I O N S T R A N S IS T O R


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    PDF

    K723

    Abstract: KT234520 transistor 236 bipolar power transistor vce 600 volt
    Text: 7294621 POWEREX INC I O H E R E _ D E I 7 2 i MbSI 0D0SD3b fl D KT234520 K Powemi, Inc., Hlllla Street, ibungwood, Pennsylvania 15697 412 925-7272 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor


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    PDF 7-33-2T? KT234S20 KT234520 Amperes/600 15Dia. K723 transistor 236 bipolar power transistor vce 600 volt

    SD1301

    Abstract: THOMSON-CSF MICROWAVE TRANSISTORS
    Text: Q5C D I 7 ^ 2 3 7 S G S-THOM SON DGGGSOQ M |~ T W / - AT" SOLID STATE MICROWAVE SD1300 SD1301 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvilie, P A 18936 • 215 362-8500 ■ TWX 510-661-7299 NPN SMALL SIGNAL TRANSISTOR .357 .353 DESCRIPTION: This line o f NPN silicon transistors are designed primarily for applica­


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    PDF SD1300 SD1301 SD1301 THOMSON-CSF MICROWAVE TRANSISTORS

    westinghouse DIODES

    Abstract: WESTINGHOUSE dc motor 300 volt 5 ampere transistor Westinghouse diode westinghouse ac motor kd7245 KD724502 WESTINGHOUSE transistor westinghouse semiconductor
    Text: 7294621 POWEREX INC PE | 7BT4b5:L □ 0 □ 0 •=]15 4 Dual Darlington TRANSISTOR Modules Dim A B C D E F Q H J Inches. 2.76 1.06 2.36 ±0.01 2.17 1.02 .59 .43 .181 .315 |~~5 _ qf T-33-35 20 Amperes 450 Volts Millimeters 70 27 60±0.3 5.5 26 15 11 4.6 8


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    PDF T-33-35 KD72450210 D72450210 KD72450210 westinghouse DIODES WESTINGHOUSE dc motor 300 volt 5 ampere transistor Westinghouse diode westinghouse ac motor kd7245 KD724502 WESTINGHOUSE transistor westinghouse semiconductor

    10A 600 VOLT DIODE

    Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
    Text: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes


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    PDF 72T4b21 T-33-35 KE724S0110 T-33- KE72450110 10A 600 VOLT DIODE transistor 13a 600v westinghouse DIODES 827 d transistor KE72

    Westinghouse diode

    Abstract: Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324
    Text: 7294621 POWEREX INC T É? DE | 72T4L.21 0DQEHG7 5 | f Q A T-33-35 Single Darlington _ AmDeres TRANSISTOR í c n /i nnn 51i+o M odules Dim A B C D E F G H J K L N P Inches 3.740 Max 3.150 + .010 .90 M 5xM et 2.44 Max .59 .925 1.181 Max .83 .28 .236 .216 Dia 4


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    PDF 72T4L T-33-35 S32452010 KS32452010 KS621K2010 Westinghouse diode Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN1307RN1309 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 2.1 ± 0.1 I.25±0.1 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process


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    PDF RN1307RN1309 RN2307 RN1307 RN1308 RN1309 RN1307-RN1309 RN130

    t333b

    Abstract: ks52
    Text: f 7294621 POWEREX IÑ{~bg 30 Amperes 4 5 0 Volts DE~| DODQfi'ia 7 | ”jL D< T -3 3 -3 5 Single Darlington T R A N S IS T O R Module Dim A B C D E F G H J K L Inches 2.09 M ax 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± . 0 0 8 .216 Dia Millimeters 53 M ax


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    PDF KS52450310 T-33-35 S52450310 S52450310 t333b ks52

    Darlington 30A

    Abstract: KD221K0310 kd2245
    Text: 7294621 POWEREX INC 3 0 Amperes 4 5 0 /1 0 0 0 Volts ^2 D E Í 7 S T M b 2 1 D G D m i ñ 0 |~~ q \ T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+.020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 Millimeters 94 Max


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    PDF T-33-35 M5-10 KD224S0310 000CHE1 KD22450310 KD22450310 Darlington 30A KD221K0310 kd2245

    Untitled

    Abstract: No abstract text available
    Text: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier


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    PDF 2N2483 2N2484 10kJ2

    2SA984

    Abstract: 2SC2274 TRANSISTOR 2SA984 transistor 2sc2274 2SA984 sanyo 2SC2274-F TR 2SA984-F
    Text: Ordering number: EN465G 2SA984/2SC2274 N0.465G PNP/NPN Epitaxial Planar Silicon Transistors SAXYO AF Power Amp Applications Features • High breakdown voltage Vceo—50V . • High current (Ic = 500mA). • Low saturation voltage. ( ) : 2SA984 A bsolute Maximum R atings at T a = 25°C


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    PDF EN465G 2SA984/2SC2274 500mA) 2SA984 2034/2034A SC-43 7tlt17D7b 2SA984 2SC2274 TRANSISTOR 2SA984 transistor 2sc2274 2SA984 sanyo 2SC2274-F TR 2SA984-F

    Untitled

    Abstract: No abstract text available
    Text: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5


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    PDF T-33-2 KB72450210 KB72450 KB72450210

    R1SG

    Abstract: D60T454010 D62T454010 D60T4050 transistor 667 7A young D60T4040 D60T4060 D62T MLLB-1
    Text: 729 4 82 1 P Ô v r ë R E X - l M c ““ ^ mmuEx ' • ~D D60T/D62T_ 40 D60T/D62T_5Q D60T/D62T_ 60 ív' Powerex, Inc., H IIIÌ3 S treet, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching Transistors 40-50-60 Amperes 400-500Vòlts


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    PDF D60T/D62T_ Amperes/400-500 T-33-15 R1SG D60T454010 D62T454010 D60T4050 transistor 667 7A young D60T4040 D60T4060 D62T MLLB-1

    ks52

    Abstract: TNU 175 KS524505 A60e KS221K0510
    Text: 729* £ ? i PUW EREX IN C ~ ^ D lF | T S T M b Z l OOODÖTS 5 Single Darlington T R A N S IS T O R M odules Dim A B C D E F G H J K L Inches 2.09 Max 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± .0 0 8 .216 Dia Millimeters 53 Max 36 22 5.5 3 5 7 9 8 43.3 ± .2


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    PDF KS52450510 ks52 TNU 175 KS524505 A60e KS221K0510

    ge d44h11

    Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
    Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2


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    PDF D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d44h11 D44* general electric npn to-220 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8

    243P

    Abstract: No abstract text available
    Text: HARRIS S E M I C O N D U C T O R CD74FCT543T, CD74FCT544T, CD74FCT2543T Ê '* w ^ ' ,7 # '* w ' ^ ' ,7 Fast CMOS Latched Transceivers Decem ber 1996 Description Features • Advanced 0.8 micron CMOS Technology The d evices a re 8 -bit w id e non-inverting


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    PDF CD74FCT543T, CD74FCT544T, CD74FCT2543T CD74FCT2543T) 1-800-4-HARRIS 243P