Untitled
Abstract: No abstract text available
Text: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel
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MMBTA13
MMBTA14
MMBT6427
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D40C1
Abstract: D40C2 D40C3 D40C4 D40C5 D40C7 D40C8 D40K1 D40K2 D40K3
Text: Small Signal Darlington Transistors hFE Part No. and Polarity V CEO NPN @ V CE & IC Operating Temperature: -55 o C to 150oC fT VCE sat & VBE(sat) @ IC & IB @ V CE & IC IC PNP Package Min. Max. VCE IC Max. Max. IC IB Min. Outline (Max. in mm or inches) Typ.
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150oC
D40C1
D40C2
D40C3
D40C4
D40C1
D40C2
D40C3
D40C4
D40C5
D40C7
D40C8
D40K1
D40K2
D40K3
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.
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FMMT614
500mA
500mA,
100mA,
100mHz
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TRANSISTOR SOT23, Vbe 8V
Abstract: FMMT614 DSA003700
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.
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FMMT614
500mA
500mA,
100mA,
100mHz
TRANSISTOR SOT23, Vbe 8V
FMMT614
DSA003700
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2SD1796
Abstract: relay 12v 3a datasheet FM20
Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A
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2SD1796
2000min
60typ
150x150x2
50x50x2
2SD1796
relay 12v 3a datasheet
FM20
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LT 6724
Abstract: MPS6724 MPS6725
Text: M~6724 M~6725 ONE WAU NPN S!LICON DARLINGTON 1 AMPLIFIER TRANSISTORS . collector-Emitter Breakdown voltage — V BR CES= 40 Vdc (Min) @ Ic = 1.0 mAdc MPS6724 50 Vdc (Min) @ Ic = 1.0 mAdc MPS6725 o High Current CapabiliW, IC of 1.0 Amp. ‘,!kg ,!: :,$, ,.
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MPS6724
MPS6725
DS5823
LT 6724
MPS6724
MPS6725
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KST14
Abstract: KST63 BC516 equivalent KSP13 BCV27 KST13 MMBT6427 MMBTA13 MMBTA14 NZT7053
Text: Discrete Small Signal Darlington Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration PZTA14 30 30 10 1.2 20000 - 5 100 1.5 100 0.1 PZTA28 80 80 12 0.8 10000
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OT-223
PZTA14
PZTA28
NZT7053
PZTA64
OT-23
KST13
KST14
KSP64
KST14
KST63
BC516 equivalent
KSP13
BCV27
KST13
MMBT6427
MMBTA13
MMBTA14
NZT7053
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LB1274
Abstract: No abstract text available
Text: Ordering number:ENN535C Monolithic Digital IC LB1274 6-Unit, Darlington Transistor Array Overview Package Dimensions Circuit structure of this IC is a 6-unit Darlington transistor array with NPN transistors. The IC is ideal for driving printers, relays, and lamps. Protective diodes guard against negative inputs. Thus it has advantages when designing circuits
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ENN535C
LB1274
004A-DIP14TD
LB1274]
26max
18-digit
LB1274
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2SD2015
Abstract: FM20
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C
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2SD2015
120min
2000min
40typ
10max
O220F)
2SD2015
FM20
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2SD2439
Abstract: 2SB1588
Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2SD2439
2SB1588)
FM100
100max
150min
5000min
55typ
95typ
2SD2439
2SB1588
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2SD2439
Abstract: 2SB1588
Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2SD2439
2SB1588)
FM100
100max
150min
5000min
55typ
95typ
2SD2439
2SB1588
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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Untitled
Abstract: No abstract text available
Text: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80
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2N6050
2N6051
2N6052
2N6057
2N6058
2N6059
2N6282
2N6283
2N6284
2N6285
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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Untitled
Abstract: No abstract text available
Text: IR3500A DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500A Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system
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IR3500A
IR3500A
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ZTX705
Abstract: ZTX704 DSA003774
Text: ZTX704 ZTX705 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL ZTX704 MIN. ZTX705 MAX. MIN. 3K 3K 3K 2K UNIT CONDITIONS. MAX. IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition
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ZTX704
ZTX705
-10mA,
-100mA,
20MHz
100ms
ZTX705
ZTX704
DSA003774
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11n800
Abstract: thyrister speed control of 3 ph I M equivalent transistor bc 649 2d npn smd thermistor ntc 50k
Text: IR3500A DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500A Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system
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IR3500A
IR3500A
11n800
thyrister speed control of 3 ph I M
equivalent transistor bc 649
2d npn smd
thermistor ntc 50k
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EL 14v 4c
Abstract: IR3500 IR3505 VR11 VRD11 thyrister SCR PIN Bf b9 L5109
Text: IR3500A DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500A Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system
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IR3500A
IR3500A
EL 14v 4c
IR3500
IR3505
VR11
VRD11
thyrister SCR PIN
Bf b9
L5109
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TD5 THERMISTOR
Abstract: l5109 IR3500 IR3500MPBF IR3500MTRPBF IR3505 VR11 VRD11 thyrister SCR PIN 12v 5a dc dc boost converter
Text: IR3500 DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500 Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system
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IR3500
IR3500
TD5 THERMISTOR
l5109
IR3500MPBF
IR3500MTRPBF
IR3505
VR11
VRD11
thyrister SCR PIN
12v 5a dc dc boost converter
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Untitled
Abstract: No abstract text available
Text: 7 cìtì7Q7b GG1S0SÔ 5TM O rdering num ber: EN 535B l SA \ YO LB1274 N0.535B Monolithic Digital IC i 6-Unit, Darlington Transistor Array Circuit structure of this IC is a 6-u nit Darlington transistor array w ith NPN transistors. The IC is ideal for driving
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LB1274
18-digit
85-mA
DIP16F
MFP30S
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Untitled
Abstract: No abstract text available
Text: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50
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BDW23
BDW24
BDW23A
BDW24A
BDW23B
BDW24B
BDW23C
BDW24C
BDX53E
BDX54E
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transistor 206
Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3
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2N6050
O-204AA
2N6051
2N6052
2N6285
2N6286
2N6287
O-254AA
2N7371
T0-204AA
transistor 206
2N7370
AN-750
2N6057
2N6058
2N6059
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BDX53E
Abstract: BUB06 ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
Text: 1989963 b l de CEN TR A L I SEMICONDUCTOR oocm ns a 61C 00195'^ W~ POWER DARLINGTON TRANSISTORS EPOXY it H le = le NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max NPN PNP Amps BDW23 BDW24 : 6.0 45 50 750 - 20,000
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t-33-29
T-33-33
BDW23
BDW24
BDW23A
BDW24A
BDW23B
BDW24B
BDW23C
BDW24C
BDX53E
BUB06
ST BDX53C
BDW24
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BUB06
Abstract: ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B BDW24C
Text: Î989963 CENTRAL SEMI C O N D U C T OR bï de I TYPE 61C 00195'^ T-33-29 oocmns a T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = _ NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0
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T-33-29
T-33-33
BDW23
BDW24
BDW23A
BDW24A
BDW23B
BDW24B
BDW23C
BDW24C
BUB06
ST BDX53C
BDW24
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