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    IC CHIP 81C Search Results

    IC CHIP 81C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC CHIP 81C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAB 8051 p

    Abstract: pin diagram of ic 8088 81c54 latch 81c54 8086 logic diagram dip-16-1 P-DIP-16-1 tla-4060
    Text: SAE 81C54 CMOS RAM Preliminary DataACMOS IC Features ● ● ● ● ● ● ● ● ● ● 512 x 8 bit-organization Multiplexed address and data bus Tristate address and data lines On-chip address register Very low current consumption: 1 µA at 5.5 V during standby


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    PDF 81C54 P-DIP-16-1 81C54 Q67100-H8486 4096-bit SAB 8051 p pin diagram of ic 8088 latch 81c54 8086 logic diagram dip-16-1 P-DIP-16-1 tla-4060

    DDX-4100

    Abstract: DDX-2060 subwoofer PREAMP circuit diagram Apogee 4100 SPDIF i2s RECEIVER subwoofer preamp diagram AC97 DDX2060 CRYSTAL 20 MHZ doc SPDIF i2s RECEIVER selector
    Text: DDX-4100 DDX  Multichannel Digital Audio Processor FEATURES GENERAL DESCRIPTION • The DDX-4100 Digital Audio Processor is a single chip device for implementing complete digital solutions for audio amplification. In conjunction with multiple DDX-2060 Power IC’s, the solution provides


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    PDF DDX-4100 DDX-4100 DDX-2060 w/DDX-2060 subwoofer PREAMP circuit diagram Apogee 4100 SPDIF i2s RECEIVER subwoofer preamp diagram AC97 DDX2060 CRYSTAL 20 MHZ doc SPDIF i2s RECEIVER selector

    81c52

    Abstract: P-DIP-16-1 interfacing of RAM with 8086 SAB8086 dip-16-1 SAB 8051 p SAB 8051 pin diagram of ic 8086 8086 logic diagram 8086 microprocessor max mode operation
    Text: SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible Preliminary DataCMOS IC PFeatures ● ● ● ● ● ● ● ● 256 x 8-bit organization Standby mode Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051


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    PDF 81C52 P-DIP-16-1 P-DSO-20-1 81C52 Q67100-H9017 Q67100-H9015 P-DIP-16-1 interfacing of RAM with 8086 SAB8086 dip-16-1 SAB 8051 p SAB 8051 pin diagram of ic 8086 8086 logic diagram 8086 microprocessor max mode operation

    81c80a

    Abstract: 81C80 SAE81C80-A sae 81c80a 1E2H SAE81C80A 1E6H 8096 microcontroller features AD10 AD12
    Text: SAE 81C80 A CMOS Dual-Port RAM CMOS IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● Processor interface with address and data bus plus signals ALE, WR, RD 8051-, 8096-compatible timing Memory capacity 504 bytes All functions fully static excl. oscillator watchdog


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    PDF 81C80 8096-compatible P-LCC-44 81c80a SAE81C80-A sae 81c80a 1E2H SAE81C80A 1E6H 8096 microcontroller features AD10 AD12

    SAB 8051 p

    Abstract: 8085 memory organization SAB81C50 81C51 81C50-P SAB81C51 81C51-P SAB 8048 p 8085 sab SAB81C5
    Text: S IE M E N S 256 x 8-Bit Static CMOS RAM SAB 81C50 SAB 81C51 CMOS IC Type Ordering Code Package Chip Select SA B 81C50-P SA B 81C51-P Q67100-H8113 Q67100-H8114 P-DIP-16 P-DIP-16 CS CS The SAB 81C50/51 are 2048-bit static random access memories RAM , organized as


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    PDF 81C50 81C51 81C50-P 81C51-P Q67100-H8113 Q67100-H8114 P-DIP-16 P-DIP-16 81C50/51 2048-bit SAB 8051 p 8085 memory organization SAB81C50 81C51 SAB81C51 81C51-P SAB 8048 p 8085 sab SAB81C5

    D14J

    Abstract: No abstract text available
    Text: SIEMENS CMOS RAM SAE81C54 Preliminary DataACMOS IC Features • • • • • • • • • • 512 x 8 bit-organization Multiplexed address and data bus Tristate address and data lines On-chip address register Very low current consumption: 1 |iA at 5.5 V


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    PDF SAE81C54 SAE81C54P Q67100-H8486 P-DIP-16-1 81C54 4096-bit 81C54 IET00838 D14J

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CM O S RAM SAE81C 54 Preliminary DataACMOS IC Features • • • • • • • • • • 512 x 8 bit-organization Multiplexed address and data bus Tristate address and data lines On-chip address register Very low current consumption: 1 |xA at 5.5 V


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    PDF SAE81C AE81C Q67100-H8486 P-DIP-16-1 81C54 4096-bit 81C54

    al p53 smd

    Abstract: SAB81C50 keyboard controller 8048 Q67100-H3199 80c48 8048 microcontroller keyboard 80C382 8048 microcontroller 8048 microcontroller APPLICATION SAB81C5
    Text: Telephone Controller Single-Chip 8-Bit CMOS Microcontroller SAB 80 C 482 SAB 80C 382 Preliminary Data CMOS IC The SAB 80 C 4 8 2 is a low-power, advanced CMOS member o f the popular SAB 8 0 4 8 fam ily. The SAB 8 0 C 4 8 2 contains double-sized program memory and 4 additional I/O


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    PDF 80C482 Q67100-Z154 Q67100-H3205 80C382-PC Q67100-H3199 382-MP Q67100-H3242 Q67100-H8300 al p53 smd SAB81C50 keyboard controller 8048 80c48 8048 microcontroller keyboard 80C382 8048 microcontroller 8048 microcontroller APPLICATION SAB81C5

    3SB140

    Abstract: No abstract text available
    Text: blllSMT O O C ^ D S SSE D MICR ON T E C H N O L O G Y INC T37 MT5C1008 DIE 128K X 8 SRAM M IC R O N MILITARY SRAM DIE 128Kx 8 SRAM WITH DUAL CHIP ENABLE FEATURES High speed: 20,25,35 and 45ns High-performance, low-power, CMOS process Easy memory expansion with CE1, CE2 and OE


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    PDF MT5C1008 128Kx MIL-STD-883. MT5C1008DIE 3SB140

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 7ñ » e| 37^,:î7b2 DDD35MS b F U J IT S U M O S M e m o rie s M B 81C 68-45-W , M B 8 1 C 6 8 -5 5 -W CMOS 16,384-Bit Static Random Access Memory With Automatic Power Down D e s c rip tio n The Fujitsu M B81C68 Is a 4,096 word x 4-bit static random access


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    PDF DDD35MS T-46-23-08 8-45-W 384-Bit B81C68 MB81C68-4S-W MB81C68-55-W

    Untitled

    Abstract: No abstract text available
    Text: CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY FU JITSU MB81C69A-25 MB81C69A-30 MB81C69A-35 January 1988 Edition 2.0 4K x 4 16,384-BIT STATIC RANDOM ACCESS MEMORY WITH SUPPER HIGH SPEED The Fujitsu MB 81C 69A is 4096 words x 4 bits static random access m em ory


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    PDF 16384-BIT MB81C69A-25 MB81C69A-30 MB81C69A-35 384-BIT) DIP-20C-C03) MB81C69A-35 LCC-20C-F01)

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY M B 8K 69A -25 MB81C69A-30 MB81C69A-35 J a n u a ry 1 9 8 8 E d itio n 2 .0 4 K x 4 16,384-BIT STATIC RANDOM ACCESS MEMORY WITH SUPPER HIGH SPEED The Fujitsu MB 81C 69A is 4096 words x 4 bits static random access m em ory


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    PDF 16384-BIT MB81C69A-30 MB81C69A-35 384-BIT)

    sem ad 222m

    Abstract: ic 8155 timer sem aa 222m T81C
    Text: HS-81C55RH HS-81C56RH HARRIS S E M I C O N D U C T O R Radiation Hardened 256 x 8 CMOS RAM March 1996 Features Description • Devices QML Qualified in Accordance with MIL-PRF-38535 The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Harris radiation hardened SelfAligned Junction Isolated SAJI silicon gate technology.


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    PDF HS-81C55RH HS-81C56RH HS-81C55/56RH HS-80C85RH 500ns HS-81G55/56RH HS-81C55 1-800-4-HARRIS sem ad 222m ic 8155 timer sem aa 222m T81C

    SAB 8051 p

    Abstract: semiconductor smd ad 5.9 p35 SMD 6 PIN IC
    Text: SIEMENS 256 x 8-Bit Static CMOS RAM NMOS-Compatibie SAE 81C52 Preliminary DataCMOS IC P Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051


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    PDF 81C52 SAE81C52 Q67100-H9017 P-DIP-16-1 P-DSO-20-1 81C52 256x8 SAB 8051 p semiconductor smd ad 5.9 p35 SMD 6 PIN IC

    MB81C68

    Abstract: MB81C68-45 MB61C68-45 MB81C68-35
    Text: FUJITSU MICROELECTRONICS 7 f i ~ D e| 3 7 4 ^ 2 00G3230 4 1 T-46-23-08 FU JITSU MOS M em o ries M B 81C 68-35, M B 81C 68-45 16,384-Bit Static Random Access Memory with Automatic Power Down m Description The Fujitsu MB81C68 is a 4,096 word x 4-bit static random access


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    PDF 00G3230 T-46-23-08 384-Bit MB81C68 MB81C68-35 MB81C68-45 0G03E3b 20-Lead DIP-20C-C03) MB81C68-45 MB61C68-45

    A07 monolithic amplifier

    Abstract: electret 3 pin monolithic amplifier A04
    Text: S-THOMSON 81C 07e 19104 d I 7TÉTE37 0 0 1 S ì 33 fi :£ .y i o T - ^ 5 -C>Vt5 ? t •-»-% " =s S S I i ADVANCE DATA IN TEG R A TED TELEPHONE SPEECH TRANSM ISSIO N CIR CU IT WITH DTMF INTERFACE • D TM F G A IN A D JU ST A B L E TO S IG N A L L IN G R E Q U IR E M E N T S


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    PDF

    81C86-70

    Abstract: 81C86
    Text: FU JITSU CMOS 262,144-BIT STATIC RANDOM ACCESS MEMORY MB 8 K 8 6-55 MB 81C86-70 S eptem ber 1986 E d itio n 1 .0 64K x 4 B IT 262,144-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu M B 8 1C 8 6 is a 65,536-words by 4-bits static random access


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    PDF 144-BIT 81C86-70 144-BIT) 536-words 81C86-55 28-LE DIP-28C-A07I 81C86-70 81C86

    micro electret

    Abstract: L3212 ac bridge DIP-18 L321 tT1501
    Text: 0 7 e d I 7ti5clE37 0012=133 a 81C 19 10 4 O T - n 5 - c n - » 5 k £ i s -t h o n s o n .5 AD VA N CE DATA IN T E G R A T E D T E L E P H O N E S P E E C H T R A N S M IS S IO N C IR C U IT W ITH D T M F IN T E R F A C E DTMF GAIN A D JU S T A B L E TO S IG N A LLIN G R EQ U IR EM EN T S


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    PDF 7C12CÃ 150S2 600ms MOD96mA micro electret L3212 ac bridge DIP-18 L321 tT1501

    ITT taa 775

    Abstract: 81C79A MB81C79A-35 81c79 mb81c79a-45 mb81c79
    Text: 484823535348485323232301534823530189 FUJITSU CMOS 73728-BIT STATIC RANDOM ACCESS MEMORY MB81C79A-35 MB81C79A-45 Novenber 1987 Edition 2.0 72K-BIT 8192x9 HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB 81C79A is 8192 words x 9 bits static random access memory


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    PDF 73728-BIT MB81C79A-35 MB81C79A-45 72K-BIT 8192x9) 81C79A B8K79A-45 32-PAD LCC-32C-A02! ITT taa 775 81c79 mb81c79a-45 mb81c79

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU CMOS 262,144-BIT STATIC RANDOM ACCESS MEMORY MB 81C86-55 MB 81C86-70 September 1986 Edition 1.0 64K x 4 BIT 262,144-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu M B 8 1C 8 6 is a 65,536-words by 4-bits static random access


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    PDF 144-BIT 81C86-55 81C86-70 144-BIT) 536-words 81C86 28-LE D1P-28C-A07)

    Untitled

    Abstract: No abstract text available
    Text: F U J IT S U CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY MB8ÏC68A-25 MB81C68A-30 MB81C68A-35 January 1988 E d itio n 2.0 4K x 4 16,384-BIT STATIC RANDOM ACCESS MEMORY WITH SUPER HIGH SPEED AND AUTOMATIC POWER DOWN The Fujitsu MB 81C68A is 4096 words x 4 bits static random access memory


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    PDF 16384-BIT C68A-25 MB81C68A-30 MB81C68A-35 384-BIT) 81C68A advaC68A-30 MB81C68A-25

    80C51BH

    Abstract: No abstract text available
    Text: in t ^ T PIRBOJMOWADW 81C28 FAMILY 2048 x 8 Bit Ultra Low Power, High Integration Static RAM Max Access Time Max Active Current-CMOS Inputs Max Standby Current-CMOS Inputs LOW POWER 81C28L-200 200 ns 10 mA 50 fiA STANDARD 81C28-200 200 ns 10 mA 100 nA Integrated Address Latch


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    PDF 81C28 81C28L-200 81C28-200 80C51-BH, 80C31-BH, 80C49-BH 80C51 80C51 80C51BH

    81C55

    Abstract: intel 8155 80C85 8155 intel microprocessor programming 81C55RH 81C56RH HS-80C85RH HS-81C55RH HS-81C56RH 11KA2
    Text: 5ÖE J> H A RR IS S E M I C O N D SE CT OR HARRIS S E M I C O N D U C T O R 4 3 0 S 27 1 0 0 4 5 5 3 t 217 « H A S HS-81C55RH HS-81C56RH Radiation Hardened 256 x 8 CMOS RAM Decem ber 1992 Features “ * 'P 4 U Pinouts '2 3 r l2 - . 4 0 P IN C E R A M IC D IP


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    PDF HS-80C85RH 14-Bit HS-81C55/56RH 81C55 intel 8155 80C85 8155 intel microprocessor programming 81C55RH 81C56RH HS-80C85RH HS-81C55RH HS-81C56RH 11KA2

    DIODE 1E6H

    Abstract: 81C80 DIODE 1E9H SAE81C80-A siemens ad14 1E5H DIODE 1E8H 1ebh SAE81C80A
    Text: SIEMENS SAE 81C80 A CMOS Dual-Port RAM CMOS IC Features • Processor interface with address and data bus plus signals ALE, WR, RD • 8051-, 8096-compatible timing • Memory capacity 504 bytes • All functions fully static excl. oscillator watchdog • Standby operation


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    PDF 81C80 8096-compatible P-LCC-44 SAE81C DIODE 1E6H DIODE 1E9H SAE81C80-A siemens ad14 1E5H DIODE 1E8H 1ebh SAE81C80A