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    IC 7000 AND GATE Search Results

    IC 7000 AND GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    54H11DM Rochester Electronics LLC AND Visit Rochester Electronics LLC Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 7000 AND GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "Infrared TRANSCEIVER" DATASHEET

    Abstract: HSDL-7000 EN60825-1 Infrared-transceiver
    Text: HSDL-7000 IR 3/16 Encode/Decode IC Data Sheet Description Features The HSDL-7000 performs the modulation/ demodulation function used to both encode and decode the electrical pulses from the IR transceiver. These pulses are then sent to a standard UART which


    Original     		PDF HSDL-7000 HSDL-7000 16XCLK 115Kbps) 16XCLK EN60825-1. "Infrared TRANSCEIVER" DATASHEET EN60825-1 Infrared-transceiver

    "Infrared TRANSCEIVER" DATASHEET

    Abstract: HSDL-7000 EN60825-1 Infrared Transceiver
    Text: HSDL-7000 IR 3/16 Encode/Decode IC Data Sheet Description Features The HSDL-7000 performs the modulation/ demodulation function used to both encode and decode the electrical pulses from the IR transceiver. These pulses are then sent to a standard UART which


    Original     		PDF HSDL-7000 HSDL-7000 16XCLK 115Kbps) 16XCLK EN60825-1. I-008 5964-9278E "Infrared TRANSCEIVER" DATASHEET EN60825-1 Infrared Transceiver

    RS-232C application -75188, 75189

    Abstract: 75188 HIM-7000 75189 HIM7000 IN4619 75188 application
    Text: 1/2 001-01 / 20010914 / ed638_him7000.fm LAN Components HIM Series HIM-7000 Interface DIP FEATURES • This transceiver module contains all necessary components, such as the DC to DC converter, driver IC (equivalent to type 75188), receiver IC (equivalent to type 75189), and capacitors.


    Original     		PDF him7000 HIM-7000 330pF RS-232 HIM7000 RS-232C application -75188, 75189 75188 HIM-7000 75189 IN4619 75188 application

    HIM-7000

    Abstract: 75188 RS-232C application -75188, 75189 HIM7000 75189 75189 data sheet D638
    Text: LAN Components HIM Series HIM-7000 Interface DIP FEATURES • This transceiver module contains all necessary components, such as the DC to DC converter, driver IC equivalent to type 75188 , receiver IC (equivalent to type 75189), and capacitors. They can thus be implemented without additional external parts.


    Original     		PDF HIM-7000 330pF HIM-7000 RS-232C RS-232 HIM7000 75188 RS-232C application -75188, 75189 HIM7000 75189 75189 data sheet D638

    energy 3000 ups

    Abstract: APT25GN120B MIC4452 T0-247
    Text: APT25GN120B APT25GN120B TYPICAL PERFORMANCE CURVES 1200V Utilizing the latest Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE on performance. Easy paralleling results from very tight


    Original     		PDF APT25GN120B energy 3000 ups APT25GN120B MIC4452 T0-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GN120B G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B APT25GN120BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT25GN120B APT25GN120BG*

    Untitled

    Abstract: No abstract text available
    Text: APT25GN120B G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B APT25GN120BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT25GN120B APT25GN120BG*

    APT25GN120B

    Abstract: APT25GN120BG APT25GN120S APT25GN120SG MIC4452
    Text: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original     		PDF APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG MIC4452

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original     		PDF APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG*

    APT25GN120SG

    Abstract: energy 3000 ups APT25GN120B APT25GN120BG APT25GN120S MIC4452 APT30DQ120
    Text: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original     		PDF APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* APT25GN120SG energy 3000 ups APT25GN120B APT25GN120BG APT25GN120S MIC4452 APT30DQ120

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original     		PDF APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* VC005

    Untitled

    Abstract: No abstract text available
    Text: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT25GN120B2DQ2 APT25GN120B2DQ2 APT25GN120B2DQ2G* Resis31

    APT25GN120B2DQ2

    Abstract: No abstract text available
    Text: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT25GN120B2DQ2 APT25GN120B2DQ2G*

    Untitled

    Abstract: No abstract text available
    Text: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT25GN120B2DQ2 APT25GN120B2DQ2G*

    T1800GB45A

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T1800GB45A T1800GB45A

    IRF 3250

    Abstract: swiching transistor td 1410 transistor IRF 630 ir igbt 1200V 10A P channel 600v 20a IGBT 1000V 20A transistor irf 100v 200A C-150 IRG4PH40UD2
    Text: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 4739A IRG4PH40UD2 O-247AC IRF 3250 swiching transistor td 1410 transistor IRF 630 ir igbt 1200V 10A P channel 600v 20a IGBT 1000V 20A transistor irf 100v 200A C-150 IRG4PH40UD2

    Untitled

    Abstract: No abstract text available
    Text: FEA TU R ES • 256 x 1 photosite array ■ ■ ■ ■ ■ ■ ■ 13pm * 17pm photosiles on 13pm pitch Dynam ic range typical: 7000:1 O n-chip video and com pensation amplifiers Low pow er requirements All operating voltages 15V and under Low noise equivalent exposure


    OCR Scan     		PDF CCD111 256-element CCD110F.

    IC 7000 AND gate

    Abstract: No abstract text available
    Text: AN U = n*A\ u u □ □ □ □ u □ □ Altera Corporation H ig h -d en sity , h ig h -s p e e d C M O S E P L D s with s ec o n d -g e n era tio n Multiple Array MatriX M A X architecture C o m p lete E P L D family with logic density up to 20,000 typical gates


    OCR Scan     		PDF 15-ns IC 7000 AND gate

    L144CJ

    Abstract: Dual Comparators fet input siliconix FET DESIGN FET Input Amplifiers u402 CR043 FET-Input Operational Amplifiers AN743 U401 U401-04
    Text: b e n e fits • Minimum System Error and Calibra- • • • 5 mV Offset Maximum U401 • * Low Drift with Temperature 1 0 m v/°c Maximum (u 4 o i, 02) Operates from Low Power Supply Characteristic 1 Rv QSS 2 GSS Gate-Source Breakdown Voltage Gate-Source Cutoff


    OCR Scan     		PDF U401-04) AN74-3) L144CJ L144CJ Dual Comparators fet input siliconix FET DESIGN FET Input Amplifiers u402 CR043 FET-Input Operational Amplifiers AN743 U401 U401-04

    SG 2368

    Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
    Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 • GATE WIDTH: Wg = 330 jim • 4 PINS SUPER MINI MOLD


    OCR Scan     		PDF NE72118 NE72118 24-Hour SG 2368 sg 2534 DELTA 0431 180/TTK SG 2368

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T

    nec 2501 904

    Abstract: AN 17821 audio nec 303 j fet nec 7912
    Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION


    OCR Scan     		PDF NE721S01 NE721S01-T1 E721S01-T1B nec 2501 904 AN 17821 audio nec 303 j fet nec 7912

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    7256S

    Abstract: 7032S epm7120
    Text: ¿sonissy M A X 7000 M X7080EÌ MAX7000S Programmable Logic Device Family June 1996, ver. 4 Data Sheet Fe a tu re s. • ■ ■ ■ ■ ■ ■ ■ ■ H ig h -p erfo rm an ce, E E P R O M -based p ro g ram m ab le logic d ev ices (P LD s based on seco n d -g en eratio n M u ltip le A rray M a trix (M A X )


    OCR Scan     		PDF X7080EÌ MAX7000S 7000S EPM7256E 192-Pin 208-Pin 55555555555555555555555555HJ55 EPM7256E EPM7256S 7256S 7032S epm7120