IE5A
Abstract: Transistor 2Sd2589 2SD2589 2SB1659
Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA
|
Original
|
2SD2589
2SB1659)
FM-25
100max
110min
5000min
60typ
55typ
IE5A
Transistor 2Sd2589
2SD2589
2SB1659
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA
|
Original
|
2SD2589
100max
110min
5000min
60typ
55typ
2SB1659)
FM-25
|
PDF
|
2SD2642
Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
Text: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max
|
Original
|
2SD2642
100max
110min
5000min
60typ
55typ
O220F)
2SB1687)
2SD2642
2SD2642 equivalent
2sb1687
FM20
transistor 2SB1687
|
PDF
|
2sd2495 equivalent
Abstract: 2SD2495 2SB1626 FM20
Text: Equivalent circuit 2SD2495 ICBO VCEO 110 V IEBO VEBO 5 V V BR CEO IC 6 A VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A
|
Original
|
2SD2495
100max
110min
5000min
60typ
55typ
O220F)
2sd2495 equivalent
2SD2495
2SB1626
FM20
|
PDF
|
marking 08 sot-23
Abstract: marking AF marking AF SOT TSC2412 TSC2412CX
Text: TSC2412 General Purpose NPN Transistor BVCEO = 50V Pin assignment: 1. Base 2. Emitter 3. Collector Ic = 150mA VCE SAT , = 0.2V(typ.) @Ic / Ib = 50mA / 5mA Features Ordering Information Driver stage of AF amplifier. Part No. General purpose switching application
|
Original
|
TSC2412
150mA
TSC2412CX
OT-23
TSA1037CX
380uS,
OT-23
marking 08 sot-23
marking AF
marking AF SOT
TSC2412
TSC2412CX
|
PDF
|
Diode marking CODE 5M
Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
|
Original
|
LDTBG12GPWT1G
500mA
Diode marking CODE 5M
diode 50M marking code
LDTBG12GPWT1G
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
|
PDF
|
LDTBG12GPLT1G
Abstract: 102k1k marking 20M resistor 20M diode zener
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
|
Original
|
LDTBG12GPLT1G
500mA
OT-23
LDTBG12GPLT1G
102k1k
marking 20M resistor
20M diode zener
|
PDF
|
20M diode zener
Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
|
Original
|
LDTDG12GPT1G
500mA
SC-89
463C-01
463C-02.
20M diode zener
102k1k
LDTDG12GPT1G
SC-89
transistor collector diode protection
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating
|
Original
|
2SD2351
50mA/5mA)
100ms.
50mA/5mA
-10mA,
100MHz
|
PDF
|
102k1k
Abstract: LDTBG12GPT1G SC-89
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
|
Original
|
LDTBG12GPT1G
500mA
OT-23
SC-89
463C-01
463C-02.
102k1k
LDTBG12GPT1G
SC-89
|
PDF
|
BJW transistor
Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
Text: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol
|
Original
|
2SD2351
50mA/5mA)
100ms.
50mA/5mA
-10mA,
100MHz
BJW transistor
SMD transistor MARKING bjw
marking bjw
MARKING BJV
transistor bjv
TRANSISTOR bjw
2SD2351
hFE CLASSIFICATION Marking
|
PDF
|
Diode marking CODE 5M
Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
|
Original
|
LDTDG12GPWT1G
500mA
Diode marking CODE 5M
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
LDTDG12GPWT1G
LDTDG12GPWT3G
diode 50M marking code
|
PDF
|
102k1k
Abstract: 20M diode zener LDTDG12GPLT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
|
Original
|
LDTDG12GPLT1G
500mA
OT-23
102k1k
20M diode zener
LDTDG12GPLT1G
|
PDF
|
2SB1259
Abstract: 2SD2081 FM20 12v dc to 6v dc
Text: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)
|
Original
|
2SD2081
2SB1259)
10max
Pulse15)
120min
2000min
60typ
95typ
2SB1259
2SD2081
FM20
12v dc to 6v dc
|
PDF
|
|
|
MP6H1
Abstract: No abstract text available
Text: MP6H1 Transistors General purpose Dual digital transistors MP6H1 zFeatures 1) High hFE. hFE=300(Min.)(VCE / IC=2V/500mA) 2) Low saturation voltage. VCE(sat)=400mV(Max.) (IC/IB=500mA/5mA) 3) Built in Zener diode for protection against surges when connected to inductive load.
|
Original
|
V/500mA)
400mV
500mA/5mA)
MP6H1
|
PDF
|
2SB1381
Abstract: 2SD2079
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -2.5A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2.5A, IB= -5mA)
|
Original
|
-100V
2SD2079
-20mA
-100V;
2SB1381
2SD2079
|
PDF
|
transistor 2sb1624 2sd2493
Abstract: 2SB1624 2SD2493 2sd2493 transistor
Text: Equivalent circuit 2SD2493 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1624 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA
|
Original
|
2SD2493
2SB1624)
100max
110min
5000min
60typ
55typ
transistor 2sb1624 2sd2493
2SB1624
2SD2493
2sd2493 transistor
|
PDF
|
2SD2558
Abstract: 2sd25
Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A
|
Original
|
2SD2558
FM100
100max
200min
15typ
110typ
2SD2558
2sd25
|
PDF
|
2N3962
Abstract: No abstract text available
Text: 2N3962 PNP SILICON TRANSISTOR DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages. CBE VCEO VCBO VEBO IC Pd Tj,Tstg * Pulse test : pulse width <300/¿S, duty cycle < 2 % . MICRO IIIB L < y CONDITIONS IC=5mA IB=0
|
OCR Scan
|
2N3962
200mA
360mW
001mA
300/xS,
Sep-96
|
PDF
|
F J1 3007-2
Abstract: J1 3007-2 J1 3007-1
Text: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)
|
Original
|
ENN3007
2SC4365
2018B
2SC4365]
F J1 3007-2
J1 3007-2
J1 3007-1
|
PDF
|
MP6H1
Abstract: No abstract text available
Text: MP6H1 Transistors General purpose Dual digital transistors MP6H1 zFeatures 1) High hFE. hFE=300(Min.)(VCE / IC=2V/500mA) 2) Low saturation voltage. VCE(sat)=400mV(Max.) (IC/IB=500mA/5mA) 3) Built in Zener diode for protection against surges when connected to inductive load.
|
Original
|
V/500mA)
400mV
500mA/5mA)
MP6H1
|
PDF
|
DTDG14GP
Abstract: T100 sc-62 zener
Text: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
|
Original
|
DTDG14GP
500mA
SC-62
DTDG14GP
T100
sc-62 zener
|
PDF
|
J1 3007-1
Abstract: J1 3007-2 2SC4365 ITR06656 ITR06657 ITR06658 ITR06659 ITR06660 F J1 3007-2 marking amplifier j02
Text: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)
|
Original
|
ENN3007
2SC4365
2018B
2SC4365]
J1 3007-1
J1 3007-2
2SC4365
ITR06656
ITR06657
ITR06658
ITR06659
ITR06660
F J1 3007-2
marking amplifier j02
|
PDF
|
2SD2641
Abstract: 2SB1685
Text: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA
|
Original
|
2SD2641
2SB1685)
100max
110min
5000min
60typ
55typ
2SD2641
2SB1685
|
PDF
|
