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    IC 41 BF Search Results

    IC 41 BF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 41 BF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BL19

    Abstract: NTSC test generator IC 41 BF PAL color bar GENERATOR CX7969 IN733 IC test ntsc sync generator
    Text: CX7969 1/5 IL00 * C-MOS PULSE GENERATOR IC TEST 35 IN V BL19 IN V BL20 IN SYNC/BF DL 0 IN SYNC/BF DL 1 IN 41 40 39 38 37 IC TEST V IN 44 IC TCL IN IC TEST IN 45 42 CK IN 46 (5V) PAL/NTSC IN 47 VDD 43 MF/MM IN 48 -TOP VIEW- VD IN 1 36 XHB 0 IN HD IN


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    CX7969 560nS 840nS 980nS 280nS 850nS BL19 NTSC test generator IC 41 BF PAL color bar GENERATOR IN733 IC test ntsc sync generator PDF

    510H

    Abstract: AN2101FH DA11 DA16 QFH080-P-1420 dl38
    Text: AN2101FH NTSC/PAL signal processor IC for 510H color CCD cameras • Overview 1.25 41 12.00±0.20 21 +0.10 0.18 - 0.05 SEATING PLANE (1.00) +0.10 20 0.50 0.15 – 0.05 (1.25) 1 0.90±0.10 80 14.00±0.20 40 61 1.95±0.20 • Supports 510H CCDs (250,000 pixels)


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    AN2101FH AN2101FH 80-pin QFH080-P-1420) -68db 510H DA11 DA16 QFH080-P-1420 dl38 PDF

    dcp-20

    Abstract: n27m
    Text: ICs for Video Camera AN2101FH Single chip, analog signal processor IC for CCD camera • Overview Unit: mm 14.00±0.20 12.00±0.20 41 61 21 20 0.18 +0.10 –0.05 Seating plane 1.00 +0.10 0.50 0.15 –0.05 (1.25) 0.90±0.10 0.10±0.10 1 • For 510H (250 000 pixels) CCD


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    AN2101FH AN2101FH 18-ch) dcp-20 n27m PDF

    vcsb1

    Abstract: DA11 DA16 QFP080-P-1212 510H AN2101FH
    Text: ICs for Video Camera AN2101FH Single chip, analog signal processor IC for CCD camera • Overview 41 40 1.25 12.00±0.20 14.00±0.20 61 21 1 (1.25) 0.50 20 0.18 +0.10 –0.05 Seating plane (1.00) +0.10 80 0.15 –0.05 • For 510H (250 000 pixels) CCD • Applicable for both NTSC and PAL


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    AN2101FH 18-ch) AN2101FH vcsb1 DA11 DA16 QFP080-P-1212 510H PDF

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    Abstract: No abstract text available
    Text: ICs for Video Camera AN2101FH Single chip, analog signal processor IC for CCD camera • Overview 41 40 1.25 12.00±0.20 14.00±0.20 61 21 1 (1.25) 0.50 20 0.18 +0.10 –0.05 Seating plane (1.00) +0.10 80 0.15 –0.05 • For 510H (250 000 pixels) CCD • Applicable for both NTSC and PAL


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    AN2101FH AN2101FH 18-ch) 10setting 200PF PDF

    510H

    Abstract: AN2101FH DA16 QFP080-P-1212 QFP080-P-1212A AN-210 horizontal section of PANASONIC TV
    Text: ICs for Video Camera AN2101FH Single chip, analog signal processor IC for CCD camera • Overview Unit: mm 14.00±0.20 12.00±0.20 60 41 40 1.25 12.00±0.20 14.00±0.20 61 21 0.50 20 0.18 +0.10 –0.05 Seating plane (1.00) +0.10 (1.25) 0.15 –0.05 1 • For 510H (250 000 pixels) CCD


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    AN2101FH 18-ch) AN2101FH 510H DA16 QFP080-P-1212 QFP080-P-1212A AN-210 horizontal section of PANASONIC TV PDF

    510H

    Abstract: AN2101FH DA16 QFP080-P-1212 QFP080-P-1212A
    Text: ICs for Video Camera AN2101FH Single chip, analog signal processor IC for CCD camera • Overview Unit: mm 14.00±0.20 12.00±0.20 60 41 M Di ain sc te on na tin nc ue e/ d 40 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    AN2101FH 510H AN2101FH DA16 QFP080-P-1212 QFP080-P-1212A PDF

    BFQ72

    Abstract: Q62702-F776 s parameters transistor ac 151
    Text: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-F776 BFQ72 Q62702-F776 s parameters transistor ac 151 PDF

    Q62702-F788

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.


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    Q62702-F788 Q62702-F788 PDF

    z0 150 81

    Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
    Text: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-F774 z0 150 81 transistor s11 s12 s21 s22 Q62702-F774 bfq 85 PDF

    BFQ71

    Abstract: Q62702-F775 bfq 96
    Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.


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    Q62702-F775 BFQ71 Q62702-F775 bfq 96 PDF

    PPRC1101

    Abstract: PPRC1102 PPRC1103 7S16
    Text: P P C PRODUCTS CORP bOE D • bflSblTl DDGDTbb T1T « P P C 2.5 Amp Ultra Rectifier Chip I 50-15Q Vo}ts PPRC1101 PPRC1102 PPRC1103 CHIP TYPE: RH W -O S FEATURES • C h ip O u tlin e D im e n s io n s : 41 x 41 m ils • C h ip T h ic k n e s s 8 to 12 m ils


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    PPRC1101 PPRC1102 PPRC1103 500ma, 250ma PPRC1102 PPRC1103 7S16 PDF

    LN23SRP

    Abstract: LN23SRPH LN38GP LN23SCP LN33SCP LN38GCP LN43SCP LN48YCP LN48YP
    Text: PANASONIC INDL/ELEK IC 1SE D GGIOÖlfl 5 Round Type T -41-21 (Standard Lead Type) T-1 Series (aX,) C h aracte ristics: 1. Lighting surface T-1 round type 2. M a n y lens color variations 3. High reliability, long life Absolute M axim um Ratings (Ta = 25°C)


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    T-41-21 LN38GP LN38G10 LN430YPP /ILN430YP LN23SRP LN23SRPH LN23SCP LN33SCP LN38GCP LN43SCP LN48YCP LN48YP PDF

    202F

    Abstract: 20D2 EB41
    Text: UNCONTROLLED DOCUMENT REV, A B 04-.20 [0 0 . 1 6 5 ] PART NUMBER REV. IFL—EB41 41 0 0 —G7505 B E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 2 9 6. 1.3.06 E.C.N. # 1 1 1 4 8. 12.20.06 05.8OiO.lO [ 00,22 8 ± 0,0 04] / E L E C T R IC A L SPECIFICATIONS


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    8663H IFL-EB4-14100 LX39-4â G2Y7505. G7505 100mA, DECL05DRE 202F 20D2 EB41 PDF

    MN8027

    Abstract: 2048 x 1 ccd linear array TT30 22-DIC 22DIC panasonic linear ccd
    Text: PANASONIC INDL/ELEK -CIO 1^ 1 ^ 3 2 0 5 5 DDDbbbb 0 693 2 8:52 P ANASONIC INDL » ELECTRON IC 7ZÇ 06666 D~ T^41-55 -<^-Î ÏZyV _ MN8027 M N 8027 2,048 b V hCC D V “ T M ^ ^ / 2 , 0 4 8 - B i t S ensor CCD L in e a r Image “ffi'rP SSH H /Pin Assignment


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    T-41-55 MN8027 048-Bit MN8027 400nm-CÂ 2048 x 1 ccd linear array TT30 22-DIC 22DIC panasonic linear ccd PDF

    c331 npn transistor

    Abstract: transistor c331 c331 transistor BCX70 S3V 83 BCW60 a/9014 transistor c331 C332 C333 C423
    Text: BCW60, BCX70 NPN Transistors for AF prestages and switching applications BCW 60 and BCX 70 are epitaxial NPN silicon planar transistors in a plastic case 23 A 3 DIN 41 869 S O T -2 3 fo r AF prestages and sw itc h in g applications. They are particularly designed fo r use in th ic k and th in film circuits. Both types BCW 60


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    BCW60, BCX70 OT-23) Q62702 Q62702- c331 npn transistor transistor c331 c331 transistor BCX70 S3V 83 BCW60 a/9014 transistor c331 C332 C333 C423 PDF

    MN8091

    Abstract: panasonic LR6 Scans-00188
    Text: PANASONIC INDL/ELEK -CIO 6 9 3 2 8 5^2 P A N A S O N I C ~7Ë DÉTIb^sflsa Dootb^a i | T-41-55 72C 0 5 6 9 8 INOL t E L E C T R O N IC MN8091 M N8091 § 512fciv hMOS y- 7 4 *-$>*>•*}Self-Scanning512-BitMOSLinearImageSensor W ' î ' S S S E l / P î n Assignment


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    T-41-55 MN8091 512-Bit MN80911Â MN8091 Bs-812 S100ns panasonic LR6 Scans-00188 PDF

    TRANSISTOR K 314

    Abstract: antenne
    Text: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n ­


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    Q62702-F272 TRANSISTOR K 314 antenne PDF

    BFt 65

    Abstract: BFT65 UHF TRANSISTOR bft65 Q62702-F451 fll500
    Text: BFT 65 Rauscharm er N P N -U H F -T ra n s is to r B FT 6 5 ist ein ep itak tisc h er N P N -S iliz iu m -P la n a r-U H F -T ra n s is to r im K un ststoffgehäu se 5 0 B 3, D IN 41 8 6 7 T 0 - 5 0 ä h n l. zur V e rw e n d u n g in H F -V e rstärkern bis in den G H z -B e re ic h ,


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    BFT65 T0-50 Q62702-F-451 200MHz BFt 65 UHF TRANSISTOR bft65 Q62702-F451 fll500 PDF

    OA95

    Abstract: 1FW 75 sis 496 VD-1-54 MN8210W ccd le nRF C 1FW ST
    Text: PAN AS ONIC I N D L / E L E K 6932852 -C IO ~Tè PANASONIC D0 0 b 7 1 1 I N D L ♦ E L E C T R O N IC 72C D 06711 T-41-55 MN8210W MN8210W CPD mfcWi&m^r/CFD CHARGE PRIMING DEVICE S olid -S tate Image Sensor S f f i ^ K S l i l / P i n A ssig n m e n t MN8210W l i ,


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    DD0b711 0671L T-41-55 MN8210W MN8210W ilvi74i-i H-197 31it496, 20Xiia OA95 1FW 75 sis 496 VD-1-54 ccd le nRF C 1FW ST PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M44101AWJ, J, L,TP,RT-6,-7,-8,-10 NIBBLE MODE 4 1 9 4 3 0 4 -B IT 4 1 9 4 3 0 4 -W 0 R D B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN C O N F IG U R A T IO N (TOP V IE W ) This is a fam ily of 41 9430 4-w o rd by 1-bit dynam ic RAMS, fabricated w ith the high performance CMOS process, and


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    M5M44101AWJ, PDF

    Untitled

    Abstract: No abstract text available
    Text: L ITE M ^I semiconductors 1N5817 thru 1N5819 DO-41 FEATURES • M e ta l-S e m ic o n d u c to r ju n c tio n w it h g u a rd ring • E p ita x ia l c o n s tru c tio n • L o w f o r w a r d v o ltag e d ro p • H igh c u r r e n t c a p a b ility •


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    1N5817 1N5819 D0201A PDF

    Untitled

    Abstract: No abstract text available
    Text: LITEM il SE M IC O N D U C T O R S 1N4933G thru 1N4937G VO LTAG E RANG E 50 to 600 Volts CURRENT 1.0 Ampere DO-41 FEATURES o L o w cost • G la s s p a s siv a t e d j u n c t io n • L o w le a k a g e • L o w f o r w a r d v o lt a g e d r o p .0 3 4 .86


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    1N4933G 1N4937G DO-41 D0201AD PDF

    TEKELEC 297

    Abstract: 95a 324 D2B2 la 78042 0uf0 D5521 GE C20C
    Text: APPLICATION BRIEF AB-41 September 1988 Software Serial Port Implemented with the PCA BETSY JONES ECO APPLICATIONS ENGINEER Intel C orporation, 1988 O rder Number: 270531-002 In te l C o r p o r a tio n m a k e s n o w a rra n ty fo r th e u s e o f its p r o d u c ts a n d a s s u m e s n o re s p o n s ib ility fo r a n y e rro rs w h ic h m a y


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    AB-41 491/0590/4M TEKELEC 297 95a 324 D2B2 la 78042 0uf0 D5521 GE C20C PDF