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    IC 28256 Search Results

    IC 28256 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 28256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MP28256 21V, 3A 500kHz Synchronous Step-Down Coverter The Future of Analog IC Technology DESCRIPTION FEATURES The MP28256 is a synchronous rectified stepdown switch mode converter with built in internal power MOSFETs. It offers a very compact solution to achieve 3A continuous


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    PDF MP28256 500kHz MP28256 MO-229,

    34-PIN

    Abstract: DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC
    Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory


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    PDF DS1230W 100ns 28-pin 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    Untitled

    Abstract: No abstract text available
    Text: DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 • Data is automatically protected during power loss A6 I1 1 28 11 Vcc 11 2 1I 3 27 11 WE


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    PDF DS1230Y/AB electric015 Sbl413Q 2bl413Q D01b3T4

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4


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    PDF DS1230Y/AB 28-pin 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: D S 1630Y/A B DALLAS s e m ic o n d u c to r FEATURES DS1630Y/AB Partitionable 256K NV SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A 14 11 1 • Data is automatically protected during power loss A 12 11 • Directly replaces 32K x 8 volatile static RAM or


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    PDF 1630Y/A DS1630Y/AB DS1630Y) DS1630AB) 28-pin DS1630Y/AB 34-PIN 68-pin

    EEPROM 28256

    Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC
    Text: D S 1230Y /A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or


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    PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin EEPROM 28256 DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC

    34-PIN

    Abstract: DS1230 DS1230W DS9034PC
    Text: D S 1230W PRELIMINARY DALLAS s e m ic o n d u c to r FEATURES DS1230W 3.3V 256K Nonvolatile SRAM PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or


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    PDF ds1230w 28-pin 34-PIN DS1230 DS1230W DS9034PC

    ds1630AB-120

    Abstract: EEPROM 28256 34-PIN DS1630 DS1630AB DS1630Y ds1630y120
    Text: D S 1630Y /A B DALLAS s e m ic o n d u c to r . DS1630Y/AB Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 32K x 8 volatile static RAM or


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    PDF DS1630Y/AB DS1630Y) DS1630AB) 28-p5 630Y/AB DS1630Y/AB 34-PIN 68-pin ds1630AB-120 EEPROM 28256 DS1630 DS1630AB DS1630Y ds1630y120

    28256 eeprom

    Abstract: EEPROM 28256 DS1235AB DS1235Y AO-A14 RAM MEMORY 28256 AB15C DS123SY
    Text: DAI I AS DS1235Y/AB s e m ic o n d u c t o r 256K Nonvolatile SRAM PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss A u l 1 2 8 1 VC C A12l 2 2 7 l WB A7l 3 26 1 A13 I 4 25 1 A8 A5 ! 5


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    PDF DS1235Y/AB 28-pin DS1235Y) DS1235AB) DS1235Y/AB 144-bit, 200ns 28256 eeprom EEPROM 28256 DS1235AB DS1235Y AO-A14 RAM MEMORY 28256 AB15C DS123SY

    Untitled

    Abstract: No abstract text available
    Text: D S 1 6 3 0 Y /A B DALLAS s e m ic o n d u c to r FEATURES • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM • W rite protects selected blocks of m em ory when pro­


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    PDF elect40

    TEKELEC 297

    Abstract: 95a 324 D2B2 la 78042 0uf0 D5521 GE C20C
    Text: APPLICATION BRIEF AB-41 September 1988 Software Serial Port Implemented with the PCA BETSY JONES ECO APPLICATIONS ENGINEER Intel C orporation, 1988 O rder Number: 270531-002 In te l C o r p o r a tio n m a k e s n o w a rra n ty fo r th e u s e o f its p r o d u c ts a n d a s s u m e s n o re s p o n s ib ility fo r a n y e rro rs w h ic h m a y


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    PDF AB-41 491/0590/4M TEKELEC 297 95a 324 D2B2 la 78042 0uf0 D5521 GE C20C

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


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    P80A49H

    Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
    Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.


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    PDF RMX/80, P80A49H 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel

    VL VM VH lithium

    Abstract: No abstract text available
    Text: DS1630Y/AB DALLAS SEMICONDUCTOR DS1630Y/AB Partitioned 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs • Write protects selected blocks of memory regardless


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    PDF DS1630Y/AB 28-pin DS1630Y) DS1630AB) DS1630Y/AB VL VM VH lithium

    Untitled

    Abstract: No abstract text available
    Text: XICOR SHE INC D * m i? 4 3 aaaam? b A D V A N C E D IN FO R M A TIO N Commercial Industrial 64K X28C64 X28C64I 8K x 8 Bit Electrically Erasable PROM T~y¿-/3~Z7 DESCRIPTION FEATURES • LOW Power CMOS —60 mA Active Current Max. —200 /aA Standby Current Max.


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    PDF X28C64 X28C64I 64-Byte X28C64, 32-PAD

    EEPROM 28256

    Abstract: 34-PIN DS1230 DS1230W DS1230W-150 DS9034PC
    Text: DS1230W 3.3V 256k Nonvolatile SRAM ww w.dalsem i.com FEATU R E S • 10 years minimum data retention in the absence of external power ■ Data is automatically protected during power loss ■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory ■ Unlimited write cycles


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    PDF DS1230W 28-pin DS1230W EEPROM 28256 34-PIN DS1230 DS1230W-150 DS9034PC

    LG 631 9R

    Abstract: L9132 l9134 L9737 l9724 EL504 AX6042 EL519 SA852 L9727
    Text: Section 11. Worldwide Representatives and Distributors CONTENTS Micrel Sales O ffices. 347 U.S. Sales Representatives. 348


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    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    Untitled

    Abstract: No abstract text available
    Text: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe


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    PDF DS1230Y) DS1230AB)

    Untitled

    Abstract: No abstract text available
    Text: DS1630Y/AB DALLAS DS1630Y/AB Partitioned 256K NV SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Data retention in the absence of V^c • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs • Write protects selected blocks of memory regardless


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    PDF DS1630Y/AB 28-pin DS1630Y/AB 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs


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    PDF DS1730Y/YLPM 28-pin DS1730Y) 2bl4130 DD10771 DS1730YLPM 34-PIN 68-pin

    CSM 6850

    Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106
    Text: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at


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    PDF 80960XA 32-BIT 80-Bit CG/SALE/101789 CSM 6850 mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106