IC 28256 Search Results

IC 28256 Result Highlights (5)

Part	Manufacturer	Description
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
74HC4051FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL1G07FU	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC

IC 28256 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MP28256 21V, 3A 500kHz Synchronous Step-Down Coverter The Future of Analog IC Technology DESCRIPTION FEATURES The MP28256 is a synchronous rectified stepdown switch mode converter with built in internal power MOSFETs. It offers a very compact solution to achieve 3A continuous	Original	MP28256 500kHz MP28256 MO-229,	PDF
34-PIN Abstract: DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory	Original	DS1230W 100ns 28-pin 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC	PDF
JRC 45600 Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541 Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES	OCR Scan	ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 • Data is automatically protected during power loss A6 I1 1 28 11 Vcc 11 2 1I 3 27 11 WE	OCR Scan	DS1230Y/AB electric015 Sbl413Q 2bl413Q D01b3T4	PDF
Untitled Abstract: No abstract text available Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4	OCR Scan	DS1230Y/AB 28-pin 28-PIN	PDF
Untitled Abstract: No abstract text available Text: D S 1630Y/A B DALLAS s e m ic o n d u c to r FEATURES DS1630Y/AB Partitionable 256K NV SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A 14 11 1 • Data is automatically protected during power loss A 12 11 • Directly replaces 32K x 8 volatile static RAM or	OCR Scan	1630Y/A DS1630Y/AB DS1630Y) DS1630AB) 28-pin DS1630Y/AB 34-PIN 68-pin	PDF
EEPROM 28256 Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC Text: D S 1230Y /A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or	OCR Scan	DS1230Y/AB DS1230Y) DS1230AB) 28-pin EEPROM 28256 DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC	PDF
34-PIN Abstract: DS1230 DS1230W DS9034PC Text: D S 1230W PRELIMINARY DALLAS s e m ic o n d u c to r FEATURES DS1230W 3.3V 256K Nonvolatile SRAM PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or	OCR Scan	ds1230w 28-pin 34-PIN DS1230 DS1230W DS9034PC	PDF
ds1630AB-120 Abstract: EEPROM 28256 34-PIN DS1630 DS1630AB DS1630Y ds1630y120 Text: D S 1630Y /A B DALLAS s e m ic o n d u c to r . DS1630Y/AB Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 32K x 8 volatile static RAM or	OCR Scan	DS1630Y/AB DS1630Y) DS1630AB) 28-p5 630Y/AB DS1630Y/AB 34-PIN 68-pin ds1630AB-120 EEPROM 28256 DS1630 DS1630AB DS1630Y ds1630y120	PDF
28256 eeprom Abstract: EEPROM 28256 DS1235AB DS1235Y AO-A14 RAM MEMORY 28256 AB15C DS123SY Text: DAI I AS DS1235Y/AB s e m ic o n d u c t o r 256K Nonvolatile SRAM PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss A u l 1 2 8 1 VC C A12l 2 2 7 l WB A7l 3 26 1 A13 I 4 25 1 A8 A5 ! 5	OCR Scan	DS1235Y/AB 28-pin DS1235Y) DS1235AB) DS1235Y/AB 144-bit, 200ns 28256 eeprom EEPROM 28256 DS1235AB DS1235Y AO-A14 RAM MEMORY 28256 AB15C DS123SY	PDF
Untitled Abstract: No abstract text available Text: D S 1 6 3 0 Y /A B DALLAS s e m ic o n d u c to r FEATURES • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM • W rite protects selected blocks of m em ory when pro	OCR Scan	elect40	PDF
TEKELEC 297 Abstract: 95a 324 D2B2 la 78042 0uf0 D5521 GE C20C Text: APPLICATION BRIEF AB-41 September 1988 Software Serial Port Implemented with the PCA BETSY JONES ECO APPLICATIONS ENGINEER Intel C orporation, 1988 O rder Number: 270531-002 In te l C o r p o r a tio n m a k e s n o w a rra n ty fo r th e u s e o f its p r o d u c ts a n d a s s u m e s n o re s p o n s ib ility fo r a n y e rro rs w h ic h m a y	OCR Scan	AB-41 491/0590/4M TEKELEC 297 95a 324 D2B2 la 78042 0uf0 D5521 GE C20C	PDF
chw marking sot23 Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu	OCR Scan		PDF

P80A49H Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.	OCR Scan	RMX/80, P80A49H 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel	PDF
VL VM VH lithium Abstract: No abstract text available Text: DS1630Y/AB DALLAS SEMICONDUCTOR DS1630Y/AB Partitioned 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs • Write protects selected blocks of memory regardless	OCR Scan	DS1630Y/AB 28-pin DS1630Y) DS1630AB) DS1630Y/AB VL VM VH lithium	PDF
Untitled Abstract: No abstract text available Text: XICOR SHE INC D * m i? 4 3 aaaam? b A D V A N C E D IN FO R M A TIO N Commercial Industrial 64K X28C64 X28C64I 8K x 8 Bit Electrically Erasable PROM T~y¿-/3~Z7 DESCRIPTION FEATURES • LOW Power CMOS —60 mA Active Current Max. —200 /aA Standby Current Max.	OCR Scan	X28C64 X28C64I 64-Byte X28C64, 32-PAD	PDF
EEPROM 28256 Abstract: 34-PIN DS1230 DS1230W DS1230W-150 DS9034PC Text: DS1230W 3.3V 256k Nonvolatile SRAM ww w.dalsem i.com FEATU R E S • 10 years minimum data retention in the absence of external power ■ Data is automatically protected during power loss ■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory ■ Unlimited write cycles	OCR Scan	DS1230W 28-pin DS1230W EEPROM 28256 34-PIN DS1230 DS1230W-150 DS9034PC	PDF
LG 631 9R Abstract: L9132 l9134 L9737 l9724 EL504 AX6042 EL519 SA852 L9727 Text: Section 11. Worldwide Representatives and Distributors CONTENTS Micrel Sales O ffices. 347 U.S. Sales Representatives. 348	OCR Scan		PDF
thyristor TAG 8506 Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y	OCR Scan	11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719	PDF
Untitled Abstract: No abstract text available Text: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe	OCR Scan	DS1230Y) DS1230AB)	PDF
Untitled Abstract: No abstract text available Text: DS1630Y/AB DALLAS DS1630Y/AB Partitioned 256K NV SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Data retention in the absence of V^c • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs • Write protects selected blocks of memory regardless	OCR Scan	DS1630Y/AB 28-pin DS1630Y/AB 28-PIN	PDF
Untitled Abstract: No abstract text available Text: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs	OCR Scan	DS1730Y/YLPM 28-pin DS1730Y) 2bl4130 DD10771 DS1730YLPM 34-PIN 68-pin	PDF
CSM 6850 Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106 Text: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at	OCR Scan	80960XA 32-BIT 80-Bit CG/SALE/101789 CSM 6850 mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106	PDF

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IC 28256 Search Results

IC 28256 Result Highlights (5)

IC 28256 Datasheets Context Search

Untitled

34-PIN

JRC 45600

EATON CM20A

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EEPROM 28256

34-PIN

ds1630AB-120

28256 eeprom

Untitled

TEKELEC 297

chw marking sot23

P80A49H

VL VM VH lithium

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EEPROM 28256

LG 631 9R

thyristor TAG 8506

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CSM 6850