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    IB27 Search Results

    IB27 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL12027IB27Z Renesas Electronics Corporation Real Time Clock/Calendar with EEPROM, SOICN, /Tube Visit Renesas Electronics Corporation
    ISL12028IB27Z Renesas Electronics Corporation Real Time Clock/Calendar with I2C Bus™ and EEPROM, SOICN, /Tube Visit Renesas Electronics Corporation
    ISL12027IB27AZ Renesas Electronics Corporation Real Time Clock/Calendar with EEPROM, SOICN, /Tube Visit Renesas Electronics Corporation
    ISL12027IB27Z-T Renesas Electronics Corporation Real Time Clock/Calendar with EEPROM, SOICN, /Reel Visit Renesas Electronics Corporation
    ISL12028IB27Z-T Renesas Electronics Corporation Real Time Clock/Calendar with I2C Bus™ and EEPROM, SOICN, /Reel Visit Renesas Electronics Corporation
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    IB27 Price and Stock

    Renesas Electronics Corporation ISL12029IB27Z

    IC RTC CLK/CALENDAR I2C 14SOIC
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    Renesas Electronics Corporation ISL12027IB27Z

    IC RTC CLK/CALENDAR I2C 8SOIC
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    Renesas Electronics Corporation ISL12029IB27AZ

    IC RTC CLK/CALENDAR I2C 14SOIC
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    Renesas Electronics Corporation ISL12028IB27AZ

    IC RTC CLK/CALENDAR I2C 14SOIC
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    Renesas Electronics Corporation ISL12028AIB27Z

    IC RTC CLK/CALENDAR I2C 14SOIC
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    DigiKey ISL12028AIB27Z Tube
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    IB27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2731M110 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731M110 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C


    Original     		PDF IB2731M110 IB2731M110 IB2731M110-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2729M5 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor part number IB2729M5 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C


    Original     		PDF IB2729M5 IB2729M5 IB2729M5-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2729M25 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor part number IB2729M25 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. It is designed to serve


    Original     		PDF IB2729M25 IB2729M25 IB2729M150. IB2729M25-REV-NC-REV-E

    marking 5

    Abstract: transistor Common Base configuration diode MARKING F3 transistor DF 50 4620 NT 101 PW 1.5 IB2729M90
    Text: Part Number: Integra IB2729M90 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high f T The high power pulsed radar transistor part number IB2729M90 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C


    Original     		PDF IB2729M90 IB2729M90 IB2729M90-REV-NC-DS-REV-A marking 5 transistor Common Base configuration diode MARKING F3 transistor DF 50 4620 NT 101 PW 1.5

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2729M90 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor part number IB2729M90 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in


    Original     		PDF IB2729M90 IB2729M90 IB2729M90-REV-NC-DS-REV-B

    tegra 2

    Abstract: 300 watts amplifier s-band tegra radar amplifier s-band s-band 50 Watt power amplifier 300w amplifier 2 Watt S-Band Power Amplifier ibp2729m300 tegra 3 d5548
    Text: Part Number: Integra IBP2729M300 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Pallet Class C Operation − High Efficiency Part number IB2729M300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of


    Original     		PDF IBP2729M300 IB2729M300 IBP2729M300 IBP2729M300-REV-NC-DS-NC tegra 2 300 watts amplifier s-band tegra radar amplifier s-band s-band 50 Watt power amplifier 300w amplifier 2 Watt S-Band Power Amplifier tegra 3 d5548

    Untitled

    Abstract: No abstract text available
    Text: Integra Part Number: IB2729M170 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor part number IB2729M170 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class


    Original     		PDF IB2729M170 IB2729M170 IB2729M170-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over


    Original     		PDF IB2731MH110 IB2731MH110 IB2731MH110-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2731MH25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731MH25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C


    Original     		PDF IB2731MH25 IB2731MH25 IB2731MH25-REV-NC-DS-REV-D

    Untitled

    Abstract: No abstract text available
    Text: ISL12027, ISL12027A Data Sheet August 12, 2010 FN8232.8 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery


    Original     		PDF ISL12027, ISL12027A FN8232 ISL12027 512x8-bit 768kHz

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    ISL12027IV30AZ

    Abstract: ISL12027 ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27AZ ISL12027IV27Z SARONIX RoHS
    Text: ISL12027 Data Sheet January 19, 2010 FN8232.6 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery


    Original     		PDF ISL12027 FN8232 ISL12027 512x8-bit 768kHz ISL12027IV30AZ ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27AZ ISL12027IV27Z SARONIX RoHS

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    IB27Z

    Abstract: a1d21 ISL12027 ISL12027A ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27Z
    Text: ISL12027, ISL12027A Data Sheet August 12, 2010 FN8232.8 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery


    Original     		PDF ISL12027, ISL12027A FN8232 ISL12027 512x8-bit 768kHz IB27Z a1d21 ISL12027A ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27Z

    IB27AZ

    Abstract: X12028 ISL12027 ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27AZ ISL12027IV27Z
    Text: ISL12027 Data Sheet October 19, 2007 FN8232.5 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery


    Original     		PDF ISL12027 FN8232 ISL12027 768kHz IB27AZ X12028 ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27AZ ISL12027IV27Z

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF

    MB7053

    Abstract: 3S02A-2 MB7115E MB7116E 63LS240 63LS241 63PS240 63PS241 63S240 MB7116
    Text: - 6 m & í± £ hafiFlCPrl OC X A •'/& V y taac TCAC max ns) (ns) liO 30 63LS240 MM I 0-75 63LS241 «MI 0 — 75 W 63PS240 MMI 0-75 30* 63PS241 MMI 0-75 30* 63S240 MMI 0— 75 TOH max (ns) TOE max (ns) m m TOD V D D or V C C (ns) (V) 3 a I DD max (mA)


    OCR Scan     		PDF 63LS240 63LS241 63PS240 63PS241 63S240 M87115L MB7116E MB7116E-Â 512X4) 16PIN MB7053 3S02A-2 MB7115E 63LS241 63S240 MB7116

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031

    A27A

    Abstract: No abstract text available
    Text: I CONNECTOR I ENG NO. EDP NO. 784 I-A04B 015-05-8046 .098/ 2.49 CKTS 04 05 784 I-A06B 015-05-8066 06 784 I-A07B 015-05-8076 07 .617 (15.67) .715 (18.16) 08 784 I-A09B 015-05-8096 09 784 I-AI0B 015-05-8106 10 .813 (20.65) .912 (23.16) 1.010 (25.65) 784 l-A 1IB


    OCR Scan     		PDF I-A04B I-A05B I-A06B I-A07B I-A08B I-A09B I-A20B 784I-A2IB I-A22B I-A23B A27A

    Untitled

    Abstract: No abstract text available
    Text: NATIONAL SEMICOND -CLOGIO bSGllSB OGkibSfc. □ • 31E D National Semiconductor T - 5 2 -07-00 DM74AS1008A Quadruple 2-lnput AND Driver General Description Features This device contains four independent 2-input drivers, each of which performs the logic AND function. The ’AS1008A is


    OCR Scan     		PDF AS1008A DM74AS1008A TL/F/6339-1 DM74AS10 500ft

    AMD AM2 pin

    Abstract: M5M270100P Hitachi Scans-001
    Text: - 140 — P 5 7 1 0 0 0 X ïa J a JK W æ £ it £ <°c> A -, f- > y « tt « VDD A M tu ü / m Ci max pF V O L / I VOL max (V/mA) æ € æ V O H / I VOH min (V/mA) Co max (PF) TOH max (ns) TOR max (ns) TOD max (ns) 170 170 65 50 4. 5 - 5 . 5 30/1.0 0.8


    OCR Scan     		PDF Aih27C100 AaZTClOO-175 27C100-200 27C100-205 taZTC10a-250 072X8) P571000 Pin32 072X8 AMD AM2 pin M5M270100P Hitachi Scans-001