D1788
Abstract: No abstract text available
Text: Part Number: Integra IB1011S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S250 is designed for L-Band radar systems operating
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IB1011S250
IB1011S250
1090MHz.
IB1011S250-REV-NC-DS-REV-A
D1788
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M70 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M70 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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IB1011M70
IB1011M70
IB1011M70-REV-PR1-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011S1500 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S1500 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this
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IB1011S1500
IB1011S1500
IB1011S1500-REV-NC-DS-REV-C
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transistor d2118
Abstract: IB1011S190 d2118 D2118 transistor
Text: Part Number: Integra IB1011S190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this
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IB1011S190
IB1011S190
IB1011S190-REV-NC-DS-REV-D
transistor d2118
d2118
D2118 transistor
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S at VCC = 50V, this
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IB1011M190
IB1011M190
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M10 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011M10 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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IB1011M10
IB1011M10
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M1100 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M1100 is designed for TCAS avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 32µs, 2%, at VCC = 60V, this
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IB1011M1100
IB1011M1100
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011L470 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011L470 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S-ELM pulse burst
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IB1011L470
IB1011L470
IB1011L470-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011S350 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating
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IB1011S350
IB1011S350
1090MHz.
D1977-2
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M660 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M660 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S pulse burst conditions at
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011L15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L15 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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D1790
Abstract: No abstract text available
Text: Part Number: Integra IB1011S70 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating
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IB1011S70
IB1011S70
1090MHz.
IB1011S70-
D1790
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011L110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L110 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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IB1011M1000
Abstract: No abstract text available
Text: Part Number: Integra IB1011M1000 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M1000 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under simple mode S pulse conditions
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Abstract: No abstract text available
Text: Part Number: Integra IB1011S1000 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S1000 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 50V, this
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M20 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M20 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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Bd 585 transistor
Abstract: No abstract text available
Text: Part Number: Integra IB1011L220 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L220 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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Bd 585 transistor
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M140 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011L40 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L40 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M350 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M350 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S pulse burst conditions at
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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filter for GPS spice
Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率
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RF20105
67SiGe
JESD204A-DACADC
JESD204A-
AEC100
BFR90
BFQ33
TFF1004HN
JESD204A
BLF578)
filter for GPS spice
BLF578
diode smd marking BUF GP 750
BLF7G10-300p
AX 2008 lqfp48
GP 809 DIODE
BF1118
MPAL2731M15
bgu7051
BB 505 Varicap Diode
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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