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    bd 36 930

    Abstract: No abstract text available
    Text: Integra Part Number: IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 870-990 MHz. While operating in class C mode this common base device supplies a


    Original     		IB0810M210 IB0810M210 IB0810M210-REV-NC-DS-REV-B bd 36 930 PDF

    tegra 2

    Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255
    Text: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C


    Original     		IB0810M210 IB0810M210 IB0810M210-REV-NC-DS-REV-A tegra 2 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255 PDF