mosfet 500v 4A
Abstract: Mosfet application note fairchild FDD5N50NZTM
Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDD5N50NZ
FDD5N50NZ
mosfet 500v 4A
Mosfet application note fairchild
FDD5N50NZTM
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Untitled
Abstract: No abstract text available
Text: FFH60UP60S, FFH60UP60S3 tm Features 60A, 600V Ultrafast Rectifier • High Speed Switching, rrt < 80ns • High Reverse Voltage and High Reliability The FFH60UP60S and FFH60UP60S3 are ultrafast rectifiers with low forward voltage drop. it is a silicon nitride passivated ionimplanted epitaxial planar construction.
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FFH60UP60S,
FFH60UP60S3
FFH60UP60S
FFH60UP60S3
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fairchild pin 1 marking
Abstract: FFH60UP60S
Text: FFH60UP60S, FFH60UP60S3 tm Features 60A, 600V Ultrafast Rectifier • High Speed Switching, trr < 80ns The FFH60UP60S and FFH60UP60S3 are ultrafast rectifiers with low forward voltage drop. it is a silicon nitride passivated ionimplanted epitaxial planar construction.
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FFH60UP60S,
FFH60UP60S3
FFH60UP60S
FFH60UP60S3
fairchild pin 1 marking
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Untitled
Abstract: No abstract text available
Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDD5N50NZ
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Untitled
Abstract: No abstract text available
Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDD3N50NZ
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Untitled
Abstract: No abstract text available
Text: RHRP860_F085 September 2011 Data Sheet 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP860
175oC
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UR620C
Abstract: RURD620CCS9A RURD620CCS9A-F085 UR620
Text: _ RURD620CCS9A_F085 August 2011 Data Sheet 6A, 200V Ultrafast Dual Diodes Features The RURD620CCS9A_F085 are ultrafast dual diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RURD620CCS9A
175oC
UR620C
RURD620CCS9A-F085
UR620
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N-Channel mosfet 500v 25A
Abstract: FDD3N50NZTM dpak mosfet N-Channel mosfet 400v 25A
Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDD3N50NZ
FDD3N50NZ
N-Channel mosfet 500v 25A
FDD3N50NZTM
dpak mosfet
N-Channel mosfet 400v 25A
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Untitled
Abstract: No abstract text available
Text: _ RURD620CCS9A_F085 Data Sheet August 2011 6A, 200V Ultrafast Dual Diodes Features The RURD620CCS9A_F085 are ultrafast dual diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RURD620CCS9A
175oC
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TA49059
Abstract: rhrp TA4905
Text: RHRP860_F085 Data Sheet September 2011 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP860
TA49059.
TA49059
rhrp
TA4905
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Untitled
Abstract: No abstract text available
Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDP047N10
FDP047N10
O-220
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FDB8441
Abstract: No abstract text available
Text: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Features Applications Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 215nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDB8441
215nC
FDB8441
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Untitled
Abstract: No abstract text available
Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDP047N10
O-220
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fqt1n80
Abstract: No abstract text available
Text: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQT1N80TF
fqt1n80
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JESD22-A113F
Abstract: Fdb020n08 N_CHANNEL MOSFET 100V MOSFET
Text: FDB024N08BL7 N-Channel PowerTrench MOSFET 80V, 229A, 2.4mΩ Features Description • RDS on = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB024N08BL7
FDB024N08BL7
JESD22-A113F
J-STD-020D
Fdb020n08
N_CHANNEL MOSFET 100V MOSFET
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Untitled
Abstract: No abstract text available
Text: FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mΩ Features General Description Max rDS on = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC86520L
FDMC86520L
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diode sd pd
Abstract: No abstract text available
Text: FQD4P25TM_WS / FQU4P25 October 27, 2011 FQD4P25TM_WS / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQD4P25TM
FQU4P25
-250V,
diode sd pd
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100-P
Abstract: BUK553-60A BUK553-60B T0220AB
Text: P H IL I PS I N T E R N A T I O N A L bSE D HI 7 1 1 0 6 2 b Dab 4 EE b Philips Semiconductors T5b • PHIN Product Specification PowerMOS transistor BUK553-60A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode
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711002b
BUK553-60A/B
T0220AB
100-P
BUK553-60A
BUK553-60B
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Untitled
Abstract: No abstract text available
Text: 2SK2019-01 F U JI P O W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • =eatures • H g h speed switching 03.6±O.2 • L j w on-resistance *5*0.2 • l\o secondary breakdown • L dw driving power • I-igh voltage Gale
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2SK2019-01
O-220AB
54i0-2
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N ' [ 3521 SERIES 3522 SERIES 1 NOT RECOMMENDED FOR NEW DESIGNS Ultra-Low Drift - FET Input OPERATIONAL AMPLIFIERS FEATURES • ULTRA-LOW DRIFT. 1MV /° C max • LOW INITIAL OFFSET VOLTAGE. 25 0MV, max • LOW BIAS CURRENT, Ip A . max • LOW NOISE
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3500E
15VDC
20VDC
3522J.
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3522k
Abstract: bb3500 3522J BB3500E 3522L PDS-472 BB-3500 3521K 3521J 3521L
Text: 3521 SERIES 3522 SERIES BURR-BROWN EM M 1 N O T R ECO M M ENDED FOR NEW DESIGNS Ultra-Low Drift - FET Input O PER A TIO N AL AM PLIFIERS FEATURES • ULTRA-LOW DRIFT, 1MV/°C max • LOW INITIAL OFFSET VOLTAGE. 250MV, max • LOW BIAS CURRENT, IpA. max • LOW NOISE
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250MV,
20VDC
BB3500E)
35erence,
15VDC
3522J.
3522k
bb3500
3522J
BB3500E
3522L
PDS-472
BB-3500
3521K
3521J
3521L
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2SK820
Abstract: SF121 transistor DK qj 2sk820ii upcll K71E
Text: M O S F ie ld E ffe c t P o w e r T ra n s is to r 2SK820 N W ' ^ < 7 -M O S FET I i f f l 2S K 820Ü , N f i - i - ; i / X > / N > ' X y > l ' f P ' , 7 - M 0 S F E T T t < , v j- y r m iM , if# x 4 -y f - > g , ïtç ig - x m m ^ - f i • mm i HUS
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2SK820
2SK820Ã
160ns
tNC01O
2SK820
SF121
transistor DK qj
2sk820ii
upcll
K71E
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2SK831
Abstract: T108 T460 2SK83
Text: M o s h = 7 > > ^ M O S Field E ffe c t P o w e r T ra n s is to r N f - t ^ /N° 7 - M O S FET i i f f l 2SK831 ü , t ì s t a f f i < , N - f -v x X / > h -i •/ - f > ¿ 'I i t t i - « B ' ' OT7 — M O S F E T T ' + > 1 , r H I T O m : mm) «5 3.2 + 0.2
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2SK831
2SK831
T108
T460
2SK83
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bTI51
Abstract: fsjc F4CJ 2SJ209 TF230
Text: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-
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2SJ209
IEI-620)
bTI51
fsjc
F4CJ
2SJ209
TF230
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