MTL 188
Abstract: mtl ANALOG OUTPUT BARRIER rtd 392 platinum 2B59A 28serie 4-20 mA 1997 sensor Model 2B24A mtl BARRIER 188
Text: ANALOGDEVICESfAX-ON-DEMAND HOTLINE ~ -. - Page B ANALOG DEVICES LowCost Two-WireTransmitters 28 Series FEATURES Low Cost Compatible with Standard 4-20 mA Loops Broad Family Direct Sensor Interface to Thermocouples, RTDs and AD590s Loop-Powered Isolator High Performance
|
Original
|
PDF
|
AD590s
2B52/2B53
2B57A-
2B57A-I
AD590
4000P)
MTL 188
mtl ANALOG OUTPUT BARRIER
rtd 392 platinum
2B59A
28serie
4-20 mA 1997 sensor
Model 2B24A
mtl BARRIER 188
|
CMOS
Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate
|
Original
|
PDF
|
XC018
18-micron
XC018
CMOS
MICRON RESISTOR Mos
MOS RM3
power BJT PNP spice model
spice gate drive module
mos rm3 data
ESD "p-well" n-well"
CMOS spice model
ne3 MOS3ST
varactor diode SPICE model
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE m •v ■ SILICON N CHANNEL IGBT r; 1 ^ n 1 1 'w ■ v v ■ r nar <; 1 1 v ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0^s Max. (Iç = i50A) Low Saturation Voltage ; V q e (sat) = 2,7V (Max,) (Iq = 150A)
|
OCR Scan
|
PDF
|
MG150J1BS11
|
Untitled
Abstract: No abstract text available
Text: 3C/I50A R.F. Triode 3C/I50A CATH O D E. Thoriated tungsten filament Voltage Nominal current Peak emission 10 3.4 2.5 V A A Amplification factor\Measured at Va l k V \ 18 Impedance / I a i 50 mA f 3,800 Q R A T IN G . D IR E C T IN T E R - E L E C T R O D E C A P A C IT IE S .
|
OCR Scan
|
PDF
|
3C/I50A
3C/I50Aâ
|
SC150C-60
Abstract: b257 ht103m SC150C-80-120 SC150C SC150C-100 SC150C-40 SC150C-80 D0024m thyristor 1200V
Text: THYRISTOR SC150C_ For general phase control applications such as speed controls, light controls and welders etc. • • • • General power use lT= I50A , It rms = 2 3 0 A High voltage up to 1200V High surge current of 3000A • Stud type •Maximum Ratings
|
OCR Scan
|
PDF
|
SC150C_
SC150C-40
SC150C-60
SC150C-80
SC150C-100
SCI50C-120
D0024m
B-258
SC150C-60
b257
ht103m
SC150C-80-120
SC150C
D0024m
thyristor 1200V
|
Mullard 425
Abstract: CV115 Mullard
Text: U .H .F. P O W ER T E T R O D E QVI-I50A Forced air-cooled power tetrode rated for a maximum anode dissipation o f 1S0W and suitable for use at frequencies up to 500 Mc/s. P R E L IM IN A R Y DATA This data should be read in conjunction w ith “ O perating Notes,
|
OCR Scan
|
PDF
|
QVI-I50A
QV1-150A
-CV1-150A
Mullard 425
CV115
Mullard
|
lt 431
Abstract: fn 431 H A 431
Text: 5A/I50A Carrier Pentode « io a > 43I0A CATH O D E. Indirectly heated oxide-coated Voltage Nom inal current 10 0.32 V A 2.0 m A/V R A TIN G . Mutual conductance f J Screen grid/j, ] I Measured at V a = V g » = 135 Vgs 0 V gl- 3 I f j 19 IN T E R -E L E C T R O D E C A P A C ITIES .
|
OCR Scan
|
PDF
|
A/I50A
43I0A)
A/I50Aâ
lt 431
fn 431
H A 431
|
50J2Y
Abstract: 50J2YS50
Text: T O SH IB A MG150J2YS50 MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - f S S A ± 0 .3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
|
OCR Scan
|
PDF
|
MG150J2YS50
50J2YS50
2-95A1A
50J2Y
50J2YS50
|
Untitled
Abstract: No abstract text available
Text: MG150J2YS50 T O SH IB A MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - 12 5.4 * 0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
|
OCR Scan
|
PDF
|
MG150J2YS50
50J2YS50
2-95A1A
|
Cutler-Hammer
Abstract: NH3 GL-GG TYCO 596A RECTIFIER LS CIRCUIT BREAKERS KS-20472 THHN 6 str green kic 125 hot air gun fan controller circuit G488 N 847568920
Text: CB Architecture TS 208/240V TS 480V Battery Panels @ AC/Rect: 1 TABLE t SYSTEM ARCHITECTURE TABLE 3: AC INPUT AND RECTIFIER SHELF OPTIONS IN A 6 OR 7 FOOT HIGH CABINET OOOSE OM.Y 0 £ choose only one H569-434 AC INPUT AND RECTIFIER SHELF OPTIONS 7 IN A 7 FOOT HIGH CABINET
|
OCR Scan
|
PDF
|
208/240V
h569-434
65kic)
KS24I94
GPS4848/I00
Cutler-Hammer
NH3 GL-GG
TYCO 596A RECTIFIER
LS CIRCUIT BREAKERS
KS-20472
THHN 6 str green
kic 125
hot air gun fan controller circuit
G488 N
847568920
|
Untitled
Abstract: No abstract text available
Text: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin gton power transistor module with two high speed, high power Darlington transis tors. Each transistor has a reverse paral leled fast recovery diode.
|
OCR Scan
|
PDF
|
OCA15QA/QBB150A40/60
E76102
QCA150A
QBB150A
QCAI50A--Series-connected
QBBI50A
400/600V
QCA150A/QBB150A
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 4 97F8095 RBC PROPRIETARY AND CONFIDENTIAL I 12 : 14:08 3. 6 6 ± . 06 DATE : 0 5 - D e c - 05 I I INFORMATION M o d i f i e d per E C N NO. 0627. I . 9 7 ± . 06 25 0 0 . 8 13 ± . 0 3 0 0.81 3± .03 0 .09 0 SCALE »0 . 7 5 ± . 0 3 1.250 BLADE DETAILS SCALE
|
OCR Scan
|
PDF
|
97F8095
00/jFÂ
I50AC
30jjA
|
50L-060
Abstract: No abstract text available
Text: FUJI 6-Pack IGBT 600 V 50 A 6MBI 50L-060 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings 4 -0 5 .4 • Features • High Speed Sw itching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for M otor Drive • AC and DC Servo Drive A m p lifie r
|
OCR Scan
|
PDF
|
50L-060
|
|
|
Untitled
Abstract: No abstract text available
Text: MG150J1ZS50 U nit in mm HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L A PPLICA TIO N S. 2-FAST-ON-TAB »110 • • The Electrodes are Isolated from Case. High Input Impedance • Enhancement-M ode High Speed : tf= 0.30/iS Max. (Iç = 150A)
|
OCR Scan
|
PDF
|
MG150J1ZS50
30/iS
15//s
|
FOR5J
Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Text: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3
|
OCR Scan
|
PDF
|
SFOH5H43
SF3H41
SF5H41
1000A
I500A
SF1500C
SF1500J27
SF500H27
SF600H27
SF500D27
FOR5J
GTO thyristor 100A, 400V
TO-220AH
TSZ25G
5F13
TSS1G41
s6565g
GTO thyristor 5A, 400V
MSG100L41
TSS2G41S
|
Untitled
Abstract: No abstract text available
Text: T R A N S IS T O R M O D U LE QCA150AA100 UL;E76102 M Q C A 1 5 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. Th e mounting base o f the module is electrically isolated
|
OCR Scan
|
PDF
|
QCA150AA100
E76102
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral leled fast recovery diode ( t r r : 200ns). The mounting base of the
|
OCR Scan
|
PDF
|
200ns)
|
Untitled
Abstract: No abstract text available
Text: 2 D 1 1 0 0 M A - 0 5 0 0 50A '< s ± « -,7- t ^ - * Outline Drawings 7 — POWER TR A NSISTO R M ODULE • Features • hF E *''ÎÜ ^' H igh DC C u rre n t Gain • H ig h speed s w itc h in g • 7 'J — K p*3ïBS • ÎÊÜtJfé In c lu d in g Free W h e e lin g D iode
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: NIHON DEMPA K OGY O CO LTD 35E ^14^32 D DDDDDL2 I NDKC 3 CRYSTAL OSCILLATORS " T -Ö O ' O ^ OVEN CONTROLLED CRYSTAL OSCILLATORS OCXO 19100 Series Main applications: Communications equipment, Measuring instruments etc. Features: 1. Excellent aging characteristics
|
OCR Scan
|
PDF
|
140A-BGE71,
140A-CEE70)
9I40A
30VDC
planes/30
5X10-'
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1001 AF/AFT/ATR/AST/ASR-85,-10.-85L.-1 OL T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 131,072-WORD BY 8-BIT STATIC R A M DESCRIPTION The TC55V1001AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM organized as
|
OCR Scan
|
PDF
|
TC55V1001
AF/AFT/ATR/AST/ASR-85
TC55V1001AF/AFT/ATR/AST/ASR
576-bit
TC55V1001AF/AFT/ATR/AST/ASR-85
32-P-0820-0
32-P-0
|
1d1400a-120
Abstract: 2DI200D-100 IC A 3120 M105 1DI400D-100 1DI300D-100 2DI100D-100 2DI150D-100 2DI50D-100 2DI75D-100
Text: 1000 v o lts class p o w e r tran sisto r m odules ♦ T e rm in a ls lay o u t in w hich d rive w irin g and p o w er w irin g do not co m e accross. * S u ited fo r m o to r control ap p licatio n s w ith 380 to 440V volts inputs. D e v ic e ty p e P ackag e
|
OCR Scan
|
PDF
|
2DI30D
2DI50D-100
2DI75D-100
2DI100D-100
2DI150D-100
2DI30A-120
2DI50A-120
2DI100A-120
2DI150A-120
1DI200A-120
1d1400a-120
2DI200D-100
IC A 3120
M105
1DI400D-100
1DI300D-100
|
6D120C-050
Abstract: 3 phase inverter circuits M601 6DI30A-050 6DI50A-055 6D120 6DI15A-050 IC M605 6DI50B-050 EVF31T-050A
Text: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G O l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.
|
OCR Scan
|
PDF
|
EVF33T-040
6DM0A-050
EVF31T-050A
6DI15A-050
150M603
6DI10A-120
6DI15A-120
6DI30A-120
2DI200A-020
1DI500A-030
6D120C-050
3 phase inverter circuits
M601
6DI30A-050
6DI50A-055
6D120
IC M605
6DI50B-050
|
CM IWN DC
Abstract: S3050 transistor kda 2DI150M-050
Text: 2 D I 150M-050 15 oa IW K ’+ jä : Outline Drawings POWER TRANSISTOR MODULE • 4 * A : Features • S h FE High DC Current Gain • High Speed Switching : A pplications • i G e n e r a l • £ • N C lfE ffifctt • ntfiyh Purpose Inverter Uninterruptible Power Supply
|
OCR Scan
|
PDF
|
150M-050
E82988
I95t/R89
Shl50
CM IWN DC
S3050
transistor kda
2DI150M-050
|
