IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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HP83000
Abstract: HP8753E Kingston Technology testing of diode SAMSUNG RLC 4Mx1 Hyundai Semiconductor UPD488385FB-C80-45-BF1 UPD488385FB-C80-45BF1 KM418RD8C-RK80
Text: RDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on RDRAM components. A small sample of components 2-5 devices has been characterized on an HP83000 tester with Rebus, a test program written by Rambus. The RLC
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HP83000
HP8753E
Kingston Technology
testing of diode
SAMSUNG RLC
4Mx1
Hyundai Semiconductor
UPD488385FB-C80-45-BF1
UPD488385FB-C80-45BF1
KM418RD8C-RK80
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hyundai b71
Abstract: No abstract text available
Text: Direct Rambus RIMM with 128/144Mbit RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose highperformance memory subsystem suitable for use in a broad range of applications including computer memory, personal
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128/144Mbit
128Mb/144Mb
600MHz
711MHz
800MHz
256Mb/288Mb
512Mb/576Mb
600MHz
hyundai b71
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sda 2087 N
Abstract: trac 40800 dram memory module 1993 marking code b35 HME DRAM 1616 marking B44
Text: Direct Rambus RIMM with 128/144Mbit RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose highperformance memory subsystem suitable for use in a broad range of applications including computer memory, personal
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128/144Mbit
128Mb/144Mb
sda 2087 N
trac 40800
dram memory module 1993
marking code b35
HME DRAM 1616
marking B44
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Ziff Davis
Abstract: Micron Electronics
Text: INSIDE/out a quarterly newsletter for shareholders November 1999 Contents In the News Memory: Educate Yourself! in the news 1 did you know? 2 latest products 3 in the community 3 So what does it all mean? In the last issue we talked about segmentation & growth in the memory market as an effort to provide
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PC133,
Ziff Davis
Micron Electronics
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cypress flash 370 device
Abstract: rambus rdram cypress flash 370 Playstation 3 Circuit future applications of flash 370 CPLd "embedded dram" and market share cypress flash 370 device technology
Text: FOR IMMEDIATE RELEASE CYPRESS Q100 Records: Revenue, $264.2 million; Earnings, EBG $0.41 per share; Bookings, $322.8 million San Jose, California, April 18, 2000 . . . Cypress Semiconductor Corporation NYSE: CY today announced record revenue of $264.2 million for the first quarter of fiscal year
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IDT ZBT SRAM 1994
Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code
Text: B u y e r s Volume 7, Issue 4 Product and service news for Micron customers 4Q00 MBN Extra: Micron Unveils New Corporate Brand “Micron Buyers News Extra” is your opportunity to hear from Micron’s management team This newsletter contains forwardlooking statements regarding the company and the industry. These particular
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Untitled
Abstract: No abstract text available
Text: SMUUUUUFU0U01 November 30, 2000 Revision History • November 30, 2000 Modified supply current profile specifications on page 8. • October 19, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SMUUUUUFU0U01
512/576MByte
16Mx16/18
184-pin
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RG25
Abstract: OKI RDRAM OKI RDRAM 18
Text: SMU128UBUAUUU SMU144UBUAUUU March 2, 2001 Revision History • March 2, 2001 Datasheet updated. • July 11, 2000 Corrected table on page 10. • June 12, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SMU128UBUAUUU
SMU144UBUAUUU
128/144MByte
8Mx16/18
160-pin
RG25
OKI RDRAM
OKI RDRAM 18
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OKI hitachi RDRAM
Abstract: No abstract text available
Text: SMUUUUUFUAU01 May 2, 2000 Revision History • May 2, 2000 Modified page 12. • April 24, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
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SMUUUUUFUAU01
128/144MByte
8Mx16/18
184-pin
OKI hitachi RDRAM
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45800
Abstract: No abstract text available
Text: SMUUUUUFU0U02 April 14, 2000 Revision History • April 14, 2000 Modified datasheet description on page 2. • February 16, 2000 Modified module access speed on page 18. • December 8, 1999 Modified page 18 and functional diagram on page 2. • September 24, 1999
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SMUUUUUFU0U02
64/72MB
45800
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part number decoder toshiba dram
Abstract: MOSYS eDRAM LG concurrent RDRAM "embedded dram" nec ibm edram samsung dram sldram MoSys sram embedded mosys rdram samsung cdram
Text: Systems in Silicon Designing with DRAM AMD Embedded Processor Division, Designing with DRAM Overview Designing with DRAM Agenda Systems in Silicon • What are DRAMs? – The transistor level – How they differ from SRAM and FLASH • Bus Cycle Review – 16-bit
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16-bit
32-bit
Am186ED
50-ns
part number decoder toshiba dram
MOSYS eDRAM
LG concurrent RDRAM
"embedded dram" nec
ibm edram
samsung dram
sldram
MoSys sram embedded
mosys rdram
samsung cdram
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45800
Abstract: No abstract text available
Text: SMART SMUUUUUUUUU01 Modular Technologies OBSOLETE Revision History • March 27, 2000 Datasheet obsoleted. • February 16, 2000 Modified module access speed on page 18. • December 8, 1999 Modified page 13 and functional diagram on page 2. • September 23, 1999
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SMUUUUUUUUU01
604-39929N
45800
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lg philips lcd ic scaler
Abstract: acer Notebook lcd inverter schematic 71-P3000-004A w83627hf-am acer one Z1401 TH63LVDM83A w78e62bp oz970 w78e62 infrared receiver led
Text: Preface LCD Computer LP300 Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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LP300
lg philips lcd ic scaler
acer Notebook lcd inverter schematic
71-P3000-004A
w83627hf-am
acer one Z1401
TH63LVDM83A
w78e62bp
oz970
w78e62
infrared receiver led
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Untitled
Abstract: No abstract text available
Text: FORM 10-Q UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, DC 20549 [X] QUARTERLY REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 For the quarterly period ended June 1, 2000 OR [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES
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AUG-31-2000
SEP-03-1999
JUN-01-2000
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RDRAM Clock
Abstract: No abstract text available
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
RDRAM Clock
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da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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samsung 10K filing SEC
Abstract: samsung electronics 10K filing SEC
Text: As filed with the Securities and Exchange Commission on March 22, 2000 Registration No. 333-_ SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 _ FORM S-3 REGISTRATION STATEMENT Under THE SECURITIES ACT OF 1933 MICRON TECHNOLOGY, INC.
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hyundai rdram
Abstract: REF05
Text: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and
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HYRDU64164
HYRDU72184
64/72Mbit
600MHz
800MHz
Mar98
hyundai rdram
REF05
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hyundai rdram
Abstract: No abstract text available
Text: T NU Direct RDRAM / SyncLink DRAM PART NUMBERING HY XX X XX XX X X X - XXX SPEED 50M 60M 66M 70M 80M 10G 12G 16G HYUNDAI Memory Products PRODUCT GROUP RD : Direct RDRAM SL : SyncLink DRAM PROCESS & POWER SUPPLY U : CMOS,2.5V PACKAGE H : SHP V : SVP M : |UBGA
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500MHz
600MHz
667MHz
700MHz
800MHz
18M-bit
64M-bit
72M-bit
l44M-bit
VSMP-400mil
hyundai rdram
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HY5RC1809
Abstract: concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53
Text: HY5RC1809 / 6408 Series “HYUNDAI 18Mb 2Mx9 / 64Mb(8Mx8), Concurrent RDRAM Preliminary Overview The 18/64M b C o n cu rre n t R am bus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M words by 9 bits or 8M words by 8 bits. They are capable of bursting unlimited length of
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18/64M
SVP-32
HY5RC1809
concurrent rdram
L3C analog
hyundai concurrent rdram
hyundai rdram
concurrent RDRAM 72
HY5RC1809-66
concurrent rdram hyundai
concurrent rdram 72 mbit
HY5RC1809-53
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RJH 30 E3
Abstract: RDRAM Clock S5550 HYRDU64164 HYRDU72184 REF05
Text: » « r u H P f t i • HYRDU64164 / HYRDU72184 SERIES 64/72MBIT DIRECT RDRAMTM > Advanced Information Overview The Direct Rambus DRAM (Direct RDRAM™ is a general purpose high-perform ance m em ory device suitable fo r use in a broad range o f applications
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HYRDU64164
HYRDU72184
64/72MBIT
RJH 30 E3
RDRAM Clock
S5550
REF05
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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