r56 ce
Abstract: OA81 marking code R66 GMS800 GMS81504 labtool 48 MARKING R00
Text: HYUNDAI MicroElectronics GMS81504 GMS81504 CMOS SINGLE-CHIP 8-BIT MICROCONTROLLER OVERVIEW Description The GMS81504 is a high-performance CMOS 8-bit microcontroller with 4K bytes of ROM. The device is one of GMS800 family. The HYUNDAI GMS81504 is a powerful microcontroller which provides a highly flexible
|
Original
|
PDF
|
GMS81504
GMS81504
GMS800
28SOP)
16-bit
r56 ce
OA81
marking code R66
labtool 48
MARKING R00
|
S20 K25
Abstract: D113 D114 D115 D116 D117 HL15703 SEG55
Text: HL15703 HL15703 LCD Driver IC Preliminary 2Q. 1999 Hyundai Electronics Industries System IC Division 1 Preliminary HL15703 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers
|
Original
|
PDF
|
HL15703
HL15703
80pply
SEG56)
SEG57)
S20 K25
D113
D114
D115
D116
D117
SEG55
|
D223 DIODE
Abstract: SEG55 lcd hyundai m d223 HL15604 D200 POWER DIODES D16813
Text: HL15604 HL15604 LCD Driver IC Preliminary 2Q. 1999 Hyundai Electronics Industries System IC Division 1 Preliminary HL15604 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers
|
Original
|
PDF
|
HL15604
HL15604
SEG55)
SEG56)
D223 DIODE
SEG55
lcd hyundai
m d223
D200 POWER DIODES
D16813
|
HL14203
Abstract: SEG40 diode D83
Text: HL14203 HL14203 LCD Driver IC Preliminary 2Q. 1999 Hyundai Electronics Industries System IC Division 1 Preliminary HL14203 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers
|
Original
|
PDF
|
HL14203
HL14203
SEG41)
SEG42)
SEG40
diode D83
|
Untitled
Abstract: No abstract text available
Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V653220B
32Bit
HY57V653220B
864-bit
288x32.
11/Dec
400mil
|
Untitled
Abstract: No abstract text available
Text: HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V6V3220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V643220C
32Bit
HY57V6V3220C
864-bit
HY57V643220C
288x32.
400mil
86pin
|
hyundai lcd panel 10
Abstract: No abstract text available
Text: HL14104 HL14104 LCD Driver Hyundai Electronics Industries System IC Division 1 HL14104 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers 8. Key Scan Function 9. LCD Function
|
Original
|
PDF
|
HL14104
HL14104
SEG40)
SEG41)
hyundai lcd panel 10
|
diode D83
Abstract: No abstract text available
Text: HL14203 HL14203 LCD Driver Hyundai Electronics Industries System IC Division 1 HL14203 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers 8. Key Scan Function 9. LCD Function
|
Original
|
PDF
|
HL14203
HL14203
SEG41)
SEG42)
diode D83
|
Untitled
Abstract: No abstract text available
Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V653220B
32Bit
HY57V653220B
864-bit
288x32.
400mil
86pin
|
SCK 164
Abstract: 800T lcd hyundai DIODE D29 -08 diode D83 D150 transistor hyundai lcd panel 10 hyundai panel 10 key scan kin 52
Text: HL15604 HL14104 LCD Driver Hyundai Electronics Industries System IC Division 1 HL15604 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers 8. Key Scan Function 9. LCD Function
|
Original
|
PDF
|
HL15604
HL14104
HL14104
SEG40)
SEG41)
SCK 164
800T
lcd hyundai
DIODE D29 -08
diode D83
D150 transistor
hyundai lcd panel 10
hyundai panel 10
key scan
kin 52
|
Untitled
Abstract: No abstract text available
Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V653220B
32Bit
HY57V653220B
864-bit
288x32.
400mil
86pin
|
lcd hyundai
Abstract: d168 segment DIODE D180 DIODE D195 SEG55
Text: HL15604 HL15604 LCD Driver Hyundai Electronics Industries System IC Division 1 HL15604 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers 8. Key Scan Function 9. LCD Function
|
Original
|
PDF
|
HL15604
HL15604
80QFP
SEG55)
SEG56)
lcd hyundai
d168 segment
DIODE D180
DIODE D195
SEG55
|
S20 K25
Abstract: lcd hyundai s20 K30
Text: HL15703 HL15703 LCD Driver Hyundai Electronics Industries System IC Division 1 HL15703 Contents 1. General Description 2. Features 3. Block Diagram 4. Pin Diagram 5. Pin Description 6. Serial I/O Data Format 7. Registers 8. Key Scan Function 9. LCD Function
|
Original
|
PDF
|
HL15703
HL15703
80QFP
SEG56)
SEG57)
S20 K25
lcd hyundai
s20 K30
|
SERVICE MANUAL tv hyundai
Abstract: SERVICE MANUAL tv hyundai 29" 42-SDIP GMS81504 t1oi S8160 he007h
Text: HYUNDAI MicroElectronics 8-bit Microcontrollers GMS81604/08 Revision History Rev 1.2 Dec. 1998 Redraw package dimension on page 5~6. Rev 1.1 (Nov. 1998) Operating Voltage, 2.7~5.5V is extended to 2.4~5.5V. Operating Temperature, -20~80°C is extended to -20~85°C.
|
Original
|
PDF
|
GMS81604/08
6000H
S81608
SERVICE MANUAL tv hyundai
SERVICE MANUAL tv hyundai 29"
42-SDIP
GMS81504
t1oi
S8160
he007h
|
|
|
HY57V653220C
Abstract: No abstract text available
Text: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V653220C
32Bit
HY57V653220B
864-bit
288x32.
400mil
86pin
HY57V653220C
|
14 pin cmos IMAGE SENSOR
Abstract: 27h TRANSISTOR "Image Sensor" analog pixel driver cmos image sensor color sensitive PHOTO TRANSISTOR hyundai Hyundai Semiconductor HB7122B 48 pin clcc
Text: HB7122B Electronics Industries Co., Ltd. System IC Division CMOS IMAGE SENSOR With 8-bit ADC PRELIMINARY DESCRIPTION HB7122B is a highly integrated monochrome single chip CMOS image sensor using Hyundai 0.5um CMOS process developed for image application to realize high efficiency photo sensor. The sensor has 414X314
|
Original
|
PDF
|
HB7122B
HB7122B
414X314
398X302
DA41990920R
14 pin cmos IMAGE SENSOR
27h TRANSISTOR
"Image Sensor"
analog pixel driver
cmos image sensor
color sensitive PHOTO TRANSISTOR
hyundai
Hyundai Semiconductor
48 pin clcc
|
FPN 2484
Abstract: hyundai 400X300 HB7121B HB7122B hyundai 14 pin cmos IMAGE SENSOR
Text: HB7121B Electronics Industries Co., Ltd. System IC Division CMOS IMAGE SENSOR With 8-bit ADC PRELIMINARY DESCRIPTION HB7122B is a highly integrated single chip CMOS B/W image sensor using Hyundai 0.5um CMOS process developed for image application to realize high efficiency photo sensor. The sensor has 414X314 pixels total,
|
Original
|
PDF
|
HB7121B
HB7122B
414X314
400X300
DA21991011R
FPN 2484
hyundai
HB7121B
hyundai 14 pin cmos IMAGE SENSOR
|
FPN 2484
Abstract: hyundai 14 pin cmos IMAGE SENSOR hyundai FPN 82 line cmos image sensor 400X300 HV7121B Hsync Vsync analog to digital convert sensor cmos CLCC 24 pin
Text: HV7121B CMOS IMAGE SENSOR With 8-bit ADC Electronics Industries Co., Ltd. System IC Division DESCRIPTION HV7121B is a highly integrated single chip CMOS color image sensor using Hyundai 0.5um CMOS process developed for image application to realize high efficiency R/G/B photo sensor. The sensor has 414X314 pixels
|
Original
|
PDF
|
HV7121B
HV7121B
414X314
400X300
DA41990615R
FPN 2484
hyundai 14 pin cmos IMAGE SENSOR
hyundai
FPN 82
line cmos image sensor
Hsync Vsync analog to digital convert
sensor cmos CLCC 24 pin
|
P55i
Abstract: B0000h-BFFFF
Text: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and
|
OCR Scan
|
PDF
|
16Kbytes,
HY29F800
16-bit
16-bit)
P-55I,
T-55I,
R-551
P-55E,
T-55E,
P55i
B0000h-BFFFF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current
|
OCR Scan
|
PDF
|
HY29F080
S-128
HY29F080
|
Untitled
Abstract: No abstract text available
Text: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion
|
OCR Scan
|
PDF
|
HY29F400T/B
48-Pin
HY29F400
16-Bit)
G-90I
T-90I,
R-90I
G-90E,
T-90E,
R-90E
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase • - Minimizes system-level power requirements • • • Uses software commands, pinouts, and packages following industry standards for
|
OCR Scan
|
PDF
|
HY29F002
C-45I,
T-451,
R-451
P-45E,
C-45E,
T-45E,
R-45E
P-551,
C-551,
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands
|
OCR Scan
|
PDF
|
HY29F040
32-Pin
HY29F040
120ns
P-121,
T-121,
R-121
P-12E,
|
Untitled
Abstract: No abstract text available
Text: HYU NDA I HV29F08° 8 M eg ab it 1M x 8 , 5 V o lt-o n ly , Flash M em o ry KEY FEATURES 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption - 15 mA typical active read current
|
OCR Scan
|
PDF
|
HY29F080
|
