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    HY5DV651622

    Abstract: No abstract text available
    Text: Hyundai Electronics Industries 64M DDR SDRAM PRELIMINARY HYUNDAI 4 Banks X 4/2/1M X 4/8/16 bits DDR SDRAM * The contents of this document are subject to change without notice DATA SHEET HY5DV654022-75/80/10 HY5DV658022-75/80/10 HY5DV651622-75/80/10 Sep., 98


    Original     		PDF HY5DV654022-75/80/10 HY5DV658022-75/80/10 HY5DV651622-75/80/10 HY5DV654022-75/80/10, HY5DV658022-75/80/10 HY5DV651623-75/80/10 HY5DV651622

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY5DV654023, HY5DV658023, HY5DV651623 S 1M/2M/4MX16/x8/x4x4Banks DDR SDRAM DESCRIPTION HY5DV654023-8/10/12, HY5DV658023-8/10/12 and HY5DV651623-8/10/12 are high speed 3.3V I/0=2.5V) Double Data Rate(DDR) Synchronous DRAM’s fabricated with the Hyundai high performance CMOS process.


    OCR Scan     		PDF HY5DV654023, HY5DV658023, HY5DV651623 1M/2M/4MX16/x8/x4x4Banks HY5DV654023-8/10/12, HY5DV658023-8/10/12 HY5DV651623-8/10/12

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		PDF 256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN