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    SK Hynix Inc HY57V658020BTC-10PDR-A

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    HY57V658020BTC Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY57V658020BTC Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-10 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-10P Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-10S Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-10SI Hynix Semiconductor 4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz Original PDF
    HY57V658020BTC-75 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-75I Hynix Semiconductor 4Mbit x 2 bank x 8 SDRAM, LVTTL, 133MHz Original PDF
    HY57V658020BTC-7I Hynix Semiconductor 4Mbit x 2 bank x 8 SDRAM, LVTTL, 143MHz Original PDF
    HY57V658020BTC-8 Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF
    HY57V658020BTC-I Hynix Semiconductor 4 Banks x 2M x 8-Bit Synchronous DRAM Original PDF

    HY57V658020BTC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY57V658020B

    Abstract: HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. initiat00MHz 100MHz 83MHz HY57V658020BTC-75I HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin

    3clk

    Abstract: HY57V658020B HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 100MHz 83MHz HY57V658020BTC-75I 3clk HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I

    HY57V658020BTC-10S

    Abstract: HY57V658020BTC10P HY57V658020B HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC-10 HY57V658020BTC-10P HY57V658020BTC-75
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin HY57V658020BTC-10S HY57V658020BTC10P HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC-10 HY57V658020BTC-10P HY57V658020BTC-75

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    Original     		PDF HY57V658020B HY57V658020B 864-bit 152x8. 400mil 54pin

    HY57V6580208

    Abstract: 21M22 HY57V6580208TC Y57V658020BTC-7I
    Text: HY57V658020BTC-I 8Mx8-bit. 4K Ref., 4Banks, 3.3V D E S C R I PT I O N Th e H y n ix H Y 5 7 V 6 5 8 0 2 0 B is a 6 7 , 1 0 6 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , id e a l l y s u i te d f o r th e M o b i le a p p l i c a t i o n s w h ic h r e q u i r e lo w


    OCR Scan     		PDF HY57V658020BTC-I 400mil 54pin 93Bf0 64M-bit HY57V6580208 21M22 HY57V6580208TC Y57V658020BTC-7I

    Untitled

    Abstract: No abstract text available
    Text: HY57V658020BTC 8Mx8-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8.


    OCR Scan     		PDF HY57V658020BTC HY57V658020B 864-bit 152x8.

    4mx16

    Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part


    OCR Scan     		PDF HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, x16-bit, HYM41V33100BTWG HYM41V33100DTYG PC133 1Mx32, 1Mx16 4mx16 HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620

    1gb pc133 SDRAM DIMM 144pin

    Abstract: 54-PIN PC100 gm72v66841
    Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841