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    HY57V653220B Price and Stock

    SK Hynix Inc HY57V653220BTC-55DR-A

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    Bristol Electronics HY57V653220BTC-55DR-A 1,000
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    SK Hynix Inc HY57V653220BTC-55-REEL

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    Bristol Electronics HY57V653220BTC-55-REEL 1,000
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    SK Hynix Inc HY57V653220BTC55

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    Bristol Electronics HY57V653220BTC55 1,000
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    SK Hynix Inc HY57V653220BTC-55-A-REEL

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    Bristol Electronics HY57V653220BTC-55-A-REEL 1,000
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    SK Hynix Inc HY57V653220BTC-55DR

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    Bristol Electronics HY57V653220BTC-55DR 1,000
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    HY57V653220B Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V653220BTC Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V653220BTC-10 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V653220BTC-10P Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V653220BTC-5 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V653220BTC-55 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V653220BTC-6 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V653220BTC-7 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V653220BTC-8 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF

    HY57V653220B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY57V653220C

    Abstract: No abstract text available
    Text: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.


    Original     		PDF HY57V653220C 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin HY57V653220C

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.


    Original     		PDF HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin

    HY57V653220B

    Abstract: No abstract text available
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of


    Original     		PDF HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin

    HY57V653220B

    Abstract: HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-7 HY57V653220BTC-8
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.


    Original     		PDF HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-7 HY57V653220BTC-8

    HY57V653220BTC-7

    Abstract: HY57V653220B HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-8
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.


    Original     		PDF HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin HY57V653220BTC-7 HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-8

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of


    Original     		PDF HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220B 4 B a n k s x 5 1 2 K x 3 2 B it S y n c h r o n o u s D R A M DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of


    Original     		PDF HY57V653220B HY57V653220B 864-bit 288x32. HY57V653220 400mil

    HY57V653220

    Abstract: HY57V653220B hy57v653220b-a
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of


    Original     		PDF HY57V653220B 32Bit HY57V653220B 864-bit 288x32. HY57V653220 hy57v653220b-a

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hy nix H Y 5 7 V 6 5 3 2 2 0 B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.


    Original     		PDF HY57V653220B 32Bit 864-bit HY57V653220B 288x32. 15/Apr HY57V653220 400mil

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.


    Original     		PDF HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.


    Original     		PDF HY57V653220C 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.


    Original     		PDF HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 11/Dec 400mil

    k4s643232f

    Abstract: KS RMII Reduced MII aa2c "routing tables"
    Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks


    Original     		PDF TXC-05870 TXC-05870-MB, TXC-05870 k4s643232f KS RMII Reduced MII aa2c "routing tables"

    TCXO A31 10MHZ

    Abstract: MT48LC4M32B2TG-6 L1V16 Datum OCXO
    Text: PRELIMINARY PRODUCT BRIEF: SUBJECT TO CHANGE Rev: 091407 DS34S108, DS34S104, DS34S102, DS34S101 Description Abridged General Description Features The IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC draft-compliant DS34S108 allows up to eight T1/E1 links or frame-based serial HDLC links to be


    Original     		PDF DS34S108, DS34S104, DS34S102, DS34S101 DS34S108 823/G board25 DS34S108 TCXO A31 10MHZ MT48LC4M32B2TG-6 L1V16 Datum OCXO

    Untitled

    Abstract: No abstract text available
    Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34S101, DS34S102, DS34S104, DS34S108 823/G DS34S10x DS34S101 DS34S102

    TXC-06010-MB

    Abstract: TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk
    Text:  PacketTrunk-4 Plus Device TDMoIP/MPLS Gateway Device TXC-06010 DATA SHEET PRODUCT PREVIEW TXC-06010-MB, Ed. 2 June 2006 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII; HDX or


    Original     		PDF TXC-06010 TXC-06010-MB, TXC-06010-MB TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk

    Untitled

    Abstract: No abstract text available
    Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34S101, DS34S102, DS34S104, DS34S108 DS34S101 DS34S102

    Untitled

    Abstract: No abstract text available
    Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3/STS-1 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks


    Original     		PDF TXC-05870 TXC-05870-MB,

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    TL201212-4R7K

    Abstract: pr4401 l0806 2N3904 A45 VRA6 C1152 VCC317 prestonia GEVENT12 quanta
    Text: A B C D E 4 4 X-BUS FLASH USB Prestonia Prestonia CPU CPU BMC CPU BUS SP SIO 417 PP LPC BUS MEMORY I/F CSB5 3 CMIC_SL Thin IMB FLPY 3 IMB IDE PCI Slot 33MHz/32bit 4 DIMMs PCI BUS 0 BCM5702 Gigabit Ethernet RAGE XL Secondary 2 PCI BUS 1 PCI X Slot 100MHz/64bit


    Original     		PDF 33MHz/32bit BCM5702 100MHz/64bit 66MHz/64bit VpCC12 VCC12 -VCC12 LSI1020 TL201212-4R7K pr4401 l0806 2N3904 A45 VRA6 C1152 VCC317 prestonia GEVENT12 quanta

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220BTC-I 2Mx32-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION Th e Hy n i x H Y 5 7 V 6 5 3 2 2 0 B is a 67, 1 0 8 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , i de a l l y s ui t ed f or t he which r e q u i re l ow p o w e r c o n s u m p t i o n and e x t e n d e d t e m p e r a t u r e r an g e . H Y 5 7 V 6 5 3 2 2 0 B


    OCR Scan     		PDF HY57V653220BTC-I 2Mx32-bit, 288x32. 86pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V653220BTC 2Mx32-bit, 4K Ret, 4Banks, 3.3V DESCRIPTION T h e Hy n i x H Y 5 7 V 6 5 3 2 2 0 B i s a 6 7 , 1 0 8 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e m e m o r y a p p l i c a t i o n s w h i c h r e q u i r e w i d e d a t a I / O a n d h i gh b a n d w i d t h . H Y 5 7 V 6 5 3 2 2 0 B is o r g a n i z e d as 4 b a n k s of 5 2 4 , 2 8 8 x 3 2 .


    OCR Scan     		PDF HY57V653220BTC 2Mx32-bit, HY57V653220B

    4mx16

    Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part


    OCR Scan     		PDF HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, x16-bit, HYM41V33100BTWG HYM41V33100DTYG PC133 1Mx32, 1Mx16 4mx16 HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620

    1gb pc133 SDRAM DIMM 144pin

    Abstract: 54-PIN PC100 gm72v66841
    Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841