Untitled
Abstract: No abstract text available
Text: HY57V56820AT 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56820A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820A is organized as 4banks of 8,388,608x8.
|
Original
|
PDF
|
HY57V56820AT
HY57V56820A
456bit
608x8.
400mil
54pin
|
Untitled
Abstract: No abstract text available
Text: HY57V56820A L T 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820A is organized as 4banks of 8,388,608x8.
|
Original
|
PDF
|
HY57V56820A
456bit
608x8.
400mil
54pin
|
Untitled
Abstract: No abstract text available
Text: HY57V56820A 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56820A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820A is organized as 4banks of 8,388,608x8.
|
Original
|
PDF
|
HY57V56820A
HY57V56820A
456bit
608x8.
400mil
54pin
|
ka 2843
Abstract: No abstract text available
Text: HY57V56820A L T 32Mx6-bit, 8 K R et, 4Banks, 3.3V DESCRIPTION The HY57V56820A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820A is organized as 4banks of 8,388,608x8.
|
OCR Scan
|
PDF
|
HY57V56820A
32Mx6-bit,
456bit
608x8.
54pin
262i0
ka 2843
|
PC100
Abstract: PC133 54-PIN HYM71V653201
Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH
|
OCR Scan
|
PDF
|
200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
PC100
54-PIN
HYM71V653201
|