HY57V41610
Abstract: No abstract text available
Text: HY57V41610 2 Banks x 128K x 16 Bit Synchronous DRAM DESCRIPTION PRELIMINARY The Hyundai HY57V41610 is a 4,194,304 bits CMOS Synchronous DRAM. HY57V41610 is organized as 2 banks of 131,072x16. HY57V41610 is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are
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HY57V41610
HY57V41610
072x16.
1SD10-03-FEB98.
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HY57V16161
Abstract: hy57v168010b 1MX16BIT 4MX16
Text: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram
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HY57V41610TC---------------------
256Kx16-bit,
16M-bit
HY57V16401O
--------HY57V168010BTC-------------------
-------------------------------HY57V16161
-------------------1Mx16-bit,
64M-bit
HY5DV654023TC--------------------
HY57V16161
hy57v168010b
1MX16BIT
4MX16
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ZJ 37
Abstract: T22J
Text: « « Y U H P IU > — -• HY57V41610 2 Banks x 128K x 16 Bit Synchronous DRAM DESCRIPTION PRELIMINARY The Hyundai HY57V41610 is a 4,194,304 bits CMOS Synchronous DRAM. HY57V41610 is organized as 2 banks of 131,072x16. HY57V41610 is offering fully synchronous operation referenced to a positive edge dock. All Inputs and outputs are
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HY57V41610
HY57V41610
072x16.
ZJ 37
T22J
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hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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