4MX16
Abstract: No abstract text available
Text: HY51V64160,HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64160
HY51V65160
4Mx16,
16-bit
4Mx16
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HY51V64160A
Abstract: No abstract text available
Text: HY51V64160A,HY51V65160A 4Mx16, Fast Page mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64160A
HY51V65160A
4Mx16,
16-bit
4Mx16
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Untitled
Abstract: No abstract text available
Text: HY51V64160A,HY51V65160A 4Mx16, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64160A
HY51V65160A
4Mx16,
16-bit
4Mx16
12/Sep
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16mx4
Abstract: HY51V64400A
Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64400A
HY51V65400A
16Mx4,
128ms
cycle/64ms)
16Mx4
10/Sep
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Untitled
Abstract: No abstract text available
Text: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64800A
HY51V65800A
128ms
cycle/64ms)
12/Sep
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HY51V64400A
Abstract: No abstract text available
Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64400A
HY51V65400A
16Mx4,
128ms
cycle/64ms)
16Mx4
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Untitled
Abstract: No abstract text available
Text: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64800A
HY51V65800A
128ms
cycle/64ms)
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4MXW
Abstract: No abstract text available
Text: C HHYum m i * HY51V64160A,HY51V65160A 4MxW , Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64160A
HY51V65160A
16-bit
4MXW
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V64160, HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow
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HY51V64160,
HY51V65160
4Mx16,
16-bit
0-A12)
4Mx16
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S5400A
Abstract: RO3035
Text: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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V64400A
V65400A
16Mx4,
128ms
cycle/64ms)
S5400A
RO3035
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1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
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256Kx4-bit,
1MX16BIT
16MX1
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HY5116400BT
Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC
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256KX4)
HY531000AJ
HY531000ALJ
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
HY512260SLJC
HY512264JC
HY512264LJC
HY5116400BT
HY5117400CJ
50-PIN
HY5117804BT
TSOP-II 44
26-PIN
HY5118160BJ
hy51v65804
HY5117400BJ
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Untitled
Abstract: No abstract text available
Text: - H Y U N D A I « HY51V64160.HY51 V65160 4Ux16, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64160
V65160
4Ux16,
16-bit
A0-A12)
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY51V64160,HY51 V65160 4M x 16-bit CMOS DRAM with Fast Page Mode PRELIM IN A R Y DESCRIPTION ORDERING INFORMATION This fam ily is a 64M bit d ynam ic RAM organized 4,194,304 x16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed
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HY51V64160
V65160
16-bit
HY51V64160TC
HY51V64160LTC
HY51V64160SLTC
HY51V65160TC
HY51V65160LTC
HY51V65160SLTC
x16-bit
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
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