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    HY51C464 Search Results

    HY51C464 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY51C464-12 Hyundai 65,536 x 4-Bit CMOS Dynamic RAM Original PDF
    HY51C464-15 Hyundai 65,536 x 4-Bit CMOS Dynamic RAM Original PDF
    HY51C464-20 Hyundai 65,536 x 4-Bit CMOS Dynamic RAM Original PDF

    HY51C464 Datasheets Context Search

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    hyundai

    Abstract: 536X4
    Text: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­


    OCR Scan     		PDF 536x4-Bit HY51C464 HY51C464 K29793/4 K23955/7 hyundai 536X4

    HYUNDAI i10

    Abstract: No abstract text available
    Text: PRELIMINARY HY51C464 HYUNDAI SEMICONDUCTOR 6 5 ,5 3 6 x4-Bit CMOS D ynam ic RAM AUGUST 1986 Oov,cd- The HY51C464 offers a m axim um standby current of 100 ft A w hen RAS ? Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­


    OCR Scan     		PDF HY51C464 536x4-Bit HY51C464 K29793/4 K23955/7 DS11-08/86 HYUNDAI i10