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    HY514400ALT Search Results

    HY514400ALT Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY514400ALT Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400ALT50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALT60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALT70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF

    HY514400ALT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY514400A

    Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT
    Text: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    Original     		PDF HY514400A /RAS-on28ms 10/Jan HY514400A HY514400AJ HY514400ALJ HY514400ALT HY514400AT

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI HYC532200 Series 2Mx32 DRAM CARD DESCRIPTION The HYC532200 is the DRAM memory card consisting of sixteen HY514400ALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in memory in the portable


    OCR Scan     		PDF HYC532200 2Mx32 HY514400ALT x32/16 1MC02-02-FEB95 000400b HYC532200-Series HYC532200

    PH44

    Abstract: jeida 88 pin jeida dram 88 pin
    Text: •HYUNDAI HYC532200 Series 2Mx32 DRAM CARD DESCRIPTION TTie HYC532200 is the DRAM memory card consisting of sixteen HY514400ALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in memory in the portable


    OCR Scan     		PDF HYC532200 2Mx32 HY514400ALT x32/16 1MC02-02-FEB95 HYC532200-Series 14PV-01 1MC02-02-FEB9S PH44 jeida 88 pin jeida dram 88 pin

    Untitled

    Abstract: No abstract text available
    Text: HYC532100 Series »HYUNDAI 1Mx32 DRAM CARD DESCRIPTION The HYC532100 is the DRAM memory card consisting of eight HY514400ALT built in the metal plate housing. The Hyundai DRAM card is optimized for the applications such as buffering, main and add-in memory in the portable


    OCR Scan     		PDF HYC532100 1Mx32 HY514400ALT x32/16 4b750flfl 1MC01-02-FEB95 0D03c HYC532100-Series

    HYC532100

    Abstract: jeida dram 88 pin
    Text: “H Y U N D A I HYC532100 Series 1Mx32 DRAM CARD DESCRIPTION The HYC532100 is the DRAM memory card consisting of eight HY514400ALTbuilt in the metal plate housing. The Hyundai DRAM card is optimized for the applications such as buffering, main and add-in memory in the portable


    OCR Scan     		PDF HYC532100 1Mx32 HY514400ALTbuilt x32/16 1MC01-02-FEB95 HYC5321 -80PIN jeida dram 88 pin

    mr 6710

    Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421
    Text: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A HY51440GA 014Q3 1AC07-30-MAY95 4L750Ã HY514400AJ HY514400ALJ mr 6710 HY514400ALR HY514400ALT F 421

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 4 4 0 0 A Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A HY514400A 047fl 4L750Ã 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT

    512kx4

    Abstract: 7150M
    Text: HY514400A Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4-bit configuration with CM O S DRAMs. T he circuit and process design allow th is d e vice to achieve high perform ance and low power dissipation.


    OCR Scan     		PDF HY514400A HY514400AJ HY514400ALJ Y514400AT HY514400ALT HY514400AR Y514400ALR 50/60/70only. 128ms 512kx4 7150M

    Untitled

    Abstract: No abstract text available
    Text: «MYU1IDAI • HY514400A 1Mx4, Fast Page mode DESCRIPTION This fam ily is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    OCR Scan     		PDF HY514400A 128ms 15-These

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 4 4 0 0 A • H Y U N D A I S e r ie s 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400A 1AC07-30-MAY94 Q24fll HY514400AJ HY514400AU HY514400AT HY514400ALT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY514400A Series SEMICONDUCTOR 1Mx4-blt CMOS DRAM DESCRIPTION The HY514400A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400A 1AC07-20-APR93 HY514400AJ HY514400ALJ HY514400AT HY514400ALT

    Untitled

    Abstract: No abstract text available
    Text: “ H YU N D A I HY514400A Series SEMICONDUCTOR 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400A 1AC07-20-APR93 00014S7 11nni7/( HY514400AJ HY514400AU

    10EZ15

    Abstract: 85550 HY514400A HY514400ALJ HY514400ALR HY514400ALT WH33 D03n c 7150M
    Text: •HYUNDAI H Y 5 1 4 4 0 0 A S e r i e s 1 M x 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A 1AC07-30-MAY95 4L750Ã DDD4171 HY514400AJ HY514400ALJ 10EZ15 85550 HY514400ALR HY514400ALT WH33 D03n c 7150M

    hy57v168010

    Abstract: HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT
    Text: Sync. DRAM MODULE As of '96.3Q TYPE SIZE SPEED REF. 168 Pin 8MB M X 64 Sync. HYM7V64100TR 10/12/15 4K HY57V161610 x4 DIMM 16MB 2M X64 Sync. HYM7V64200TR 10/12/15 4K HY57V161610X8 HYM7V64200TF 10/12/15 4K HY57V168010x8 DESCRIPTION. PART NO. Unbuffered 32MB


    OCR Scan     		PDF HYM7V64100TR HYM7V64200TR HYM7V64200TF HYM7V72A200TF HYM7V64400TK HYM7V64400TF HY57V161610 HY57V161610X8 HY57V168010x8 HY57V168010 HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ

    Ck37

    Abstract: No abstract text available
    Text: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A families075 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT 4400ALT Ck37