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    HY514400ALJ Search Results

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    HY514400ALJ Price and Stock

    SK Hynix Inc HY514400ALJ-60

    Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY514400ALJ-60 330
    • 1 $8.82
    • 10 $8.82
    • 100 $3.822
    • 1000 $3.528
    • 10000 $3.528
    Buy Now
    HY514400ALJ-60 30
    • 1 $8.82
    • 10 $4.41
    • 100 $4.41
    • 1000 $4.41
    • 10000 $4.41
    Buy Now

    HY514400ALJ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY514400ALJ Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400ALJ50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALJ60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALJ70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF

    HY514400ALJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY514400A

    Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT
    Text: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    Original
    PDF HY514400A /RAS-on28ms 10/Jan HY514400A HY514400AJ HY514400ALJ HY514400ALT HY514400AT

    mr 6710

    Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421
    Text: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide


    OCR Scan
    PDF HY514400A HY51440GA 014Q3 1AC07-30-MAY95 4L750Ã HY514400AJ HY514400ALJ mr 6710 HY514400ALR HY514400ALT F 421

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 4 4 0 0 A Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan
    PDF HY514400A HY514400A 047fl 4L750Ã 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT

    512kx4

    Abstract: 7150M
    Text: HY514400A Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4-bit configuration with CM O S DRAMs. T he circuit and process design allow th is d e vice to achieve high perform ance and low power dissipation.


    OCR Scan
    PDF HY514400A HY514400AJ HY514400ALJ Y514400AT HY514400ALT HY514400AR Y514400ALR 50/60/70only. 128ms 512kx4 7150M

    Untitled

    Abstract: No abstract text available
    Text: «MYU1IDAI • HY514400A 1Mx4, Fast Page mode DESCRIPTION This fam ily is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    OCR Scan
    PDF HY514400A 128ms 15-These

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan
    PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan
    PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY514400A Series SEMICONDUCTOR 1Mx4-blt CMOS DRAM DESCRIPTION The HY514400A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan
    PDF HY514400A 1AC07-20-APR93 HY514400AJ HY514400ALJ HY514400AT HY514400ALT

    Untitled

    Abstract: No abstract text available
    Text: “ H YU N D A I HY514400A Series SEMICONDUCTOR 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan
    PDF HY514400A 1AC07-20-APR93 00014S7 11nni7/( HY514400AJ HY514400AU

    10EZ15

    Abstract: 85550 HY514400A HY514400ALJ HY514400ALR HY514400ALT WH33 D03n c 7150M
    Text: •HYUNDAI H Y 5 1 4 4 0 0 A S e r i e s 1 M x 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan
    PDF HY514400A 1AC07-30-MAY95 4L750Ã DDD4171 HY514400AJ HY514400ALJ 10EZ15 85550 HY514400ALR HY514400ALT WH33 D03n c 7150M

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan
    PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ

    Ck37

    Abstract: No abstract text available
    Text: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan
    PDF HY514400A families075 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT 4400ALT Ck37