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    HY512264 Price and Stock

    SK Hynix Inc HY512264JC-60

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    HY512264 Datasheets Context Search

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    hy512264

    Abstract: HY512264JC HY512264TC
    Text: HY512264 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. In dependant read and write of upper and


    Original     		PDF HY512264 128Kx16, 16-bit 16-bits 128Kx16 hy512264 HY512264JC HY512264TC

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    hy512264

    Abstract: hy512260 8 bit dRAM Controller
    Text: HY512260 128Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and


    Original     		PDF HY512260 128Kx16, 16-bit 16-bits 128Kx16 hy512264 hy512260 8 bit dRAM Controller

    HY512264

    Abstract: HY512264TC
    Text: “H Y U N D A I HY512264 Series _128K x 16-bit CMOS DRAM with 2/CAS, Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION The H Y 5 12264 Series is a high perform ance CM O S fast dynam ic RAM organized 131,072x16 -b it config-uration. Independent read and w rite o f upper and


    OCR Scan     		PDF HY512264 072x16 40pin 40/44pin HY512264JC HY512264LJC HY512264SLJC HY512264TC

    HY512264

    Abstract: HY512264JC HY512264TC HY512264 tc
    Text: »HYUNDAI HY512264 Series 128Kx 16-bit CMOS DRAM with 2CAS, Extended Data Out PRELIMINARY DESCRIPTION The H Y 512264 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY512264 128Kx 16-bit 400mil 40pin 40/44pin 033jC 1AB10-00-MAY95 HY512264JC HY512264TC HY512264 tc

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    HY512264

    Abstract: HY512264jc
    Text: “H YU N D A I H Y 5 1 2 2 6 4 S e r ie s 128Kx 16-bit CMOS DRAM with 2CAS, Extended Data Out PRELIMINARY DESCRIPTION The HY512264 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF 128Kx 16-bit HY512264 400mil 40pin 40/44pin 75Dfià 1AB10-00-MA HY512264jc

    HY512264TC

    Abstract: No abstract text available
    Text: H Y U N D A I -« HY512264 > 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. In dependant read and write of upper and


    OCR Scan     		PDF HY512264 128Kx16, 16-bit 16-bits HY512264TC

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ

    marking q815

    Abstract: No abstract text available
    Text: H Y U N D A I - « H Y 512260 128Kx16. CMOS DRAM wlth/2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and


    OCR Scan     		PDF 128Kx16. 16-bit 16-bits marking q815

    HY512264

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 2 2 6 4 128Kx16, E xten ded Data O ut m ode DESCRIPTION T his fam ily is a 4M bit d yn am ic RAM o rg an ized 131,072 x 16-bit con figu ration w ith C M O S DR AM s. T he circu it and process de sig n allow this d e vice to achieve high p e rfo rm an ce and low po w e r dissipa tion . In de pe n d a n t read and w rite of up p e r and


    OCR Scan     		PDF HY512264 128Kx16, 16-bit 16-bits DQ0-DQ15) 128Kx16

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


    OCR Scan     		PDF HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260