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    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51161 HY5116100Ato 9-10-MAY94 HY5116100A HY5116100AJ HY5116100ASU HY5116100AT HY51161OOASLT HY5116100AR

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 6 1 0 0 A S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100Ais HY5116100A HY5116100Ato 1AD19 HY5116100AJ HY5116100ASU HY5116100AT HY5116100ASLT HY5116100AR

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J