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    4N65F

    Abstract: 4n65
    Text: HY4N65T / HY4N65FT 650V / 4A N-Channel Enhancement Mode MOSFET 650V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current


    Original
    PDF HY4N65T HY4N65FT O-220AB ITO-220AB 2002/95/EC O-220AB ITO-220AB MIL-STD-750 HY4N65T 4N65T 4N65F 4n65