DQ4-21
Abstract: No abstract text available
Text: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process
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1x10s
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DQ4-21
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Untitled
Abstract: No abstract text available
Text: /V' HONEYùJELL/ S S E C 3ÔE D M551Ô75 0Q00S54 M I HÔN3 Military Products Advance Information HX6364 8K x 8 RADIATION-HARDENED STATIC RAM - SOI FEATURES RADIATIO N OTHER • Fabricated with RICMOS Silicon on Insulator SOI 1.2 ¡am Process • Access Tim e < 45 nsec (-55 to 125°C)
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0Q00S54
1x107
1x101
10upsets/cell-day
1x1013rad
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Untitled
Abstract: No abstract text available
Text: Honeywell Military Products Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 nm Process Total Dose Hardness through 1x106 rad(Si02) • Full military temperature operation (-55°C to 125°C)
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1x106
1x101'
10upsets/bit-day
HX6364
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